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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFSL4310

Name: AUIRFSL4310
Brand: Infineon Technologies
SKU: AUIRFSL4310
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFSL4310

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: AUIRFSL4310.pdf

Description:: MOSFET N-CH 100V 75A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRFSL4310 from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 package, rated for 100 V V_BRDSS, 5.6 mΩ typ. R_DS(on) at V_GS = 10 V and I_D = 75 A, with 175°C maximum junction temperature and repetitive avalanche capability up to T_jmax. It serves as a high-efficiency main switch in 12 V/24 V automotive powertrain and body electronics.

For engineers reviewing the AUIRFSL4310 datasheet, AUIRFSL4310 pinout, AUIRFSL4310 application, or AUIRFSL4310 equivalent, key selection criteria include its silicon-limited 130 A continuous drain current (at T_C = 25°C), 0.50 °C/W R_θJC, fast switching (t_r = 110 ns, t_f = 78 ns), and qualified compliance with AEC-Q101 standards for under-hood use.

Technical Context

This MOSFET employs advanced planar silicon process technology optimized for low conduction loss and robust unclamped inductive switching. Its gate threshold voltage (V_GS(th)) ranges 2.0–4.0 V at 250 µA, enabling reliable drive from standard 3.3 V or 5 V logic controllers when used with appropriate gate drivers.

The device integrates a fast, low-loss body diode with t_rr = 45–68 ns (T_J = 25°C) and Q_rr = 82–120 nC, supporting synchronous rectification and freewheeling in high-frequency DC-DC converters and motor control H-bridges where diode recovery behavior directly impacts EMI and efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	100 V - Withstands up to 100 V drain-source blocking voltage before avalanche onset; suitable for 24 V nominal automotive systems with load-dump transients.
R_DS(on) typ.	5.6 mΩ at V_GS = 10 V, I_D = 75 A - Enables <1 W conduction loss at 75 A, critical for thermal management in compact engine control modules.
I_D (Package Limited)	75 A at T_C = 25°C - Thermal limit defined by TO-262 package construction; requires heatsinking for sustained operation above 50 A.
E_AS	980 mJ single-pulse avalanche energy - Supports robust unclamped inductive switching in solenoid drivers without external snubbers.
t_r/t_f	110 ns / 78 ns - Fast edge rates reduce switching losses in 100–500 kHz DC-DC stages and enable precise PWM timing in BLDC gate drives.
T_J max	+175°C - Qualified for under-hood applications including transmission control units and battery disconnect switches exposed to ambient >125°C.
Q_g	170–250 nC - Gate charge level dictates driver strength requirement; compatible with common automotive gate drivers (e.g., IR21xx, UCC27531).

Pinout & Package

Supplied in TO-262 (Straight Lead Version of D2PAK), featuring isolated metal tab for direct heatsink mounting. Case-to-drain isolation enables simplified thermal design in high-side configurations.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path collector	Internally connected to metal tab; must be electrically isolated from heatsink unless system-level grounding permits.
Source (S)	Current return node	Low-inductance connection point for sense resistor placement and gate driver reference; ties to power ground plane.
Gate (G)	Control terminal	High-impedance input requiring <250 nC total charge; sensitive to ESD and ringing-requires local RC snubber and Kelvin source routing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	5.6 mΩ typ. reduces I²R losses by >30% vs. legacy 8 mΩ automotive MOSFETs at same die size, lowering thermal stress in space-constrained ECUs.
175°C operating temperature	Enables deployment in high-ambient zones (e.g., near exhaust manifolds or inverters) without derating beyond datasheet SOA curves.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_jmax, eliminating need for external clamping diodes in starter relay and fuel injector drivers.
AEC-Q101 qualified	Passed stress tests including HTGB, HTRB, and temperature cycling per automotive reliability standard-no additional qualification required for Tier 1 BOMs.

Applications

Engine Control Unit (ECU) Injector Driver

Automotive DC-DC Converter

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 15 A and 10 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main power switch controlling coil energization/de-energization; body diode provides freewheel path during turn-off.

Use Value: Low Q_gd (62 nC) and fast t_f (78 ns) minimize dead-time distortion and improve injection timing accuracy within ±10 µs.

Use Scenario: Synchronous rectifier in 48 V-to-12 V bidirectional buck-boost converter for 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; body diode reverse recovery managed via controlled dv/dt (14 V/ns).

Use Value: 1.3 V V_SD at 75 A and 45 ns t_rr cut conduction losses by 40% vs. discrete diode solution, improving full-load efficiency to >95%.

Transmission Control Module (TCM) Solenoid Driver

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Driving 24 V linear solenoids with inductive loads up to 1.5 H and 8 A steady-state current in automatic transmission valve bodies.

IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy via controlled avalanche; gate drive synchronized to PWM-controlled current ramp.

Use Value: 980 mJ E_AS allows safe energy absorption without snubber components, reducing PCB area by 35% and eliminating snubber capacitor failure modes.

Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverter, switching at 20 kHz with peak phase current 120 A.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch handling both motoring and regenerative braking current paths.

Use Value: 0.50 °C/W R_θJC enables direct mounting to aluminum heatsink, maintaining T_j < 150°C at 120 A peak with 20°C/W system thermal resistance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 2.2 mΩ typ. R_DS(on), TO-220FP package, 175°C rated, but lower E_AS (420 mJ)	Lacks repetitive avalanche rating; requires external TVS/clamp for inductive loads	Select when ultra-low R_DS(on) dominates and inductive energy is limited or externally clamped.
IXFH120N10L2	100 V, 5.8 mΩ typ. R_DS(on), TO-247 package, 175°C, E_AS = 1100 mJ, but not AEC-Q101 qualified	Not automotive-qualified; requires full requalification for OEM use	Choose only for industrial prototypes or non-safety-critical aftermarket systems where qualification overhead is prohibitive.

Compared with STL220N10F7 and IXFH120N10L2, AUIRFSL4310 uniquely balances automotive qualification, robust avalanche capability, and TO-262 thermal performance-making it the default choice for production ECU, TCM, and EPS designs where reliability and qualification traceability are mandatory.

Availability

AUIRFSL4310 is available at Aetrix Electronics and suitable for automotive powertrain control, body electronics, and 48 V mild hybrid subsystems requiring stable component supply across multi-year vehicle production cycles.

Supply support for AUIRFSL4310 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors for automotive, industrial, and renewable energy markets.

AUIRFSL4310 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, transmission, and chassis control systems.

FAQ

Is AUIRFSL4310 pin-compatible with AUIRFS4310?

Yes-both share identical TO-262 pinout (Drain-Source-Gate) and electrical specifications. The AUIRFSL4310 is the straight-lead variant of the AUIRFS4310 (D2PAK), differing only in lead form for through-hole assembly versus surface-mount. Mechanical footprint and thermal interface remain functionally equivalent.

What is the maximum recommended gate drive voltage for AUIRFSL4310?

The absolute maximum V_GS is ±20 V, but Infineon specifies optimal operation at 10 V for full R_DS(on) saturation. Driving above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and risk of transient overvoltage damage during switching events.

Does AUIRFSL4310 require a gate resistor for automotive applications?

Yes-a series gate resistor (typically 5–25 Ω) is mandatory to dampen gate ringing caused by PCB trace inductance and driver output impedance. Without it, overshoot exceeding ±20 V can cause premature gate oxide failure, especially in noisy 12 V vehicle electrical environments.

Can AUIRFSL4310 replace older IRF3205 in automotive designs?

No-while both are N-channel MOSFETs, IRF3205 is not AEC-Q101 qualified, has higher R_DS(on) (8 mΩ), lower T_jmax (+175°C vs. +175°C but unqualified), and lacks validated repetitive avalanche performance. AUIRFSL4310 meets modern automotive functional safety and longevity requirements that IRF3205 does not satisfy.

AUIRFSL4310 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 7mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 250 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 7670 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

AUIRFSL4310 FAQ

1.How can I place an order for AUIRFSL4310 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFSL4310 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFSL4310 reliable?

The price and inventory of AUIRFSL4310 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFSL4310 is usually 5 days.

3.What payment methods are accepted for AUIRFSL4310?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFSL4310 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFSL4310?

AUIRFSL4310 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFSL4310 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFSL4310?

For technical support, including AUIRFSL4310 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFSL4310 requirements.

6.How does Aetrix verify that AUIRFSL4310 is sourced from the original manufacturer or authorized distributors?

All AUIRFSL4310 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFSL4310 meets industry standards.

7.What is the process for return or replacement of AUIRFSL4310?

All AUIRFSL4310 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFSL4310, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFSL4310 part is unused and in its original packaging.

Return procedure for AUIRFSL4310:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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