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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFSL8409

Name: AUIRFSL8409
Brand: Infineon Technologies
SKU: AUIRFSL8409
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFSL8409

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Short Leads, I2PAK

Datasheet:: AUIRFSL8409.pdf

Description:: MOSFET N-CH 40V 195A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:4,342

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Product details

Overview

AUIRFSL8409 from Infineon Technologies is an automotive-grade N-channel HEXFET® Power MOSFET in TO-262 package, rated for 40 V V_DS, 1.2 mΩ max R_DS(on) at 10 V V_GS, 195 A package-limited continuous drain current, and 175°C junction temperature - deployed in electric power steering (EPS) and battery switch control.

For engineers reviewing the AUIRFSL8409 datasheet, AUIRFSL8409 pinout, AUIRFSL8409 application, or AUIRFSL8409 equivalent, this page delivers verified thermal performance, avalanche energy rating (760 mJ), gate charge (300–450 nC), body diode recovery (Q_rr = 97 nC), and TO-262 mechanical mounting specifications for high-current automotive power switching design.

Technical Context

This device uses advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining robust unclamped inductive switching capability. Its 175°C T_J rating enables operation in under-hood environments without derating, and its 1.2 mΩ R_DS(on) supports <1.5 W conduction loss at 100 A.

The integrated body diode exhibits 0.86 V typical forward voltage and 52 ns reverse recovery time at 100 A/125°C, with dv/dt immunity up to 2.7 V/ns. Repetitive avalanche is validated up to T_Jmax with E_AR = 375 mJ at 100 A and pulse width ≤ 400 µs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery systems with margin for load dump transients.
R_DS(on) max	1.2 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 100 A, reducing heatsink requirements in EPS motor drivers.
I_D (package)	195 A @ T_C = 25°C - Package-limited current defined by leadframe thermal and bond-wire limits, not silicon saturation.
E_AS	760 mJ - Single-pulse avalanche energy rating ensures survivability during unclamped inductive turn-off in motor control.
Q_g	300–450 nC - Total gate charge determines driver strength requirement; 450 nC worst-case sets minimum 2 A peak gate drive for 100 ns switching.
T_J max	175°C - Junction temperature limit enabling direct integration into high-ambient automotive modules without active cooling.
C_{oss eff} (ER)	2605 pF - Energy-related output capacitance used to calculate turn-off losses in hard-switched DC-DC converters.

Pinout & Package

TO-262 package: 3-pin straight-lead variant of TO-220AB with isolated flange, optimized for surface-mount heat sinking via screw or clip. Flange is electrically connected to drain (D).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Source (S)	Main current return path; low-inductance connection critical for minimizing shoot-through risk in half-bridge configurations.
Pin 2 (Flange)	Drain (D)	Electrically tied to metal flange; primary thermal path to heatsink and main high-side switching node.
Pin 3 (Lead)	Gate (G)	High-impedance control input; requires <2.1 Ω internal gate resistance limiting dV/dt-induced false turn-on.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.2 mΩ max enables >98% efficiency in 40 V, 100 A battery disconnect switches with minimal thermal footprint.
175°C T_J rating	Eliminates need for external temperature derating in engine bay applications where ambient exceeds 125°C.
Repetitive avalanche capability	Validated up to 375 mJ at 100 A, supporting reliable operation in unclamped inductive loads like solenoid drivers.
Fast body diode recovery	52 ns t_rr and 97 nC Q_rr reduce cross-conduction losses in synchronous rectification and bidirectional DC-DC stages.
Automotive qualification	AEC-Q101 qualified with zero defects across HTOL, TC, HAST, and UHAST stress tests per Infineon's automotive reliability program.

Applications

Electric Power Steering (EPS)

Battery Disconnect Switch

Use Scenario: High-current motor phase switching in column-assist or rack-assist EPS modules exposed to under-hood temperatures up to 150°C ambient.

IC Role / Device Role / Timing Role: Main N-channel high-side switch in three-phase inverter bridge, operating at 10–20 kHz PWM with fast turn-on/off timing.

Use Value: 1.2 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 1.85 mΩ devices, lowering module temperature rise by 12°C at full assist torque.

Use Scenario: Isolation of 12 V starter battery from auxiliary loads during engine cranking to prevent voltage sag below 7.5 V.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical contactors, controlled via MCU GPIO with active short-circuit protection.

Use Value: 195 A package rating supports cold-cranking surge currents without contact welding, while 760 mJ E_AS prevents failure during accidental short-circuit events.

Start-Stop Micro-Hybrid System

48 V–12 V Bidirectional DC-DC Converter

Use Scenario: Controlling regenerative braking energy flow from 48 V Li-ion storage to 12 V vehicle network during deceleration.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck-boost stage, conducting bidirectional current with body diode forward conduction during light-load modes.

Use Value: 0.86 V V_SD and 52 ns t_rr cut reverse recovery losses by 42% versus standard MOSFETs, improving light-load efficiency above 92%.

Use Scenario: High-efficiency power conversion between 48 V mild-hybrid bus and legacy 12 V system in premium vehicles.

IC Role / Device Role / Timing Role: Primary switch in interleaved dual-phase buck converter, switching at 200 kHz with ZVS-assisted turn-on.

Use Value: 2605 pF C_{oss eff}(ER) enables predictable turn-off loss calculation, allowing accurate thermal modeling for 5 kW continuous output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 0.95 mΩ typ R_DS(on), TO-263 package, 220 A I_D, no specified repetitive avalanche rating	Lacks documented E_AR validation; unsuitable for unclamped inductive switching without external snubbing	Select only when avalanche stress is absent and lower R_DS(on) justifies higher cost and larger footprint.
IRFB4115PBF	150 V, 4.5 mΩ R_DS(on), TO-220AB, 75 A I_D, 175°C T_J, 1200 mJ E_AS	Higher voltage rating increases gate drive energy and switching losses in 40 V systems; lower current density reduces thermal margin	Prefer only if system requires 150 V transient tolerance or legacy board compatibility with TO-220AB mounting.

Compared with STL220N4F7AG and IRFB4115PBF, AUIRFSL8409 uniquely balances ultra-low on-resistance, validated repetitive avalanche, and TO-262 thermal interface - making it optimal for space-constrained, high-reliability automotive power switches where both conduction loss and fault survival are critical.

Availability

AUIRFSL8409 is available at Aetrix Electronics and suitable for electric power steering (EPS), battery disconnect switching, and start-stop micro-hybrid systems requiring stable component supply across extended automotive production lifecycles.

Supply support for AUIRFSL8409 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of automotive MOSFET leadership.

The AUIRFSL8409 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-current, high-temperature power switching in safety-critical vehicle subsystems.

FAQ

What is the maximum continuous drain current for AUIRFSL8409 at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 152 A, derived from thermal derating of the 195 A package-limited rating using the 2.5 W/°C linear derating factor and R_θJC = 0.40 °C/W. This value assumes proper heatsinking and is confirmed in Figure 9 of the official datasheet.

Is AUIRFSL8409 suitable for synchronous rectification in a 48 V–12 V DC-DC converter?

Yes - its 0.86 V typical body diode forward voltage, 52 ns reverse recovery time, and 97 nC Q_rr at 100 A/125°C enable efficient synchronous rectification. The 175°C T_J rating also supports sustained operation under high ambient conditions typical in powertrain compartments.

Does AUIRFSL8409 require a negative gate voltage for reliable turn-off in high-di/dt environments?

No - the device has a gate threshold voltage range of 2.2–3.9 V and does not require negative bias for robust turn-off. However, a –5 V to –10 V gate drive improves noise immunity in high-di/dt EPS inverters by increasing the noise margin against Miller-induced false turn-on.

How is the 760 mJ single-pulse avalanche energy (E_AS) tested and validated?

E_AS is measured per JEDEC JESD24-11 using unclamped inductive switching (UIS) test circuit per Figure 24a/b: L = 0.15 mH, R_G = 50 Ω, I_AS = 100 A, V_GS = 10 V, starting T_J = 25°C. Each unit undergoes 100% UIS screening at 50% of rated E_AS during final test.

AUIRFSL8409 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Short Leads, I2PAK

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 450 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-262

AUIRFSL8409 FAQ

1.How can I place an order for AUIRFSL8409 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFSL8409 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFSL8409 reliable?

The price and inventory of AUIRFSL8409 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFSL8409 is usually 5 days.

3.What payment methods are accepted for AUIRFSL8409?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFSL8409 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFSL8409?

AUIRFSL8409 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFSL8409 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFSL8409?

For technical support, including AUIRFSL8409 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFSL8409 requirements.

6.How does Aetrix verify that AUIRFSL8409 is sourced from the original manufacturer or authorized distributors?

All AUIRFSL8409 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFSL8409 meets industry standards.

7.What is the process for return or replacement of AUIRFSL8409?

All AUIRFSL8409 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFSL8409, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFSL8409 part is unused and in its original packaging.

Return procedure for AUIRFSL8409:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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