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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFU3607

Name: AUIRFU3607
Brand: Infineon Technologies
SKU: AUIRFU3607
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFU3607

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: AUIRFU3607.pdf

Description:: MOSFET N CH 75V 56A I-PAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,893

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Product details

Overview

AUIRFU3607 from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in I-Pak (TO-251AA) package, rated for 75 V V_DS, 7.34 mΩ R_DS(on) at V_GS = 10 V and 46 A, with 175°C maximum junction temperature and repetitive avalanche capability up to T_Jmax. It serves as a high-efficiency main or synchronous rectifier switch in 12 V/24 V automotive power systems including engine control units, body electronics, and DC-DC converters.

For engineers reviewing the AUIRFU3607 datasheet, AUIRFU3607 pinout, AUIRFU3607 application, or AUIRFU3607 equivalent, key selection criteria include its silicon-limited 80 A continuous drain current at T_C = 25°C, fast switching (t_r = 110 ns, t_f = 96 ns), low gate charge (Q_g = 56 nC typ.), and automotive qualification per AEC-Q101 standards.

Technical Context

This MOSFET employs Infineon's advanced planar HEXFET process to achieve ultra-low on-resistance per die area while maintaining robust avalanche ruggedness. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) and transconductance (g_fs = 115 S) support stable turn-on under wide temperature ranges (−55°C to +175°C).

The device integrates a fast-recovery body diode with t_rr = 33–50 ns and Q_rr = 32–48 nC, enabling efficient operation in hard-switched and synchronous rectification topologies. Thermal performance is characterized by R_θJC = 1.045°C/W and R_θJA = 110°C/W (free-air), supporting high-power density designs in constrained automotive environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and load switching.
R_DS(on) typ.	7.34 mΩ at V_GS = 10 V, I_D = 46 A - Enables <1.6 W conduction loss at 40 A, critical for thermal management in sealed ECUs.
I_D (Silicon Limited)	80 A at T_C = 25°C - Supports peak load currents in starter relays and HVAC blower drivers without derating.
E_AS	120 mJ - Single-pulse avalanche energy rating ensures reliability during inductive load turn-off transients in solenoid control.
t_r/t_f	110 ns / 96 ns - Fast edge rates reduce switching losses in 100–500 kHz DC-DC stages used in ADAS power supplies.
Q_g	56 nC typ. - Low gate drive power requirement simplifies gate driver selection and reduces EMI in high-frequency PWM circuits.
T_J max	+175°C - Enables operation in under-hood environments without forced cooling or oversized heatsinks.

Pinout & Package

Package: I-Pak (TO-251AA), surface-mount, single-die, three-terminal configuration with exposed drain pad for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive to fully enhance channel; threshold range (2.0–4.0 V) ensures compatibility with 3.3 V/5 V microcontrollers via level-shifting.
S (Source)	Reference node for gate drive and current return path	Internally tied to substrate; must be connected to PCB ground plane with low-inductance layout to minimize shoot-through risk during switching.
D (Drain)	Main current-carrying terminal and heat sink interface	Exposed metal tab electrically connected to drain; requires soldered thermal pad to inner copper layers for R_θJC = 1.045°C/W performance.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.34 mΩ typ. at 10 V drive enables >96% efficiency in 40 A, 12 V load switches with <1.5 W steady-state loss.
175°C operating junction temperature	Allows direct mounting in high-ambient zones (e.g., near exhaust manifolds or alternators) without external derating or thermal throttling.
Repetitive avalanche rated	14 mJ EAR supports ≥10⁵ cycles of unclamped inductive switching in fuel injector drivers without degradation.
Fast body diode recovery	t_rr = 33 ns (T_J = 25°C) minimizes reverse recovery loss and voltage overshoot in synchronous buck converters.
AEC-Q101 qualified	Validated for automotive use across temperature cycling, humidity, mechanical shock, and lifetime reliability per JEDEC JESD47.

Applications

Engine Control Unit (ECU) Load Switch

Automotive DC-DC Converter Primary Switch

Use Scenario: High-side switching of fuel pump, radiator fan, or ignition coil in 12 V engine bay systems.

IC Role / Device Role / Timing Role: Main power switch controlling load activation/deactivation with precise PWM duty cycle for torque modulation.

Use Value: 75 V rating withstands load dump transients up to 60 V; 175°C T_Jmax prevents thermal shutdown during sustained full-load operation.

Use Scenario: Primary-side switch in 12 V → 5 V/3.3 V isolated flyback or forward converter powering infotainment SoCs.

IC Role / Device Role / Timing Role: High-frequency (200–300 kHz) power switch enabling compact magnetics and low output ripple.

Use Value: 56 nC Q_g and 110 ns t_r reduce gate drive loss and switching transition time, improving overall converter efficiency by ~1.2%.

Body Electronics Power Distribution

Electric Power Steering (EPS) Motor Driver Half-Bridge

Use Scenario: Centralized power distribution module managing door locks, window lifts, and mirror controls.

IC Role / Device Role / Timing Role: Low-side switch in smart fuse architecture with current sensing and short-circuit protection.

Use Value: 80 A silicon-limited current supports simultaneous actuation of multiple loads; 7.34 mΩ R_DS(on) limits self-heating during extended hold states.

Use Scenario: Low-side switch in three-phase inverter half-bridge driving 24 V EPS brushless motor.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch handling regenerative braking energy and phase commutation spikes.

Use Value: 120 mJ E_AS absorbs inductive kickback during fault conditions; 33 ns t_rr suppresses shoot-through risk during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V V_DS, 1.4 mΩ R_DS(on), 220 A I_D, PowerFLAT 5x6 package	Limited to 40 V systems; unsuitable for 12 V load dump or 24 V commercial vehicle rails.	Select only for low-voltage, high-current applications where 75 V rating is unnecessary and board space is constrained.
ON Semiconductor NTMFS5C673NL	60 V V_DS, 3.2 mΩ R_DS(on), 100 A I_D, SO-8FL package	Lower breakdown voltage; lacks AEC-Q101 certification for critical safety functions.	Acceptable for non-safety-critical body electronics but not for ECU or EPS where 75 V margin and full qualification are mandatory.

Compared with STL220N4F7AG and NTMFS5C673NL, the AUIRFU3607 uniquely balances 75 V robustness, AEC-Q101 compliance, and 7.34 mΩ on-resistance in a thermally optimized I-Pak package-making it the only choice for 12 V/24 V automotive main switch applications requiring both transient immunity and long-term reliability.

Availability

AUIRFU3607 is available at Aetrix Electronics and suitable for engine control units, automotive DC-DC converters, and body electronics power distribution modules requiring stable component supply across multi-year vehicle production cycles.

Supply support for AUIRFU3607 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

The AUIRFU3607 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, chassis, and body control systems.

FAQ

Is AUIRFU3607 pin-compatible with AUIRFR3607?

Yes, AUIRFU3607 (I-Pak/TO-251AA) and AUIRFR3607 (D-Pak/TO-252AA) share identical pinout: Gate, Drain, Source in G-D-S order with Drain tab as thermal pad. Mechanical footprint differs, but circuit-level replacement is possible with PCB layout adjustment for the smaller I-Pak outline and reduced thermal pad area.

What is the maximum allowable gate-to-source voltage for AUIRFU3607?

The absolute maximum V_GS is ±20 V. Operation above ±15 V risks oxide damage; recommended drive is 10 V for full enhancement with margin. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent transients from exceeding this limit during hot-plug or ESD events.

Does AUIRFU3607 support synchronous rectification in DC-DC converters?

Yes-the device's low R_DS(on) (7.34 mΩ), fast body diode (t_rr = 33 ns), and low Q_rr (32 nC) enable efficient synchronous rectification in 12 V input buck converters. Its 175°C rating allows sustained operation at high ambient temperatures common in automotive power supply enclosures.

How is avalanche ruggedness validated for AUIRFU3607 in automotive use?

Infineon validates repetitive avalanche per AEC-Q101 stress test G7, using unclamped inductive switching (UIS) with I_AS = 46 A, L = 0.12 mH, and R_G = 25 Ω. The 14 mJ EAR rating reflects guaranteed energy absorption over 10⁵ cycles without parameter shift, confirmed by production lot testing and failure analysis.

AUIRFU3607 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3070 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

AUIRFU3607 FAQ

1.How can I place an order for AUIRFU3607 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFU3607 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFU3607 reliable?

The price and inventory of AUIRFU3607 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFU3607 is usually 5 days.

3.What payment methods are accepted for AUIRFU3607?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFU3607 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFU3607?

AUIRFU3607 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFU3607 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFU3607?

For technical support, including AUIRFU3607 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFU3607 requirements.

6.How does Aetrix verify that AUIRFU3607 is sourced from the original manufacturer or authorized distributors?

All AUIRFU3607 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFU3607 meets industry standards.

7.What is the process for return or replacement of AUIRFU3607?

All AUIRFU3607 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFU3607, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFU3607 part is unused and in its original packaging.

Return procedure for AUIRFU3607:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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