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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFZ44VZSTRL

Name: AUIRFZ44VZSTRL
Brand: Infineon Technologies
SKU: AUIRFZ44VZSTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFZ44VZSTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRFZ44VZSTRL.pdf

Description:: MOSFET N-CH 60V 57A D2PAK

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Product details

Overview

AUIRFZ44VZSTRL from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D2-Pak (TO-263) package, rated for 60 V V_DS, 9.6 mΩ R_DS(on) (typ.) at V_GS = 10 V and I_D = 34 A, with 175°C maximum junction temperature and 230 A pulsed drain current. It serves as a high-efficiency main switch in 12 V automotive power distribution systems, including starter solenoid drivers and battery disconnect circuits.

For engineers reviewing the AUIRFZ44VZSTRL datasheet, AUIRFZ44VZSTRL pinout, AUIRFZ44VZSTRL application, or AUIRFZ44VZSTRL equivalent, key selection criteria include its 1.64 °C/W R_θJC, tested 110 mJ single-pulse avalanche energy, 43 nC total gate charge, and AEC-Q101 qualification for under-hood switching reliability.

Technical Context

This MOSFET employs Infineon's advanced planar process to achieve ultra-low on-resistance per die area while maintaining robust unclamped inductive switching capability. Its 175°C T_J rating enables operation in high-ambient engine-bay environments without derating below 40 A continuous current at T_C = 100°C.

The device features a fully characterized body diode with 23 ns typical reverse recovery time (t_rr) and 17 nC Q_rr at I_F = 34 A, supporting synchronous rectification and freewheeling in DC-DC converters. Gate threshold voltage (V_GS(th)) is tightly distributed between 2.0 V and 4.0 V, ensuring stable turn-on across automotive temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Withstands full 12 V automotive system transients up to ISO 7637-2 Pulse 5a (75 V/100 ms).
R_DS(on) (typ.)	9.6 mΩ @ V_GS = 10 V, I_D = 34 A - Delivers ≤ 11 W conduction loss at 34 A, enabling compact thermal design.
I_D (cont.)	57 A @ T_C = 25°C - Supports high-current loads such as HVAC blower motors and fuel pumps.
E_AS (tested)	110 mJ - 100% production-tested avalanche energy ensures reliable unclamped inductive switching in relay/snubberless designs.
Q_g	43 nC (max. 65 nC) - Enables fast turn-on with <15 ns delay using standard 1 A gate drivers.
R_θJC	1.64 °C/W - Allows direct heatsink mounting for >90 W power dissipation before exceeding 175°C junction limit.
t_rr	23 ns (typ.) - Minimizes switching losses during diode commutation in half-bridge topologies.

Pinout & Package

Supplied in surface-mount D2-Pak (TO-263) package with exposed drain pad for low-inductance, high-current PCB routing and thermal transfer. Package dimensions conform to JEDEC MO-211AB standard.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring ≥10 V drive for full enhancement; 200 nA leakage at –20 V ensures low standby current.
D	Drain	Main high-side current path; electrically connected to exposed copper pad for thermal and electrical grounding to heatsink.
S	Source	Reference node for gate drive; internal source inductance (L_S = 7.5 nH) impacts high-di/dt switching stability.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified per Infineon's automotive stress test protocol, including HTGB, HTRB, and UIS lifetime validation.
Repetitive avalanche rating	Rated for unlimited repetitive avalanche events up to T_Jmax = 175°C, verified via Fig. 12a–12b waveforms and thermal modeling.
Ultra-low R_DS(on)	9.6 mΩ typ. at 25°C and 12 mΩ max. at 175°C - maintains <2× resistance increase over full operating range.
Fast switching performance	14 ns t_d(on), 62 ns t_r, 35 ns t_d(off), 38 ns t_f - supports >100 kHz PWM in motor control and DC-DC applications.
Lead-free & RoHS	Halogen-free, Pb-free terminations compliant with J-STD-609 Class 1 moisture sensitivity level (MSL 1).

Applications

Engine Start/Stop Control

12 V Battery Disconnect Switch

Use Scenario: Controls engagement of starter motor solenoid during cold cranking, handling peak currents up to 200 A for <1 s.

IC Role / Device Role / Timing Role: Main high-side power switch with integrated avalanche ruggedness to absorb inductive kickback from solenoid coil.

Use Value: Eliminates need for external TVS or snubber due to 110 mJ tested E_AS, reducing BOM count and board space by 30%.

Use Scenario: Isolates auxiliary battery bank from main vehicle electrical system during deep discharge or fault conditions.

IC Role / Device Role / Timing Role: Bidirectional load switch managing up to 57 A continuous current with low on-state voltage drop (<600 mV at 34 A).

Use Value: 9.6 mΩ R_DS(on) limits power loss to <11 W, enabling passive cooling and extending service life beyond 10 years.

Electric Power Steering (EPS) Motor Driver

DC-DC Converter High-Side Switch

Use Scenario: Half-bridge high-side switch in 12 V → 24 V boost converter supplying EPS assist motor.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET synchronized with low-side counterpart to minimize shoot-through risk.

Use Value: 43 nC Q_g allows clean 100 ns gate transitions using 1 A driver, reducing switching loss by 22% vs. legacy 75 mΩ parts.

Use Scenario: Primary switch in isolated flyback or forward converter powering infotainment and ADAS modules.

IC Role / Device Role / Timing Role: High-voltage, high-current switch operating at 200 kHz with controlled dv/dt to meet CISPR 25 Class 5 EMI limits.

Use Value: 23 ns t_rr and 17 nC Q_rr suppress voltage overshoot during diode recovery, cutting EMI filter component count by 2.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 2.2 mΩ R_DS(on) (typ.), 220 A I_D, DFN 8×8 package - lower R_DS(on) but requires multilayer PCB thermal vias.	Preferred for space-constrained ADAS domain controllers where footprint is critical and thermal management is optimized.	Select when board-level thermal resistance < 1.2 °C/W is achievable and gate drive can support 85 nC Q_g.
IRFZ44NPBF	60 V, 28 mΩ R_DS(on) (typ.), 49 A I_D, TO-220 - higher on-resistance, no automotive qualification, 150°C T_J max.	Suitable only for non-automotive industrial power supplies where AEC-Q101 compliance is not required.	Choose only for cost-sensitive, non-safety-critical 12 V systems with ambient < 85°C and no transient immunity requirements.

Compared with STL220N6F7 and IRFZ44NPBF, AUIRFZ44VZSTRL delivers optimal balance of automotive qualification, thermal robustness (1.64 °C/W), and proven 110 mJ avalanche margin - making it the default choice for under-hood switching where reliability trumps raw R_DS(on) minimization.

Availability

AUIRFZ44VZSTRL is available at Aetrix Electronics and suitable for engine control units, battery management systems, and electric power steering modules requiring stable component supply across extended automotive product lifecycles.

Supply support for AUIRFZ44VZSTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and qualification infrastructure.

AUIRFZ44VZSTRL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V and 48 V vehicle subsystems demanding robustness against load dump, reverse battery, and repetitive avalanche stress.

FAQ

What is the maximum allowable gate-to-source voltage for AUIRFZ44VZSTRL?

The absolute maximum V_GS is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative gate voltage beyond –20 V may cause irreversible threshold shift. Recommended gate drive is +10 V to +15 V for full enhancement with margin, and –5 V to –10 V for fast turn-off and noise immunity in noisy automotive environments.

Does AUIRFZ44VZSTRL require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to dampen ringing and control dV/dt. For 12 V automotive switching at ≤100 kHz, a 10 Ω series resistor is recommended. This value balances switching speed (t_d(on) ≈ 14 ns) against EMI generation and gate driver stress, especially when driving into the device's 1690 pF C_iss input capacitance.

Can AUIRFZ44VZSTRL be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (1.5× increase from 25°C to 175°C) enables inherent current sharing. Successful parallel operation requires matched layout: identical gate trace lengths, Kelvin source connections, and shared heatsink mounting to minimize thermal gradients. Derate total current by 15% versus sum of individual ratings.

Is the body diode in AUIRFZ44VZSTRL suitable for synchronous rectification?

No - while the body diode is fully specified (t_rr = 23 ns, Q_rr = 17 nC), it lacks soft-recovery characteristics and exhibits significant reverse recovery overshoot. For synchronous rectification, use a discrete Schottky or SiC diode in anti-parallel configuration, or select a MOSFET with explicitly rated "Schottky-like" body diode (e.g., Infineon OptiMOS™ 5).

AUIRFZ44VZSTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

AUIRFZ44VZSTRL FAQ

1.How can I place an order for AUIRFZ44VZSTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFZ44VZSTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFZ44VZSTRL reliable?

The price and inventory of AUIRFZ44VZSTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFZ44VZSTRL is usually 5 days.

3.What payment methods are accepted for AUIRFZ44VZSTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFZ44VZSTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFZ44VZSTRL?

AUIRFZ44VZSTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFZ44VZSTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFZ44VZSTRL?

For technical support, including AUIRFZ44VZSTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFZ44VZSTRL requirements.

6.How does Aetrix verify that AUIRFZ44VZSTRL is sourced from the original manufacturer or authorized distributors?

All AUIRFZ44VZSTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFZ44VZSTRL meets industry standards.

7.What is the process for return or replacement of AUIRFZ44VZSTRL?

All AUIRFZ44VZSTRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFZ44VZSTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFZ44VZSTRL part is unused and in its original packaging.

Return procedure for AUIRFZ44VZSTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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