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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRFZ48ZS

Name: AUIRFZ48ZS
Brand: Infineon Technologies
SKU: AUIRFZ48ZS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRFZ48ZS

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AUIRFZ48ZS.pdf

Description:: MOSFET N-CH 55V 61A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRFZ48ZS from Infineon Technologies is an automotive-grade N-channel HEXFET® Power MOSFET in D²Pak (TO-263) package, rated for 55 V V(BR)DSS, 61 A continuous drain current at 25°C, and ultra-low RDS(on) of 11 mΩ max at VGS = 10 V. It operates up to 175°C junction temperature, supports fast switching with 43 nC total gate charge, and is qualified per AEC-Q101 for engine control, DC-DC converters, and motor drive stages in 12 V/24 V automotive systems.

For engineers reviewing the AUIRFZ48ZS datasheet, AUIRFZ48ZS pinout, AUIRFZ48ZS application, or AUIRFZ48ZS equivalent, key selection criteria include its 175°C thermal rating, repetitive avalanche capability (EAS = 240 mJ), low Coss eff. (380 pF), and RoHS-compliant lead-free construction - all critical for high-reliability under-hood power switching.

Technical Context

This MOSFET employs advanced trench-gate process technology to achieve optimized conduction and switching trade-offs. Its design integrates a robust intrinsic body diode (trr = 20–31 ns, Qrr = 13–20 nC) and supports unclamped inductive switching with validated repetitive avalanche performance up to TJ = 175°C using L = 0.11 mH, RG = 25 Ω, and IAS = 37 A.

The device features thermally enhanced D²Pak packaging with RθJC = 1.64 °C/W, enabling high-power operation on PCB-mounted heatsinks. Its gate threshold voltage (VGS(th) = 2.0–4.0 V) and forward transconductance (gfs = 24 S typ.) support stable drive across wide temperature ranges, while dv/dt immunity exceeds 300 V/ns.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	55 V - Withstands up to 55 V drain-source blocking voltage before avalanche onset, suitable for 42 V automotive systems and 36 V industrial rails.
RDS(on) max	11 mΩ @ VGS = 10 V, TC = 25°C - Enables <0.5 W conduction loss at 61 A, reducing thermal stress in high-current switch nodes.
ID continuous	61 A @ TC = 25°C - Supports high-current loads such as starter solenoid drivers or HVAC blower motors without external parallel devices.
EAS	240 mJ - Single-pulse avalanche energy rating ensures survivability during inductive turn-off transients in relay or solenoid driving.
TJ max	175°C - Certified for under-hood environments including engine control units and transmission control modules.
Qg	43–64 nC - Gate charge optimized for efficient drive with standard 12 V gate drivers, minimizing switching losses at 100–200 kHz.
Coss eff.	380 pF - Effective output capacitance enables predictable hard-switching behavior and aids snubberless design in DC-DC topologies.

Pinout & Package

Package: D²Pak (TO-263), surface-mount, isolated tab (drain-connected), 3-pin configuration with exposed copper pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 2.0–4.0 V threshold signal; requires ≤64 nC charge for full enhancement; sensitive to ESD (HBM Class H1B).
D (Drain)	High-side power path	Internally connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to system ground.
S (Source)	Power return / reference node	Serves as local ground reference for gate drive; internal source inductance (LS = 7.5 nH) affects di/dt-induced ringing during turn-on.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 compliant with MSL1 moisture sensitivity, ensuring reliability in reflow-soldered automotive ECUs.
Repetitive avalanche rating	Validated for repeated unclamped inductive switching up to TJ = 175°C, eliminating need for external clamping in solenoid drivers.
Ultra-low RDS(on)	8.6 mΩ typical at VGS = 10 V enables >97% efficiency in 12 V/50 A buck converters at 100 kHz.
Fast body diode	trr = 20–31 ns and Qrr = 13–20 nC reduce reverse recovery losses in synchronous rectification and freewheeling paths.
Thermal robustness	RθJC = 1.64 °C/W allows 40 W dissipation with 65°C case-to-ambient rise, supporting compact heatsink designs.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive DC-DC Converter Primary Switch

Use Scenario: High-speed, high-current switching of 12 V fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil current with precise 1–5 ms pulse width modulation.

Use Value: 11 mΩ RDS(on) limits conduction loss to <0.4 W at 60 A peak, while 175°C rating ensures operation near hot engine manifolds.

Use Scenario: Primary-side switch in 12 V to 5 V/3.3 V buck converter powering ADAS sensors and microcontrollers.

IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 200 kHz with 43 nC gate charge enabling efficient drive with integrated gate driver ICs.

Use Value: 380 pF Coss eff. and 24 nC Qgd minimize switching loss and EMI generation during high-frequency transitions.

Electric Power Steering (EPS) Motor Phase Leg

Automotive HVAC Blower Motor Controller

Use Scenario: Half-bridge phase-leg switch in 24 V EPS motor inverters requiring bidirectional current handling and fault tolerance.

IC Role / Device Role / Timing Role: N-channel high-side or low-side switch in three-phase inverter, leveraging body diode for freewheeling during PWM dead-time.

Use Value: 240 mJ EAS and 37 A IAS rating withstand inductive kickback during overcurrent shutdown without external protection.

Use Scenario: PWM-controlled high-current switch for 12 V HVAC blower motors delivering up to 60 A peak load.

IC Role / Device Role / Timing Role: Low-side switching element in linear or PWM fan speed controller with thermal derating up to 100°C ambient.

Use Value: 61 A ID rating at 25°C and 43 A at 100°C enable single-device operation without paralleling, simplifying BOM and layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4L10AG	40 V V(BR)DSS, 220 A ID, 1.0 mΩ RDS(on), PowerFLAT 5x6 package	Higher current, lower voltage - suited for 12 V battery-side switches but not 42 V stop-start systems	Select when higher peak current and lower RDS(on) are prioritized over 55 V blocking margin.
IRF1405ZPBF	55 V V(BR)DSS, 169 A ID, 3.3 mΩ RDS(on), TO-220AB package, non-automotive grade	Lacks AEC-Q101 qualification and 175°C rating - limited to under-dash or cabin applications	Choose only for cost-sensitive non-safety-critical 12 V systems where automotive qualification is not mandated.

Compared with STL220N4L10AG and IRF1405ZPBF, AUIRFZ48ZS uniquely balances 55 V blocking, 61 A current, AEC-Q101 compliance, and D²Pak thermal performance - making it optimal for space-constrained, thermally demanding under-hood switching where both voltage margin and qualification are mandatory.

Availability

AUIRFZ48ZS is available at Aetrix Electronics and suitable for engine control units, automotive DC-DC converters, and electric power steering systems requiring stable component supply across extended production lifecycles.

Supply support for AUIRFZ48ZS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

AUIRFZ48ZS belongs to Infineon's automotive-qualified HEXFET® MOSFET product line, engineered specifically for high-reliability, high-temperature power switching in engine, chassis, and body electronics.

FAQ

What is the maximum allowable gate-to-source voltage for AUIRFZ48ZS?

The absolute maximum VGS rating is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement, with 12–15 V used in high-speed applications to reduce switching time - always with series gate resistance (≥10 Ω) to dampen ringing.

Does AUIRFZ48ZS require a heatsink in typical automotive applications?

Yes - even with RθJC = 1.64 °C/W, sustained 40 A operation at 175°C junction temperature requires a heatsink or copper pour. For 61 A continuous current, a minimum 25 cm² 2 oz copper area with thermal vias is recommended; forced-air cooling extends safe operating area in enclosed ECUs.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has VSD = 1.3 V max and trr = 20–31 ns, offering lower Qrr than most 60 V Schottkys but higher forward drop. It is sufficient for freewheeling in low-frequency PWM (<50 kHz) but not ideal for high-frequency synchronous rectification where dedicated Schottky or GaN diodes provide lower loss.

Is AUIRFZ48ZS compatible with lead-free reflow soldering processes?

Yes - it is RoHS-compliant and rated for lead-free reflow with peak temperature of 260°C for 10 seconds (1.6 mm from case). The D²Pak package meets IPC/JEDEC J-STD-020 moisture sensitivity level MSL1, eliminating bake requirements prior to assembly.

AUIRFZ48ZS Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1720 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 91W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

AUIRFZ48ZS FAQ

1.How can I place an order for AUIRFZ48ZS through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRFZ48ZS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRFZ48ZS reliable?

The price and inventory of AUIRFZ48ZS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRFZ48ZS is usually 5 days.

3.What payment methods are accepted for AUIRFZ48ZS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRFZ48ZS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRFZ48ZS?

AUIRFZ48ZS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRFZ48ZS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRFZ48ZS?

For technical support, including AUIRFZ48ZS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRFZ48ZS requirements.

6.How does Aetrix verify that AUIRFZ48ZS is sourced from the original manufacturer or authorized distributors?

All AUIRFZ48ZS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRFZ48ZS meets industry standards.

7.What is the process for return or replacement of AUIRFZ48ZS?

All AUIRFZ48ZS units undergo pre-shipment inspection (PSI). If there is an issue with AUIRFZ48ZS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRFZ48ZS part is unused and in its original packaging.

Return procedure for AUIRFZ48ZS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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