Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AUIRL1404STRL

Part No.:
AUIRL1404STRL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixAUIRL1404STRL.pdf
Description:
MOSFET N-CH 40V 160A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,057

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AUIRL1404STRL from Infineon is an automotive-grade N-channel enhancement-mode power MOSFET in D2PAK (TO-263AB) package, rated for 40V VDS, 4.0 mΩ RDS(on) at VGS = 10 V and 95 A, with 175°C maximum junction temperature and full avalanche rating. It serves as a high-current, low-loss main switch in DC-DC converters, motor drivers, and battery disconnect circuits in engine control units and body electronics.

For engineers reviewing the AUIRL1404STRL datasheet, AUIRL1404STRL pinout, AUIRL1404STRL application, or AUIRL1404STRL equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–3.0 V), fast switching (tr = 270 ns, tf = 130 ns), repetitive avalanche capability (EAR = 20 mJ), and thermal robustness (RθJC = 0.75 °C/W).

Technical Context

This HEXFET® device uses Infineon's Stripe Planar process to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching performance. Its dynamic dV/dt rating (5.0 V/ns) and integral body diode (VSD = 1.3 V at 95 A) support high-speed synchronous rectification and bidirectional current handling in automotive power stages.

The MOSFET operates across –55°C to +175°C junction range and is qualified to AEC-Q101 standards. Gate charge parameters (Qg = 140 nC, Qgd = 60 nC) indicate moderate drive strength requirements, and its Coss eff. of 1500 pF enables predictable hard-switching behavior up to 100 kHz in buck and half-bridge topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage for 12 V/24 V automotive systems with transient margin.
RDS(on) max4.0 mΩ @ VGS = 10 V, ID = 95 A - Enables <1 W conduction loss at 160 A continuous drain current under heatsinked conditions.
ID continuous160 A @ TC = 25°C - Supports high-power load switching without external paralleling in starter solenoid or HVAC blower drives.
EAS520 mJ - Single-pulse avalanche energy allows safe operation during inductive turn-off transients in relay replacement applications.
tr/tf270 ns / 130 ns - Fast edge rates reduce switching losses in 20–100 kHz PWM-controlled DC-DC converters.
RθJC0.75 °C/W - Enables direct mounting to aluminum chassis for passive thermal management in space-constrained ECUs.
VGS(th)1.0–3.0 V - Compatible with 3.3 V and 5 V microcontroller GPIOs without level-shifting circuitry.

Pinout & Package

Package: D2PAK (TO-263AB), surface-mount, isolated tab (drain-connected), 3-terminal configuration with standard footprint per IR package drawing.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (S)Low-side reference node; connects to ground plane or current-sense shunt for accurate sensing.
Pin 2 (Gate)Control input (G)High-impedance MOS gate requiring <140 nC total charge; sensitive to ESD and layout parasitics.
Pin 3 (Drain)Power output (D)Internally connected to exposed copper tab; must be soldered to large copper pour for thermal and electrical integrity.

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS ≥ 4.3 V, enabling direct interface with automotive MCUs and ASICs without gate drivers.
Full avalanche ratingRated for repetitive avalanche events up to Tjmax, eliminating need for external snubbers in inductive load switching.
175°C operating temperatureQualified for under-hood environments including transmission control modules and turbocharger actuators.
Low Qgd/Qg ratioQgd = 60 nC of total Qg = 140 nC - improves Miller immunity and reduces risk of shoot-through in bridge configurations.

Applications

Engine Control Unit (ECU) Power StageAutomotive DC-DC Converter

Use Scenario: High-side switching of fuel injector or ignition coil driver circuits with 12 V nominal supply and ±100 V transients.

IC Role / Device Role / Timing Role: Main power switch controlling pulse-width modulated current delivery with precise timing resolution down to 1 µs.

Use Value: 4.0 mΩ RDS(on) minimizes I²R heating during extended duty cycles, and 175°C rating ensures reliability at under-hood temperatures.

Use Scenario: Synchronous rectifier in 12 V to 5 V/3.3 V buck converter powering ADAS sensors and infotainment processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 200 kHz with tight dead-time control to prevent cross-conduction.

Use Value: Fast 130 ns fall time and low 1.3 V body diode forward drop reduce conduction and reverse recovery losses by >15% vs. discrete Schottky solutions.

Body Control Module (BCM) Load DriverElectric Power Steering (EPS) Motor Driver

Use Scenario: Driving high-current loads such as headlamp ballasts, seat heaters, or window lift motors in centralized BCM architecture.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated current limiting and diagnostics via external sense resistor.

Use Value: 160 A continuous rating supports peak loads up to 300 W, and avalanche energy rating eliminates need for external TVS clamping.

Use Scenario: Half-bridge leg in 3-phase inverter driving 24 V brushed or brushless EPS assist motor.

IC Role / Device Role / Timing Role: Low-side switch in phase-leg configuration with gate drive referenced to source, requiring low Qgd for clean commutation.

Use Value: 60 nC Qgd and 5.0 V/ns dV/dt rating suppress false turn-on during high dv/dt transitions in motor phase legs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4F7AGRDS(on) = 3.7 mΩ @ 10 V, but higher Qg = 175 nC and no AEC-Q101 qualification.Not approved for safety-critical automotive functions; limited to non-ASIL consumer-grade modules.Select only for cost-sensitive non-automotive industrial applications where qualification is not required.
IRL1404ZPBFSame RDS(on) and VDS, but TO-220 package (higher RθJA = 62 °C/W) and no 175°C rating (150°C max).Suitable for lab prototypes or low-volume aftermarket modules, not for production ECU designs.Prefer only when through-hole assembly is mandated or thermal budget permits larger heatsinks.

Compared with STL220N4F7AG and IRL1404ZPBF, AUIRL1404STRL uniquely combines AEC-Q101 qualification, 175°C operation, and D2PAK thermal performance-making it the sole choice for volume production in engine bay and EPS systems where reliability and thermal margin are non-negotiable.

Availability

AUIRL1404STRL is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and body control modules requiring stable component supply across multi-year automotive production programs.

Supply support for AUIRL1404STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRL1404STRL belongs to the AUIR automotive HEXFET® power MOSFET family, designed specifically for high-reliability, high-current switching in harsh-temperature automotive subsystems including powertrain, chassis, and electrification.

FAQ

What is the maximum recommended PCB copper area for thermal relief with AUIRL1404STRL?

The datasheet specifies optimal thermal performance using a 1-inch square FR-4 PCB pad (AN-994). For production use, a minimum 400 mm² (20 mm × 20 mm) copper pour with 2 oz copper thickness and 6+ thermal vias to inner ground planes is recommended to maintain RθJA ≤ 25 °C/W in still air.

Does AUIRL1404STRL support parallel operation for higher current capacity?

Yes-its positive temperature coefficient of RDS(on) (see Fig. 4) enables inherent current sharing. Parallel operation requires matched gate drive impedance (<5 Ω per device), symmetrical layout, and individual gate resistors (≥10 Ω) to damp oscillation. Derate total current by 15% for two devices.

Can AUIRL1404STRL be used in linear mode (e.g., as a pass transistor)?

No-it is not characterized or rated for linear (SOA-limited) operation. The Safe Operating Area curve (Fig. 8) shows severe derating above 10 V VDS at high current, and thermal runaway risk increases rapidly beyond 1 ms pulse width. Use only in saturated switching mode.

Is the body diode suitable for reverse polarity protection in 24 V battery systems?

Yes-the body diode has VSD = 1.3 V at 95 A and trr = 63–94 ns, making it viable for low-loss reverse polarity protection. However, ensure peak reverse current does not exceed ISM = 640 A (pulsed) and that thermal design accounts for forward conduction loss during fault condition.

AUIRL1404STRL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.3V, 10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 95A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
140 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6600 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.8W (Ta), 200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

AUIRL1404STRL FAQ

1.How can I place an order for AUIRL1404STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRL1404STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRL1404STRL reliable?

The price and inventory of AUIRL1404STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRL1404STRL is usually 5 days.

3.What payment methods are accepted for AUIRL1404STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRL1404STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRL1404STRL?

AUIRL1404STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRL1404STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRL1404STRL?

For technical support, including AUIRL1404STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRL1404STRL requirements.

6.How does Aetrix verify that AUIRL1404STRL is sourced from the original manufacturer or authorized distributors?

All AUIRL1404STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRL1404STRL meets industry standards.

7.What is the process for return or replacement of AUIRL1404STRL?

All AUIRL1404STRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRL1404STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRL1404STRL part is unused and in its original packaging.

Return procedure for AUIRL1404STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRL1404STRL Tags

  • AUIRL1404STRL
  • AUIRL1404STRL PDF
  • AUIRL1404STRL Datasheet
  • AUIRL1404STRL Specifications
  • AUIRL1404STRL Images
  • Infineon Technologies
  • Infineon Technologies AUIRL1404STRL
  • Buy AUIRL1404STRL
  • AUIRL1404STRL Price
  • AUIRL1404STRL Distributor
  • AUIRL1404STRL Supplier
  • AUIRL1404STRL Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER