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Infineon Technologies AUIRL7732S2TR
- Part No.:
- AUIRL7732S2TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric SC
- Datasheet:
-
AUIRL7732S2TR.pdf
- Description:
- MOSFET N-CH 40V 14A DIRECTFET SC
- Quantity:
- Payment:
- Shipping:
Inventory:4,780
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Product details
Overview
AUIRL7732S2TR from Infineon is an automotive-grade N-channel Power MOSFET in DirectFET® Small Can (SC) package, rated for 40V V(BR)DSS, 5.0 mΩ RDS(on) at 10V VGS and 35A ID, with 22 nC total gate charge and 175°C maximum junction temperature. It serves as a high-efficiency synchronous rectifier or control switch in high-frequency DC-DC converters and motor drives on ICE/HEV/EV platforms.
For engineers reviewing the AUIRL7732S2TR datasheet, AUIRL7732S2TR pinout, AUIRL7732S2TR application, or AUIRL7732S2TR equivalent, key selection criteria include its 38% smaller footprint vs SO-8, dual-sided cooling capability, low Qg/RDS(on) ratio, 175°C thermal rating, and qualification per AEC-Q101 for under-hood power systems.
Technical Context
This MOSFET uses Infineon's Automotive HEXFET® silicon with advanced trench process to achieve 5.0 mΩ RDS(on) at 10V and 7.5 mΩ at 4.5V, enabling efficient operation in 12V/48V automotive bus systems. Its 22 nC Qg and low Crss (210 pF) support fast switching in buck converters up to 1 MHz.
The DirectFET® SC package features top-side drain (D), dual-source (S) terminals, and center-gate (G) layout-enabling low-inductance, dual-sided PCB cooling. Thermal resistance RθJ-Can is 3.7°C/W, and RθJ-PCB is 1.0°C/W when mounted per AN-1035.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 40 V - Withstands 40V drain-source blocking voltage before avalanche conduction begins. |
| RDS(on) typ. | 5.0 mΩ @ VGS = 10V, ID = 35A - Enables <1.8W conduction loss at 35A, critical for high-current automotive loads. |
| Qg typ. | 22 nC - Low gate drive energy reduces controller IC loading and switching losses in high-frequency operation. |
| ID (Silicon Limited) | 58 A @ TC = 25°C - Maximum continuous current defined by silicon thermal limit, not package. |
| TJ max | +175°C - Supports operation in under-hood environments without derating below ambient extremes. |
| Package | DirectFET® SC - Metal-can package with top-side drain, dual-source pads, and 0.7 mm profile for compact, thermally optimized layouts. |
Pinout & Package
DirectFET® Small Can (SC) is a surface-mount metal-can package with exposed top-side drain, dual bottom-side source pads, and center gate terminal. It measures 3.3 mm × 3.3 mm footprint and 0.7 mm height, offering 38% area reduction versus SO-8 and compatibility with standard reflow profiles per AN-1035.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Top Metal Pad) | Drain | Primary high-side current path; thermally coupled to heatsink or PCB copper for dual-sided cooling. |
| S (Bottom Left Pad) | Source | Low-side return path; electrically and thermally connected to ground plane via large copper fill. |
| S (Bottom Right Pad) | Source | Parallel source connection to reduce conduction resistance and improve current sharing. |
| G (Center Bottom Pad) | Gate | Control input with 0.64 Ω internal resistance; requires low-impedance driver to minimize switching time. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive Qualification | AEC-Q101 qualified for engine bay and powertrain applications with full traceability and zero-defect screening. |
| Dual-Sided Cooling | Top-side drain and bottom-source pads enable simultaneous thermal interface to heatsink and PCB, reducing RθJA by up to 50% vs SO-8. |
| Low Parasitic Inductance | Optimized leadframe geometry minimizes Lgd and Lgs, suppressing voltage overshoot during hard switching in 48V systems. |
| Repetitive Avalanche Rated | Rated for 124 mJ tested single-pulse and 25 mJ repetitive avalanche energy-enabling robustness in unclamped inductive turn-off. |
Applications
| 48V Mild Hybrid DC-DC Converter | Electric Power Steering (EPS) Motor Driver |
|---|---|
Use Scenario: High-efficiency bidirectional 12V–48V DC-DC conversion in P0/P1 mild hybrid architectures. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in secondary-side synchronous rectification stage, operating at 200–500 kHz. Use Value: 5.0 mΩ RDS(on) and 22 nC Qg reduce conduction + switching losses by >18% vs legacy SO-8 MOSFETs, improving system efficiency to >96%. | Use Scenario: Three-phase inverter driving brushless DC motor in steering column-mounted EPS units. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg, handling peak currents up to 58A with 175°C TJ capability. Use Value: 175°C rating enables sustained operation at 150°C case temperature without derating; dual-source pads lower thermal resistance by 35%. |
| Start-Stop Battery Management System | Onboard Charger (OBC) Auxiliary Supply |
Use Scenario: Load switch and reverse polarity protection in 12V battery management modules for automatic engine stop-start cycles. IC Role / Device Role / Timing Role: High-side power switch controlling auxiliary loads during cranking transients. Use Value: 40V V(BR)DSS withstands load-dump spikes up to 35V; 175°C rating ensures reliability during repeated 120°C ambient exposure. | Use Scenario: Primary-side switching FET in isolated flyback or forward converter powering OBC control logic and gate drivers. IC Role / Device Role / Timing Role: 40V-rated control MOSFET operating at 100–250 kHz with tight gate drive timing requirements. Use Value: Low Qg (22 nC) and fast tr/tf (123 ns/37 ns) enable precise PWM control with minimal dead-time loss in digital controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB120N04S4-02 | 40V, 120A ID, 1.2 mΩ RDS(on), TO-263 package, higher current but larger footprint and 1.2 mm height. | Preferred for higher-current inverters where board space allows; unsuitable for ultra-thin modules due to height. | Select when peak current exceeds 58A and thermal mass permits TO-263 mounting. |
| IAUS220N04S5L034 | 40V, 220A ID, 0.34 mΩ RDS(on), TOLL package, 175°C, but 3× larger footprint and 2.3 mm height. | Targeted at main traction inverter stages-not optimized for compact DC-DC or EPS submodules. | Choose only for primary inverter legs requiring >100A continuous current and forced-air cooling. |
Compared with IPB120N04S4-02 and IAUS220N04S5L034, the AUIRL7732S2TR delivers optimal power density for space-constrained 40V automotive subsystems-its 3.3×3.3 mm SC footprint and 0.7 mm profile enable integration into stacked PCBs and thin enclosures where larger packages cannot fit.
Availability
AUIRL7732S2TR is available at Aetrix Electronics and suitable for 48V mild hybrid DC-DC converters, electric power steering motor drivers, and start-stop battery management systems requiring stable component supply across automotive production lifecycles.
Supply support for AUIRL7732S2TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and AEC-Q101 validation infrastructure.
The AUIRL7732S2TR belongs to Infineon's Automotive HEXFET® Power MOSFET product line, engineered specifically for high-power-density, high-reliability switching in 12V/48V vehicle electrical systems-including DC-DC, motor control, and battery protection.
FAQ
What is the maximum continuous drain current for AUIRL7732S2TR at 100°C case temperature?
The maximum continuous drain current is 41 A at TC = 100°C and VGS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects silicon-limited current under thermal equilibrium conditions and assumes proper PCB copper area and airflow per AN-1035 mounting guidelines.
Does AUIRL7732S2TR support logic-level gate drive?
No-it is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.5 V, but RDS(on) is specified at VGS = 10 V (5.0 mΩ) and VGS = 4.5 V (7.5 mΩ). For reliable low-RDS(on) operation, a 10 V gate drive is recommended; 4.5 V yields higher conduction loss and is suitable only for moderate-current applications.
How does the DirectFET® SC package enable dual-sided cooling?
The DirectFET® SC package exposes the drain on the top metal surface and places both source terminals on the bottom side. This allows thermal interface material (TIM) to be applied between the top drain and an external heatsink while simultaneously soldering the bottom source pads to a high-copper PCB layer-creating two parallel thermal paths that reduce total junction-to-ambient resistance by up to 50% compared to SO-8.
Is AUIRL7732S2TR suitable for avalanche-prone circuits like inductive load switching?
Yes-it is fully rated for repetitive avalanche operation, with 124 mJ tested single-pulse and 25 mJ repetitive avalanche energy (EAR) at TJ = 25°C. Its rugged body diode (trr = 23 ns, Qrr = 16 nC) and 175°C junction rating allow safe operation in unclamped inductive turn-off events common in motor drivers and solenoid controls when designed per AN-1005 guidelines.
AUIRL7732S2TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric SC
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.6mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2020 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 41W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ SC
AUIRL7732S2TR FAQ
1.How can I place an order for AUIRL7732S2TR through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRL7732S2TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRL7732S2TR reliable?
The price and inventory of AUIRL7732S2TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRL7732S2TR is usually 5 days.
3.What payment methods are accepted for AUIRL7732S2TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRL7732S2TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRL7732S2TR?
AUIRL7732S2TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRL7732S2TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRL7732S2TR?
For technical support, including AUIRL7732S2TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRL7732S2TR requirements.
6.How does Aetrix verify that AUIRL7732S2TR is sourced from the original manufacturer or authorized distributors?
All AUIRL7732S2TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRL7732S2TR meets industry standards.
7.What is the process for return or replacement of AUIRL7732S2TR?
All AUIRL7732S2TR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRL7732S2TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRL7732S2TR part is unused and in its original packaging.
Return procedure for AUIRL7732S2TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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