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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRLR120NTRL

Name: AUIRLR120NTRL
Brand: Infineon Technologies
SKU: AUIRLR120NTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRLR120NTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AUIRLR120NTRL.pdf

Description:: MOSFET N-CH 100V 10A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRLR120NTRL from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, rated for 100 V V_DS, 10 A continuous drain current at T_C = 25°C, and 0.185 Ω max R_DS(on) at V_GS = 10 V. It features logic-level gate drive (V_GS(th) = 1.0–2.0 V), 175°C junction operation, full avalanche rating, and is qualified to AEC-Q101 standards for engine control, body electronics, and DC-DC converters.

For engineers reviewing the AUIRLR120NTRL datasheet, AUIRLR120NTRL pinout, AUIRLR120NTRL application, or AUIRLR120NTRL equivalent, key selection criteria include its 100 V breakdown voltage, low 0.185 Ω on-resistance at 10 V gate drive, 175°C thermal capability, automotive qualification status, and D-Pak thermal performance with R_θJC = 3.1 °C/W.

Technical Context

This MOSFET employs advanced planar silicon technology optimized for high-reliability automotive power switching. Its cellular HEXFET® structure delivers low specific on-resistance while maintaining robust dynamic dV/dt immunity (5.0 V/ns) and fast switching (t_r = 35 ns, t_f = 22 ns) under hard-switching conditions.

The device integrates a co-packaged body diode with 1.3 V forward voltage at 6 A and 110–160 ns reverse recovery time. It supports repetitive avalanche up to T_jmax and is characterized for operation across –55°C to +175°C, with gate drive compatible down to 4.0 V (R_DS(on) ≤ 0.265 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands up to 100 V drain-source blocking voltage, suitable for 48 V automotive systems and 24 V industrial rails.
R_DS(on) max	0.185 Ω @ V_GS = 10 V, I_D = 6 A - Enables low conduction loss in high-current switching nodes (e.g., motor drivers, solenoid controls).
I_D cont.	10 A @ T_C = 25°C - Supports sustained 10 A load current with adequate heatsinking on PCB-mounted D-Pak footprint.
T_J range	–55°C to +175°C - Certified for under-hood automotive environments including engine management and transmission control units.
Q_g	20 nC - Determines gate driver strength requirement; enables efficient 100 kHz+ PWM switching with moderate gate resistance.
E_AS	85 mJ - Specifies single-pulse unclamped inductive energy handling capacity without failure, critical for relay/snubberless designs.
V_GS(th)	1.0–2.0 V - Logic-level threshold allows direct interface with 3.3 V or 5 V microcontrollers without level-shifting.

Pinout & Package

Package: D-Pak (TO-252AA), surface-mount, thermally enhanced with exposed drain pad. Mounting requires FR-4 PCB with recommended copper pour per AN-994.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Exposed metal tab electrically connected to drain; must be soldered to large copper area for thermal and electrical integrity.
Source	Power return / reference node for gate drive	Low-inductance source connection critical for stable switching; internal source inductance LS = 7.5 nH affects ringing.
Gate	Control input for channel conduction	High-impedance MOS gate requiring <20 nC total charge; sensitive to ESD and layout-induced noise.

Key Features

Feature	Design Value
Automotive qualification	AEC-Q101 qualified - Validated for lifetime reliability in automotive power modules, including temperature cycling and humidity testing.
Logic-level gate drive	V_GS(th) = 1.0–2.0 V - Eliminates need for external gate driver ICs when controlled by standard MCU GPIOs.
Full avalanche rating	E_AS = 85 mJ, I_AR = 6.0 A - Enables robust operation in inductive load switching without external snubbers.
High-temperature operation	T_J max = +175°C - Maintains R_DS(on) stability and safe operating area (SOA) in confined under-hood spaces.
Low dynamic losses	Q_gd/Q_gs = ~2.2 - Optimized charge ratio improves switching efficiency and reduces Miller-induced shoot-through risk.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive Body Control Module (BCM)

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 8 A and 1 ms pulse widths.

IC Role / Device Role / Timing Role: Primary power switch controlling injector coil energization and de-energization timing.

Use Value: 35 ns rise time and 22 ns fall time ensure precise fuel metering; 175°C rating sustains operation near hot engine blocks.

Use Scenario: Driving 24 V LED headlamps and HVAC blower motors in centralized body electronics architecture.

IC Role / Device Role / Timing Role: Low-side load switch enabling PWM dimming and soft-start sequencing.

Use Value: 0.185 Ω R_DS(on) minimizes power loss at 10 A loads; AEC-Q101 ensures 15-year field reliability.

48 V Mild Hybrid DC-DC Converter

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: Synchronous rectification in 48 V/12 V bidirectional buck-boost converter stages.

IC Role / Device Role / Timing Role: Secondary-side power MOSFET operating in high-frequency (200–500 kHz) hard-switching mode.

Use Value: 20 nC Q_g enables efficient gate drive at high frequency; 100 V V_DS provides margin against transients in 48 V bus.

Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverter, switching up to 30 A peak per phase.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology, commutating motor current with fast edge control.

Use Value: Full avalanche rating handles inductive kickback during fault conditions; R_θJC = 3.1 °C/W supports thermal management in compact EPS housing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL100N10F7	100 V, 100 A (T_C = 25°C), R_DS(on) = 0.0075 Ω, PowerFLAT 5x6 package	Higher current rating and lower R_DS(on), but larger footprint and higher gate charge (Q_g = 65 nC)	Preferred for high-efficiency, high-current inverters where board space permits larger package and stronger gate drive is available.
IPB180N10N3 G	100 V, 180 A, R_DS(on) = 0.0032 Ω, TO-263-7 package, integrated Kelvin source	Superior conduction loss and precision current sensing via Kelvin source, but requires 7-pin layout and higher cost	Selected for high-accuracy motor current feedback in EPS or ADAS actuators where sensing fidelity outweighs layout complexity.

Compared with STL100N10F7 and IPB180N10N3G, the AUIRLR120NTRL offers balanced trade-offs: lower gate drive demand (20 nC vs. 65/120 nC), proven D-Pak thermal reliability in constrained spaces, and AEC-Q101 validation at mid-tier cost-making it optimal for cost-sensitive, thermally constrained automotive switches below 10 A continuous.

Availability

AUIRLR120NTRL is available at Aetrix Electronics and suitable for automotive body electronics, engine control units, and 48 V mild hybrid DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for AUIRLR120NTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

The AUIRLR120NTRL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, chassis, and electrification subsystems.

FAQ

Is AUIRLR120NTRL pin-compatible with non-automotive variants like IRFR120N?

No. While both share D-Pak packaging and similar electrical ratings, AUIRLR120NTRL includes automotive-specific process enhancements, extended temperature characterization (–55°C to +175°C), AEC-Q101 test compliance, and tighter parameter screening. The IRFR120N lacks automotive qualification and has different thermal derating curves and avalanche test limits.

What is the maximum recommended gate resistor value for reliable switching at 100 kHz?

For 100 kHz PWM with 20 nC Q_g, a gate resistor of 10–22 Ω is recommended to limit peak current while maintaining 35 ns rise time. Lower values (<10 Ω) improve speed but increase driver stress; higher values (>33 Ω) degrade switching performance and raise switching losses disproportionately.

Can AUIRLR120NTRL be used in parallel configurations?

Yes, but with strict layout symmetry: matched gate trace lengths, individual gate resistors (≤10 Ω), Kelvin source connections, and shared thermal plane. The positive R_DS(on) temperature coefficient (0.12 V/°C) supports current sharing, but mismatched parasitics can cause imbalance above 5 A per device.

Does the body diode support synchronous rectification in buck converters?

It can be used for low-frequency (<100 kHz) synchronous rectification, but its 110–160 ns t_rr and 410–620 nC Q_rr cause significant reverse recovery loss at higher frequencies. For >200 kHz operation, a discrete Schottky or GaN FET is preferred to minimize diode-related losses.

AUIRLR120NTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 185mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 440 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

AUIRLR120NTRL FAQ

1.How can I place an order for AUIRLR120NTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRLR120NTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRLR120NTRL reliable?

The price and inventory of AUIRLR120NTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRLR120NTRL is usually 5 days.

3.What payment methods are accepted for AUIRLR120NTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRLR120NTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRLR120NTRL?

AUIRLR120NTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRLR120NTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRLR120NTRL?

For technical support, including AUIRLR120NTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRLR120NTRL requirements.

6.How does Aetrix verify that AUIRLR120NTRL is sourced from the original manufacturer or authorized distributors?

All AUIRLR120NTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRLR120NTRL meets industry standards.

7.What is the process for return or replacement of AUIRLR120NTRL?

All AUIRLR120NTRL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRLR120NTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRLR120NTRL part is unused and in its original packaging.

Return procedure for AUIRLR120NTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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