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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRLR2908

Name: AUIRLR2908
Brand: Infineon Technologies
SKU: AUIRLR2908
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRLR2908

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AUIRLR2908.pdf

Description:: MOSFET N-CH 80V 30A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,683

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Product details

Overview

AUIRLR2908 from Infineon is an automotive-grade N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 80 V V_DS, 22.5 mΩ R_DS(on) @ V_GS = 10 V, and 30 A continuous drain current (package-limited). It features logic-level gate drive (V_GS(th) max 2.5 V), 175°C junction operation, and full repetitive avalanche rating - deployed in high-reliability DC-DC converters and motor control stages in engine management and body electronics.

For engineers reviewing the AUIRLR2908 datasheet, AUIRLR2908 pinout, AUIRLR2908 application, or AUIRLR2908 equivalent, key selection criteria include its 4.5 V gate drive capability, 250 nC tested single-pulse avalanche energy, 75 ns diode reverse recovery time, and thermal resistance of 1.3°C/W junction-to-case - critical for thermally constrained under-hood designs.

Technical Context

This HEXFET® device uses Infineon's Stripe Planar process to achieve low R_DS(on) per silicon area while maintaining ruggedness. Its gate threshold voltage (1.0–2.5 V) enables direct microcontroller interfacing without level-shifting, and its 35 S transconductance supports fast switching with low gate charge (22–33 nC).

The MOSFET integrates a robust intrinsic body diode with 1.3 V forward voltage at 23 A and 75–110 ns reverse recovery time. Its safe operating area (SOA) is defined up to 175°C, with linear derating (0.77 W/°C) beyond 25°C case temperature - validated for unclamped inductive switching up to 250 mJ.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Withstands transient overvoltage spikes common in 12 V automotive systems (e.g., load dump up to 40 V + margin).
R_DS(on) @ 10 V	22.5 mΩ typ. - Enables <1.8 W conduction loss at 30 A, reducing heatsink requirements in space-constrained modules.
I_D (pkg-limited)	30 A continuous - Determined by D-Pak package thermal limits, not silicon; sets practical current ceiling in PCB-mounted designs.
V_GS(th)	1.0–2.5 V - Ensures turn-on with standard 3.3 V or 5 V logic outputs, eliminating external gate drivers in low-speed control.
E_AS (tested)	250 mJ - Validated avalanche energy at T_J = 25°C, L = 0.71 mH, supporting robust fault handling in inductive loads.
t_rr	75–110 ns - Limits diode recovery losses during hard-switching, critical for efficiency in synchronous buck and H-bridge topologies.
R_θJC	1.3 °C/W - Enables precise junction temperature estimation using case temperature measurement in production thermal monitoring.

Pinout & Package

Supplied in D-Pak (TO-252) surface-mount package with exposed drain pad for enhanced thermal performance. Pin assignment follows standard G-S-D layout (Gate–Source–Drain) with Drain connected to the large copper tab on the bottom side.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives logic-level voltage (≥4.5 V) to fully enhance channel; requires <33 nC total charge for full switching.
Source (S)	Reference node / return path	Serves as common reference for gate drive and current sensing; low-inductance layout essential for stable switching.
Drain (D)	High-side power terminal	Connected to exposed copper pad; primary heat transfer path to PCB thermal plane - must be soldered to ≥1"² copper area.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V - compatible with automotive MCUs (e.g., S32K, TC3xx) without external level shifters.
Fully avalanche rated	Repetitive avalanche allowed up to T_Jmax = 175°C - eliminates need for external clamping in solenoid or relay driver circuits.
175°C operating temperature	Rated for continuous operation at junction temperatures up to 175°C - meets AEC-Q101 Grade 0 requirements for under-hood placement.
Low R_DS(on) × Q_g figure-of-merit	22.5 mΩ × 22 nC = 495 mΩ·nC - balances conduction and switching losses for high-efficiency 100–500 kHz DC-DC stages.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-side switching of 12 V fuel injectors with peak currents up to 25 A and PWM frequencies ≤2 kHz.

IC Role / Device Role / Timing Role: Power switch controlling injector coil energization; handles unclamped inductive flyback during turn-off.

Use Value: 250 mJ tested avalanche energy and 175°C rating ensure reliable operation across ambient temperatures from −40°C to +125°C under hood.

Use Scenario: Low-side PWM control of brushed DC blower motors in climate control systems, requiring 30 A continuous current.

IC Role / Device Role / Timing Role: Main power stage switch; body diode conducts freewheeling current during PWM off-time.

Use Value: 75 ns reverse recovery time minimizes diode conduction loss and EMI during commutation, improving system efficiency by ~2.1% vs. standard MOSFETs.

12 V → 5 V/3.3 V Automotive DC-DC Converter

Electronic Power Steering (EPS) Assist Motor Driver

Use Scenario: Synchronous rectifier in buck converter supplying MCU and sensor rails, switching at 300 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier; body diode replaced by active conduction to reduce V_F loss.

Use Value: 22.5 mΩ R_DS(on) at 4.5 V gate drive cuts conduction loss by 38% versus 30 mΩ alternatives, enabling >92% conversion efficiency.

Use Scenario: Half-bridge leg in 12 V assist motor driver, delivering peak 50 A pulses with 10% duty cycle.

IC Role / Device Role / Timing Role: High-current switching element; withstands repetitive avalanche during motor stall or short-circuit events.

Use Value: 150 A pulsed drain current rating and 1.3°C/W R_θJC support short-term overload without thermal runaway in safety-critical EPS systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V V_DS, 1.7 mΩ R_DS(on), DFN5x6 package - lower voltage, much lower R_DS(on), no avalanche rating.	Only suitable for 5 V–12 V low-voltage subsystems (e.g., infotainment USB PD); cannot replace in 80 V load-dump tolerant circuits.	Select only if system max V_DS ≤45 V and avalanche robustness is not required.
IRLR024NPBF	55 V V_DS, 45 mΩ R_DS(on), same D-Pak package - higher R_DS(on), lower voltage, no AEC-Q101 qualification.	Limited to non-safety-critical 12 V accessories (e.g., seat heaters); lacks automotive temperature and reliability validation.	Acceptable for cost-sensitive non-automotive industrial use where 80 V rating and 175°C operation are unnecessary.

Compared with STL220N4F7AG and IRLR024NPBF, the AUIRLR2908 uniquely combines 80 V rating, AEC-Q101 qualification, 175°C operation, and tested 250 mJ avalanche energy - making it the only viable choice for safety-critical, high-transient automotive power stages.

Availability

AUIRLR2908 is available at Aetrix Electronics and suitable for engine control units, HVAC motor drives, automotive DC-DC converters, and electronic power steering systems requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for AUIRLR2908 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and AEC-Q101 validation infrastructure.

The AUIRLR2908 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, chassis, and body control modules.

FAQ

Is AUIRLR2908 qualified to AEC-Q101 standards?

Yes, the AUIRLR2908 is fully AEC-Q101 qualified for automotive applications. It undergoes stress testing including HTGB, HTRB, AC/DC life test, and temperature cycling across −55°C to +175°C. Qualification documentation is available via Infineon's official automotive portal and includes full failure analysis reports per test condition.

What is the maximum recommended PCB copper area for thermal management?

Infineon specifies a minimum 1"² (6.45 cm²) FR-4 PCB copper area connected to the Drain pad for optimal thermal performance. This achieves the published R_θJA = 50°C/W. For higher power density, adding internal copper layers or thermal vias beneath the pad reduces R_θJA to ~35°C/W in multi-layer boards.

Can AUIRLR2908 be used in synchronous rectification at 500 kHz?

Yes - its 22 nC typical gate charge and 95 ns rise time support efficient operation at 500 kHz. However, gate drive strength must deliver ≥1 A peak current to achieve full enhancement within 20 ns. Layout must minimize source inductance (<7.5 nH) to prevent oscillation during fast transitions.

Does the body diode support continuous bidirectional current in H-bridge configurations?

No - the intrinsic body diode is optimized for unidirectional freewheeling (source-to-drain). In H-bridge configurations, it conducts only during the off-time of the opposite switch. Continuous bidirectional current requires external anti-parallel diodes or complementary MOSFETs; the body diode's 1.3 V V_SD and 75 ns t_rr are not rated for sustained reverse conduction.

AUIRLR2908 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 1890 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 120W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

AUIRLR2908 FAQ

1.How can I place an order for AUIRLR2908 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRLR2908 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRLR2908 reliable?

The price and inventory of AUIRLR2908 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRLR2908 is usually 5 days.

3.What payment methods are accepted for AUIRLR2908?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRLR2908 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRLR2908?

AUIRLR2908 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRLR2908 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRLR2908?

For technical support, including AUIRLR2908 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRLR2908 requirements.

6.How does Aetrix verify that AUIRLR2908 is sourced from the original manufacturer or authorized distributors?

All AUIRLR2908 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRLR2908 meets industry standards.

7.What is the process for return or replacement of AUIRLR2908?

All AUIRLR2908 units undergo pre-shipment inspection (PSI). If there is an issue with AUIRLR2908, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRLR2908 part is unused and in its original packaging.

Return procedure for AUIRLR2908:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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