Infineon Technologies AUIRLR3915

Overview

AUIRLR3915 from Infineon is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak package, rated for 55 V V_DS, 12 mΩ R_DS(on) at V_GS = 10 V and 30 A continuous drain current (package-limited), with logic-level gate drive compatibility and 175°C maximum junction temperature. It serves as a high-efficiency, ruggedized switching element in DC-DC converters, motor control inverters, and load-switching circuits in engine management and body electronics.

For engineers reviewing the AUIRLR3915 datasheet, AUIRLR3915 pinout, AUIRLR3915 application, or AUIRLR3915 equivalent, key selection criteria include its 12 mΩ on-resistance at 10 V gate drive, avalanche-rated operation up to T_Jmax, fast switching (t_r = 51 ns, t_f = 100 ns), and automotive qualification per AEC-Q101 standards.

Technical Context

This MOSFET employs Infineon's Stripe Planar HEXFET® architecture to achieve low specific on-resistance while maintaining robust avalanche performance. Its logic-level gate threshold (1.0–3.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting circuitry.

The device supports repetitive unclamped inductive switching with validated energy limits (E_AS(tested) = 600 mJ) and thermal stability across –55°C to +175°C operating range. Junction-to-case thermal resistance of 1.3°C/W allows effective heatsinking in compact automotive modules.

Key Specifications

Pinout & Package

Supplied in surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical performance. Pin assignment follows standard three-terminal configuration: Gate (G), Drain (D), Source (S).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL130N5LF6AG and IRLR8729PBF, the AUIRLR3915 uniquely combines AEC-Q101 qualification, 175°C operation, and validated avalanche performance-making it the only choice for safety-relevant automotive power switching where thermal stress and inductive transients coexist.

Availability

AUIRLR3915 is available at Aetrix Electronics and suitable for engine control units, HVAC motor controllers, start-stop battery switches, and ADAS camera power supplies requiring stable component supply across automotive production lifecycles.

Supply support for AUIRLR3915 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

The AUIRLR3915 belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine, chassis, and driver-assistance systems.

FAQ

Is AUIRLR3915 suitable for high-frequency switching above 500 kHz?

Yes-its 51 ns rise time and 100 ns fall time, combined with 61 nC total gate charge, support efficient operation up to 1 MHz in hard-switched topologies. However, layout parasitics and gate driver strength become critical above 500 kHz; use low-inductance PCB routing and ≥1 A peak gate drive capability.

What is the maximum pulsed drain current (I_DM) and under what conditions is it valid?

The AUIRLR3915 supports I_DM = 240 A for pulse widths ≤1.0 ms and duty cycle ≤2%, limited by junction temperature rise. This rating assumes T_C = 25°C, V_GS = 10 V, and proper heatsinking; actual achievable pulse current depends on thermal mass and transient impedance of the mounting interface.

Does AUIRLR3915 include integrated reverse diode protection?

No-it contains an intrinsic body diode (V_SD = 1.3 V at 30 A), but this diode is not optimized for fast recovery. For synchronous rectification or freewheeling with low reverse recovery loss, external Schottky or SiC diodes are recommended; trr = 62–93 ns confirms moderate recovery speed unsuitable for high-frequency ZVS designs.

How does the 175°C junction rating impact PCB layout and thermal design?

The 175°C rating permits sustained operation in high-ambient zones (e.g., near exhaust manifolds), but thermal design must ensure R_θJC ≤1.3°C/W is achieved via full-solder coverage of the exposed drain pad and ≥1 in² copper pour on inner layers. Use thermal vias under the pad and avoid silkscreen over thermal lands to maintain heat transfer efficiency.