Infineon Technologies AUIRLS3036-7TRL

Overview

AUIRLS3036-7TRL from Infineon is an automotive-grade N-channel HEXFET® Power MOSFET in D2PAK-7L package, rated for 60 V V_DS, 1.5 mΩ typical R_DS(on) at 10 V_GS, and 240 A continuous drain current (package-limited). It delivers ultra-low conduction loss and fast switching for high-efficiency 12 V/24 V automotive power stages including starter motor drivers and DC-DC converters.

For engineers reviewing the AUIRLS3036-7TRL datasheet, AUIRLS3036-7TRL pinout, AUIRLS3036-7TRL application, or AUIRLS3036-7TRL equivalent, key selection criteria include its 175°C junction rating, logic-level gate drive compatibility (V_GS(th) = 1.0–2.5 V), repetitive avalanche capability (E_AS = 300 mJ), and D2PAK-7L thermal performance (R_θJC = 0.40 °C/W).

Technical Context

This device uses Infineon's advanced trench-gate process to achieve silicon-limited 300 A ID at 25°C while maintaining robust package-limited 240 A operation under real-world PCB-mount conditions. Its dynamic dv/dt rating of 8.1 V/ns and low C_oss eff. (1460 pF energy-related) support stable commutation in high-di/dt automotive loads.

The integrated body diode features 1.3 V forward voltage at 180 A and 57 ns reverse recovery time at 25°C, enabling efficient synchronous rectification and unclamped inductive switching. Repetitive avalanche is validated up to T_Jmax with pulse-width-dependent I_AR curves defined per AN-1005.

Key Specifications

Pinout & Package

D2PAK-7L (TO-263-7) package with exposed drain pad for low-inductance, high-current PCB mounting and enhanced thermal transfer to heatsink or copper pour. Pin 1–7 arranged linearly with Gate, Source, and Drain terminals distributed to minimize loop inductance in high-frequency switching layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Compared with STL220N6F7 and IPB017N10N5, AUIRLS3036-7TRL uniquely balances 60 V rating, 1.5 mΩ conduction loss, D2PAK-7L thermal performance, and automotive qualification-making it optimal for 12 V/24 V high-current switching where efficiency, reliability, and thermal headroom are co-critical.

Availability

AUIRLS3036-7TRL is available at Aetrix Electronics and suitable for automotive power distribution units, electric power steering modules, and on-board charger designs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for AUIRLS3036-7TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine compartment and powertrain applications where thermal robustness and transient immunity are mandatory.

FAQ

What is the maximum continuous drain current for AUIRLS3036-7TRL at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 210 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 240 A rating at 25°C case temperature, based on the device's 2.5 W/°C linear derating factor and 380 W maximum power dissipation.

Does AUIRLS3036-7TRL require a gate resistor for automotive EMI compliance?

Yes - a 2.1 Ω gate resistor is used in the datasheet's switching characterization (Fig. 23b) to control di/dt and suppress radiated emissions. For ISO 11452-2/4-compliant designs, this value balances switching speed (td(off) = 89 ns) and EMI reduction; values below 1.5 Ω increase dv/dt-induced noise, while above 3.3 Ω raises switching losses unnecessarily.

Can AUIRLS3036-7TRL be used in parallel configurations for >300 A applications?

Yes - its positive R_DS(on) temperature coefficient (0.059 V/°C) ensures current sharing stability across paralleled devices. However, layout symmetry (matched gate trace inductance, shared source Kelvin connection, and identical thermal mounting) is mandatory; mismatched parasitics can cause >30% current imbalance even with matched parts.

Is the body diode in AUIRLS3036-7TRL optimized for synchronous rectification?

Yes - the body diode has 1.3 V forward voltage at 180 A and 57 ns reverse recovery time at 25°C, with Q_rr = 140 nC. These parameters meet automotive synchronous rectifier requirements in 100–200 kHz DC-DC converters, though external Schottky diodes may still be preferred for <10 ns trr needs in ultra-high-frequency topologies.