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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRLS8409-7P

Name: AUIRLS8409-7P
Brand: Infineon Technologies
SKU: AUIRLS8409-7P
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRLS8409-7P

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: AUIRLS8409-7P.pdf

Description:: MOSFET N-CH 40V 240A D2PAK

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Product details

Overview

AUIRLS8409-7P from Infineon is an automotive-grade N-channel HEXFET® Power MOSFET in D2PAK-7 package, rated for 40 V V_DSS, 0.50 mΩ typ. R_DS(on) at 10 V V_GS, and 240 A continuous drain current (package-limited). It serves as a high-current, low-loss power switch in battery disconnect and EPS motor control circuits.

For engineers reviewing the AUIRLS8409-7P datasheet, AUIRLS8409-7P pinout, AUIRLS8409-7P application, or AUIRLS8409-7P equivalent, key selection criteria include its 175°C junction rating, 1200 A pulsed drain capability, logic-level gate drive compatibility (V_GS(th) = 1.0–2.4 V), and validated repetitive avalanche performance up to T_jmax.

Technical Context

This MOSFET employs advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining robust thermal and avalanche ruggedness. Its gate structure supports fast switching (t_r = 71 ns, t_f = 115 ns) and low gate charge (Q_g = 177 nC typ.) under 10 V drive, enabling high-efficiency operation in hard-switched DC-DC and motor drive topologies.

The device integrates a co-packaged body diode with low V_SD (0.8 V typ. at 100 A) and controlled reverse recovery (Q_rr = 97 nC, t_rr = 52 ns), supporting synchronous rectification and bidirectional energy transfer in start-stop micro-hybrid systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; enables use in 12–24 V automotive battery systems with margin.
R_DS(on) typ.	0.50 mΩ @ V_GS = 10 V - Delivers <0.5 W conduction loss at 100 A, critical for thermal management in EPS modules.
I_D (pkg-limited)	240 A @ T_C = 25°C - Package-bound continuous current; defines PCB copper and heatsink requirements for sustained load switching.
E_AS (tested)	1580 mJ - Single-pulse avalanche energy rating; allows unclamped inductive turn-off without failure in relay replacement applications.
T_J max	+175°C - Enables operation in engine bay environments without derating; supports compact packaging in space-constrained modules.
Q_g	177 nC typ. - Gate charge determines driver strength requirement; compatible with standard 1–2 A gate drivers at 100 kHz switching.
V_GS(th)	1.0–2.4 V - Logic-level threshold enables direct interface with 3.3 V/5 V microcontrollers without level-shifting circuitry.

Pinout & Package

Package: D2PAK-7 (TO-263-7), surface-mount, thermally enhanced with exposed drain pad. Designed for high-current PCB mounting with low thermal resistance (R_θJC = 0.4°C/W).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6	Drain (internally paralleled)	High-current output path; electrically tied to exposed metal tab for thermal and electrical connection to heatsink/PCB pour.
7	Source	Main current return node; referenced for gate drive and sensing; connects to low-side shunt or controller ground plane.
G	Gate	Control input; requires low-inductance routing and local 10 nF bypass to suppress ringing during fast switching transitions.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at 4.5 V V_GS, enabling direct MCU GPIO control without external level shifters in 5 V systems.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to T_jmax; eliminates need for external snubbers in battery disconnect circuits.
Ultra-low R_DS(on)	0.50 mΩ typ. reduces I²R losses by >40% vs. legacy 1.2 mΩ devices at 100 A, lowering system temperature rise by ~15°C.
175°C junction rating	Supports full power operation in under-hood ambient up to +125°C with 50°C thermal margin, meeting AEC-Q101 Grade 0 requirements.
RoHS-compliant & lead-free	Meets automotive ELV directive; compatible with Pb-free reflow profiles (peak 260°C) and long-term reliability testing.

Applications

Electric Power Steering (EPS)

Battery Disconnect Switch

Use Scenario: High-current H-bridge motor driver controlling steering assist torque in 12 V vehicle platforms.

IC Role / Device Role / Timing Role: Low-side power switch in dual-phase configuration; handles bidirectional 200+ A peak currents during torque transients.

Use Value: 0.50 mΩ R_DS(on) minimizes conduction loss and thermal stress during sustained assist, extending module lifetime beyond 15-year vehicle service life.

Use Scenario: Solid-state replacement for mechanical relays in 12 V battery main feed, enabling smart energy management.

IC Role / Device Role / Timing Role: High-side or low-side main power switch; activated during ignition-on and deactivated during sleep mode.

Use Value: Repetitive avalanche rating (1580 mJ tested) ensures survival during load dump and inductive kickback events without external clamping.

Start/Stop Micro-Hybrid

High-Power DC-DC Converter

Use Scenario: Bidirectional power switch in 48 V/12 V bi-directional DC-DC converter for regenerative braking energy transfer.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side; conducts high-frequency 100–300 A ripple current with low V_SD forward drop.

Use Value: Body diode V_SD = 0.8 V typ. at 100 A reduces conduction loss by 30% vs. Schottky solutions, improving conversion efficiency above 95%.

Use Scenario: Primary-side high-side switch in 3 kW on-board charger DC-DC stage operating at 100 kHz.

IC Role / Device Role / Timing Role: Hard-switched power transistor; requires low Q_g (177 nC) and fast t_f (115 ns) to minimize switching loss.

Use Value: C_oss eff. (TR) = 2875 pF enables predictable turn-off timing and reduced voltage overshoot during ZVS transition attempts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 0.45 mΩ typ. R_DS(on), 220 A pkg-limited, DFN8 5x6 package	Lacks exposed drain pad; lower thermal conductivity (R_θJC = 0.9°C/W); not qualified for >155°C ambient	Prefer for space-constrained PCBs where thermal mass is managed externally; avoid in engine bay mounting.
IPB180N04S4-02	40 V, 0.55 mΩ typ. R_DS(on), 180 A pkg-limited, TO-263-7 package, same footprint	Higher R_DS(on) increases conduction loss by ~10% at 200 A; lower E_AS (1200 mJ)	Acceptable for cost-sensitive designs with margin on thermal design; verify avalanche margin in unclamped inductive loads.

Compared with STL220N4F7AG and IPB180N04S4-02, the AUIRLS8409-7P delivers superior thermal performance (0.4°C/W vs. ≥0.9°C/W), higher current capability (240 A vs. ≤220 A), and stronger avalanche ruggedness (1580 mJ vs. ≤1200 mJ), making it optimal for mission-critical EPS and battery switch applications requiring long-term reliability at 175°C.

Availability

AUIRLS8409-7P is available at Aetrix Electronics and suitable for Electric Power Steering (EPS), Battery Disconnect Switch, and Start/Stop Micro-Hybrid systems requiring stable component supply across extended automotive production lifecycles.

Supply support for AUIRLS8409-7P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The AUIRLS8409-7P belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in engine compartment and chassis-mounted power systems.

FAQ

What is the maximum continuous drain current for AUIRLS8409-7P at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 353 A (silicon-limited) and 240 A (package-limited). The lower value governs design; thus, 240 A is the practical limit. This reflects bond wire current capacity, not silicon thermal saturation, and remains constant regardless of junction temperature as long as case temperature does not exceed 100°C.

Does AUIRLS8409-7P support gate drive from a 3.3 V microcontroller?

No - while V_GS(th) starts at 1.0 V, full enhancement requires ≥4.5 V for R_DS(on) ≤ 0.85 mΩ. At 3.3 V, R_DS(on) exceeds 2.5 mΩ, increasing conduction loss by >5×. A dedicated gate driver (e.g., Infineon 2EDN7524) is required to deliver 10 V at ≥1 A peak current for reliable switching.

How is the 1580 mJ avalanche energy rating validated?

The 1580 mJ rating is measured per JEDEC JESD24-11 using unclamped inductive switching (UIS) test conditions: L = 0.146 mH, I_AS = 100 A, V_GS = 10 V, starting T_J = 25°C. It represents single-pulse energy absorption capability without parametric shift or catastrophic failure, confirmed across 100% production lot sampling.

Can AUIRLS8409-7P be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (0.033 V/°C) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared source inductance <1 nH to prevent oscillation. Derate total current by 15% for thermal coupling between adjacent devices on the same heatsink.

AUIRLS8409-7P Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 240A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.75mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 266 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 16488 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7

AUIRLS8409-7P FAQ

1.How can I place an order for AUIRLS8409-7P through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRLS8409-7P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRLS8409-7P reliable?

The price and inventory of AUIRLS8409-7P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRLS8409-7P is usually 5 days.

3.What payment methods are accepted for AUIRLS8409-7P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRLS8409-7P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRLS8409-7P?

AUIRLS8409-7P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRLS8409-7P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRLS8409-7P?

For technical support, including AUIRLS8409-7P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRLS8409-7P requirements.

6.How does Aetrix verify that AUIRLS8409-7P is sourced from the original manufacturer or authorized distributors?

All AUIRLS8409-7P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRLS8409-7P meets industry standards.

7.What is the process for return or replacement of AUIRLS8409-7P?

All AUIRLS8409-7P units undergo pre-shipment inspection (PSI). If there is an issue with AUIRLS8409-7P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRLS8409-7P part is unused and in its original packaging.

Return procedure for AUIRLS8409-7P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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