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Infineon Technologies AUIRLU3110Z

Part No.:
AUIRLU3110Z
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
AetrixAUIRLU3110Z.pdf
Description:
MOSFET N-CH 100V 42A IPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,489

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Product details

Overview

AUIRLU3110Z from Infineon is an automotive-grade N-channel enhancement-mode Power MOSFET in I-Pak package, rated for 100 V VDS, 11 mΩ RDS(on) at VGS = 10 V, 42 A continuous drain current (package-limited), and 175 °C maximum junction temperature. It serves as a high-efficiency main or synchronous rectifier switch in 12 V/24 V automotive power systems including DC-DC converters, motor drivers, and load switches.

For engineers reviewing the AUIRLU3110Z datasheet, AUIRLU3110Z pinout, AUIRLU3110Z application, or AUIRLU3110Z equivalent, this part supports logic-level gate drive (VGS(th) = 1.0–2.5 V), delivers fast switching (tr = 110 ns, tf = 48 ns), and enables robust operation under repetitive avalanche stress up to Tjmax.

Technical Context

This MOSFET employs Infineon's HEXFET® process to achieve ultra-low on-resistance per die area while maintaining high ruggedness. Its 175 °C operating temperature rating and 140 mJ single-pulse avalanche energy (EAS) support sustained operation in under-hood environments with elevated ambient temperatures.

The device features low gate charge (Qg = 34–48 nC) and optimized capacitance profile (Ciss = 3980 pF, Coss = 310 pF at VDS = 25 V), enabling efficient high-frequency switching in buck converters and BLDC gate drivers without excessive driver loss.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Withstands transients up to ISO 7637-2 Pulse 5a (120 V) in 12 V automotive systems
RDS(on) max 14 mΩ at VGS = 10 V, ID = 38 A - Enables ≤0.5 W conduction loss at 42 A continuous load
ID (package) 42 A - Limited by lead-frame thermal and current-carrying capacity, not silicon
Qg 48 nC max - Determines gate driver current requirement (~1.2 A peak for 40 ns rise time)
EAS 140 mJ tested - Guarantees single-pulse unclamped inductive switching survival at full rated current
TJ max +175 °C - Allows direct mounting on engine-control PCBs without derating below 150 °C ambient
VGS(th) 2.5 V max - Fully enhanced with standard 3.3 V or 5 V logic-level microcontroller outputs

Pinout & Package

Package: I-Pak (TO-251AA), surface-mount with isolated tab (drain-connected). Thermal resistance RθJC = 1.05 °C/W enables direct heatsink attachment via soldered tab.

Pin/Terminal Circuit Role Design Meaning
G Gate Controls channel conduction; requires <100 nA leakage current and 16 V absolute max rating
S Source Reference node for gate drive; internal source inductance (LS = 7.5 nH) impacts di/dt-induced voltage overshoot
D Drain High-side or low-side power path terminal; electrically connected to exposed tab for thermal and electrical sinking

Key Features

Feature Design Value
Logic-level gate drive VGS(th) ≤ 2.5 V ensures full enhancement from 3.3 V MCU GPIO without level-shifting circuitry
Repetitive avalanche rated Validated for repeated unclamped inductive switching up to Tjmax, eliminating need for external snubbers in solenoid drivers
Automotive qualification AEC-Q101 qualified per Infineon's automotive stress test standards, including HTGB, HTRB, and temperature cycling
Ultra-low RDS(on) 11 mΩ typ. at 10 V reduces conduction loss by >30% vs. legacy 100 V MOSFETs in 48 V mild-hybrid auxiliary supplies
Fast body diode trr = 34–51 ns and Qrr = 42–63 nC minimize reverse-recovery loss in synchronous rectification topologies

Applications

Engine Control Unit (ECU) Fuel Injector Driver 12 V Automotive DC-DC Converter

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 40 A and pulse widths down to 1 ms.

IC Role / Device Role / Timing Role: Low-side power switch with integrated body diode providing freewheeling path during turn-off.

Use Value: 175 °C rating allows placement near engine compartment electronics; 14 mΩ RDS(on) limits self-heating to <1.5 W at 30 A DC.

Use Scenario: Primary-side synchronous rectifier in 12 V → 5 V/3.3 V buck converter powering ADAS sensors and infotainment modules.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 250–500 kHz with logic-level PWM control.

Use Value: Low Qg (48 nC) and fast tf (48 ns) reduce switching loss to <120 mW at 300 kHz, improving efficiency by 2.1% over comparable MOSFETs.

Electric Power Steering (EPS) Motor Phase Switch Automotive HVAC Blower Motor Controller

Use Scenario: Half-bridge phase leg in 24 V EPS motor drive handling 35 A RMS current and 100 A peak surge.

IC Role / Device Role / Timing Role: High-current N-channel switch with avalanche capability to absorb inductive kickback during emergency shutdown.

Use Value: 140 mJ EAS and 250 A IDM enable safe operation during fault conditions without external clamping diodes.

Use Scenario: PWM-controlled 12 V blower motor driver with variable speed and soft-start functionality.

IC Role / Device Role / Timing Role: Low-side switch modulating motor current using 20 kHz carrier frequency to suppress audible noise.

Use Value: 11 mΩ RDS(on) and 1.05 °C/W RθJC maintain junction temperature <125 °C even at 42 A continuous, avoiding thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL140N10F7 RDS(on) = 9.5 mΩ @ 10 V, but only rated to 150 °C Tjmax; no AEC-Q101 documentation publicly available Lacks validated repetitive avalanche performance and automotive qualification evidence Acceptable for non-safety-critical 12 V accessory loads where ambient <105 °C and transient stress is low
IRLR024NTRPBF Higher RDS(on) = 45 mΩ @ 10 V; same I-Pak package and logic-level gate, but only industrial-grade (not AEC-Q101) Not qualified for automotive under-hood use; limited to cabin or battery management subsystems Lower-cost option for prototyping or non-automotive industrial motor controls requiring identical footprint

Compared with STL140N10F7 and IRLR024NTRPBF, AUIRLU3110Z uniquely combines 175 °C operation, AEC-Q101 certification, and 14 mΩ on-resistance-making it the only choice for production-grade 12 V/24 V power stages subject to ISO 16750-4 thermal shock and ISO 7637-2 transient immunity requirements.

Availability

AUIRLU3110Z is available at Aetrix Electronics and suitable for automotive power distribution, engine control modules, and electric power steering systems requiring stable component supply across extended temperature and lifetime requirements.

Supply support for AUIRLU3110Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

AUIRLU3110Z belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V/24 V vehicle subsystems demanding ruggedness, low loss, and long-term parametric stability.

FAQ

Is AUIRLU3110Z pin-compatible with AUIRLR3110Z?

Yes-both share identical I-Pak (AUIRLU3110Z) and D-Pak (AUIRLR3110Z) footprints and pin assignments (G-S-D), but differ in thermal resistance: AUIRLU3110Z has RθJC = 1.05 °C/W (I-Pak), while AUIRLR3110Z is 1.05 °C/W in D-Pak. Mechanical mounting and PCB layout are interchangeable only within same package type.

What is the maximum recommended gate resistor for 250 kHz switching?

A 3.7 Ω gate resistor is specified in the datasheet for dynamic characterization at 250 kHz. With Qg = 48 nC and typical driver output impedance <2 Ω, this value achieves ~40 ns gate rise time while limiting ringing-confirmed in Figure 13a waveforms and AN-994 layout guidelines.

Does AUIRLU3110Z require a negative gate voltage for reliable turn-off?

No-its VGS(th) is 1.0–2.5 V and zero-temperature-coefficient threshold ensures stable turn-off at 0 V gate bias. Negative gate drive is unnecessary and not recommended, as VGS rating is only ±16 V and body diode conduction may occur if source swings negative.

Can AUIRLU3110Z be used in parallel configurations?

Yes-its positive RDS(on) temperature coefficient (Figure 10) provides inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling via shared heatsink to ensure <5 °C inter-device ΔTj at full load.

AUIRLU3110Z Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
14mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 4.5 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
3980 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
140W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK

AUIRLU3110Z FAQ

1.How can I place an order for AUIRLU3110Z through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRLU3110Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRLU3110Z reliable?

The price and inventory of AUIRLU3110Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRLU3110Z is usually 5 days.

3.What payment methods are accepted for AUIRLU3110Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRLU3110Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRLU3110Z?

AUIRLU3110Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRLU3110Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRLU3110Z?

For technical support, including AUIRLU3110Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRLU3110Z requirements.

6.How does Aetrix verify that AUIRLU3110Z is sourced from the original manufacturer or authorized distributors?

All AUIRLU3110Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRLU3110Z meets industry standards.

7.What is the process for return or replacement of AUIRLU3110Z?

All AUIRLU3110Z units undergo pre-shipment inspection (PSI). If there is an issue with AUIRLU3110Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRLU3110Z part is unused and in its original packaging.

Return procedure for AUIRLU3110Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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