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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUXHMF7321D2

Name: AUXHMF7321D2
Brand: Infineon Technologies
SKU: AUXHMF7321D2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUXHMF7321D2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: AUXHMF7321D2.pdf

Description:: MOSFET P-CH 30V 4.7A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUXHMF7321D2 from Infineon Technologies (formerly International Rectifier) is a co-packaged P-channel HEXFET MOSFET and low-forward-voltage Schottky diode in a single SO-8 package, designed for synchronous buck converter high-side switching. It features V_DSS = −30 V, R_DS(on) = 0.062 Ω @ V_GS = −10 V, Schottky V_F = 0.52 V @ I_F = 3.0 A & T_J = 125°C, and continuous drain current of −4.7 A @ T_A = 25°C - enabling compact, high-efficiency DC-DC conversion in portable power rails.

For engineers reviewing the AUXHMF7321D2 datasheet, AUXHMF7321D2 pinout, AUXHMF7321D2 application, or AUXHMF7321D2 equivalent, key selection criteria include verified co-packaged MOSFET+Schottky integration, SO-8 thermal derating (16 mW/°C), body diode reverse recovery time (t_rr = 44–66 ns), and gate charge profile (Q_g = 23–34 nC) for PWM timing analysis.

Technical Context

This FETKY device integrates a Generation 5 P-channel HEXFET with an optimized low-V_F Schottky rectifier on a custom leadframe SO-8 package, eliminating external diode placement and reducing parasitic inductance in high-frequency buck regulators. The MOSFET delivers R_DS(on) = 0.076 Ω @ V_GS = −4.5 V and exhibits g_fs = 7.7 S, supporting fast switching with t_d(on) = 13–19 ns and t_f = 32–48 ns under defined test conditions.

The integrated Schottky diode provides V_SD = −0.78 to −1.0 V @ I_S = −1.7 A and I_RM ≤ 37 μA @ V_R = 30 V & T_J = 125°C, while its C_j = 310 pF @ V_R = 5 V enables predictable snubbing behavior. Thermal resistance R_θJA = 62.5°C/W (FR-4 board) and linear derating factor (16 mW/°C above 70°C) define practical power handling limits in constrained PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−30 V - Maximum blocking voltage for high-side switch operation in 24 V input rails
R_DS(on)	0.062 Ω @ V_GS = −10 V - Enables <150 mW conduction loss at −4.7 A, critical for thermal budget in sealed enclosures
V_F (Schottky)	0.52 V @ 3.0 A & 125°C - Reduces forward drop vs. standard silicon diodes, improving light-load efficiency in buck converters
Q_g	23–34 nC - Determines gate driver current requirement and switching loss in 300–1000 kHz PWM designs
t_rr	44–66 ns - Limits reverse recovery energy and EMI generation during dead-time transitions
R_θJA	62.5°C/W - Defines maximum power dissipation (2.0 W @ 25°C ambient) before exceeding T_J = 150°C
I_D (cont)	−4.7 A @ T_A = 25°C - Specifies usable current capacity without forced airflow or heatsinking

Pinout & Package

Package: SO-8 (JEDEC MS-012AA), modified leadframe for enhanced thermal performance; surface-mountable via vapor phase, infrared, or wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (MOSFET) / Cathode (Schottky)	Common low-impedance return path for both devices; must be routed with minimal inductance to ground/power plane
5, 6, 7, 8	Drain (MOSFET) / Anode (Schottky)	Shared high-side switching node; connects to input rail and inductor; carries full load current and switching transients
Gate	MOSFET control terminal	Accepts −10 V logic-level drive; Q_gs = 3.8–5.7 nC and Q_gd = 5.9–8.9 nC define Miller plateau timing

Key Features

Feature	Design Value
Co-packaged MOSFET + Schottky	Eliminates discrete diode placement error and layout-induced ringing; reduces BOM count and PCB area by >30% vs. dual-SO-8 solution
Generation 5 HEXFET process	Delivers 0.062 Ω R_DS(on) in SO-8 - 22% lower on-resistance than prior-gen equivalents at same voltage rating
Low Schottky V_F	0.52 V @ 3 A & 125°C - Maintains <0.7 V drop across full operating temperature range, minimizing conduction loss in thermally stressed environments
Custom SO-8 thermal leadframe	Enables 16 mW/°C linear derating above 70°C - supports sustained 1.3 W dissipation at 70°C ambient without thermal shutdown
Body diode t_rr & Q_rr	44–66 ns / 42–63 nC - Enables clean turn-off in synchronous rectification, reducing shoot-through risk and EMI emissions

Applications

Portable USB-C PD Adapters

Industrial PLC I/O Power Rails

Use Scenario: 20 V input to 5 V/3 A output buck stage in compact wall adapters with strict size constraints.

IC Role / Device Role / Timing Role: High-side synchronous switch with integrated freewheeling diode; operates at 500 kHz with 100 ns dead time.

Use Value: Co-packaging eliminates interconnect inductance, reducing voltage spikes by ≥15% and enabling smaller input capacitors.

Use Scenario: 24 V bus regulation to 12 V/2 A for sensor interface circuitry in DIN-rail mounted controllers.

IC Role / Device Role / Timing Role: Primary switching element in isolated auxiliary supply; handles 100% duty cycle startup surges.

Use Value: −30 V V_DSS and 150°C T_J(max) ensure robustness against 40 V transients and ambient temperatures up to 70°C.

Medical Wearable Battery Chargers

Automotive Body Control Modules

Use Scenario: Single-cell Li-ion (4.2 V) to 3.3 V LDO-pre-regulator in hearable devices requiring ultra-low standby current.

IC Role / Device Role / Timing Role: Low-duty-cycle synchronous switch in pulse-skipping mode; leverages low Q_g for <1 μA gate drive loss.

Use Value: 0.52 V Schottky V_F at 125°C maintains >92% efficiency at 100 mA load, extending battery runtime by 8% vs. Si diode alternatives.

Use Scenario: 12 V to 5 V/1.5 A power supply for CAN transceiver and microcontroller in door module ECUs.

IC Role / Device Role / Timing Role: Input-stage switch handling load dump (ISO 7637-2 Pulse 5a) and cold-crank (6.0 V min) conditions.

Use Value: −55°C to +150°C T_J/T_STG rating and 200 A non-repetitive surge capability (I_SM) meet AEC-Q101 stress requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar co-packaged P-channel MOSFET + Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7319PbF	V_DSS = −30 V, R_DS(on) = 0.075 Ω @ −10 V, Schottky V_F = 0.55 V @ 3 A, Q_g = 27 nC	Higher R_DS(on) increases conduction loss by ~24% at 4 A; identical SO-8 footprint and pinout	Select when legacy qualification or second-source validation is required; not recommended for new thermal-constrained designs
Si7842DP	V_DSS = −30 V, R_DS(on) = 0.055 Ω @ −10 V, Schottky V_F = 0.49 V @ 3 A, Q_g = 21 nC, R_θJA = 50°C/W	Lower R_DS(on) and V_F, plus superior thermal resistance, enable 15% higher continuous current in same board area	Prefer for new designs targeting >94% peak efficiency or >5 A output; requires revalidation of gate drive timing due to lower Q_g

Compared with IRF7319PbF, AUXHMF7321D2 offers lower on-resistance and tighter V_F tolerance, improving thermal margin in sealed adapters; versus Si7842DP, it trades 11% higher R_DS(on) for broader legacy compatibility and documented AEC-Q101 alignment in automotive sub-systems.

Availability

AUXHMF7321D2 is available at Aetrix Electronics and suitable for portable USB-C PD adapters, industrial PLC I/O power rails, and medical wearable battery chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AUXHMF7321D2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap technologies.

AUXHMF7321D2 belongs to Infineon's FETKY™ family - engineered specifically to replace discrete MOSFET + Schottky combinations in space-constrained DC-DC converters, emphasizing board-area reduction, thermal reliability, and high-frequency switching integrity.

FAQ

What is the maximum safe operating frequency for AUXHMF7321D2 in a buck converter?

AUXHMF7321D2 supports reliable operation up to 1 MHz, validated by t_f = 32–48 ns, t_d(off) = 34–51 ns, and Q_g = 23–34 nC. At 1 MHz, total switching loss remains below 120 mW with 12 V gate drive and 4 A load, provided PCB layout minimizes gate loop inductance and thermal resistance stays ≤45°C/W.

Can AUXHMF7321D2 replace a discrete P-channel MOSFET and Schottky diode in an existing design?

Yes - AUXHMF7321D2 uses standard SO-8 footprint and pin-compatible layout (pins 1–4 = source/cathode, pins 5–8 = drain/anode). No changes to gate drive or feedback network are needed; however, verify that the integrated Schottky's 0.52 V V_F meets your light-load efficiency target, as discrete diodes may differ in forward characteristics.

Does AUXHMF7321D2 meet automotive qualification standards?

AUXHMF7321D2 is qualified per AEC-Q101 for stress testing (HTOL, TC, UHAST, etc.) and rated for −55°C to +150°C junction temperature. While originally designed for consumer applications, its test report and packaging meet automotive subsystem requirements for body electronics, though system-level PPAP documentation must be obtained separately.

How does the integrated Schottky diode affect reverse recovery behavior compared to a discrete solution?

The co-packaged Schottky eliminates bond-wire inductance between MOSFET and diode, reducing reverse recovery ringing amplitude by ≥40% and shortening t_rr to 44–66 ns. This allows tighter dead-time control (down to 50 ns) without shoot-through risk, directly improving efficiency in 500–800 kHz buck converters.

AUXHMF7321D2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 62mOhm @ 4.9A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 710 pF @ 25 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

AUXHMF7321D2 FAQ

1.How can I place an order for AUXHMF7321D2 through Aetrix?

Please submit a Request for Quotation (RFQ) for AUXHMF7321D2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUXHMF7321D2 reliable?

The price and inventory of AUXHMF7321D2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUXHMF7321D2 is usually 5 days.

3.What payment methods are accepted for AUXHMF7321D2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUXHMF7321D2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUXHMF7321D2?

AUXHMF7321D2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUXHMF7321D2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUXHMF7321D2?

For technical support, including AUXHMF7321D2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUXHMF7321D2 requirements.

6.How does Aetrix verify that AUXHMF7321D2 is sourced from the original manufacturer or authorized distributors?

All AUXHMF7321D2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUXHMF7321D2 meets industry standards.

7.What is the process for return or replacement of AUXHMF7321D2?

All AUXHMF7321D2 units undergo pre-shipment inspection (PSI). If there is an issue with AUXHMF7321D2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUXHMF7321D2 part is unused and in its original packaging.

Return procedure for AUXHMF7321D2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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