Diodes Incorporated B1100BQ-13-F

Overview

B1100BQ-13-F from Diodes Incorporated is a 100 V, 1.0 A high-voltage Schottky barrier rectifier in SMB package, featuring 0.79 V max forward voltage at 1.0 A and 0.5 mA max reverse leakage at rated VR, designed for polarity protection, DC-DC converters, and freewheeling applications in automotive power systems.

For engineers reviewing the B1100BQ-13-F datasheet, B1100BQ-13-F pinout, B1100BQ-13-F application, or B1100BQ-13-F equivalent, key selection criteria include peak repetitive reverse voltage (100 V), average rectified current (1.0 A), thermal resistance (25 °C/W), AEC-Q101 qualification, and SMB package compatibility with automated SMT assembly.

Technical Context

This Schottky rectifier uses guard ring die construction to enhance transient immunity and supports high-frequency switching in DC-DC and AC-DC topologies. Its low VF (0.79 V max @ 1.0 A, +25°C) and low IR (0.5 mA max @ 100 V, +25°C) reduce conduction loss and improve system efficiency.

Rated for operation from –65°C to +150°C, it delivers 30 A non-repetitive peak surge current (8.3 ms half-sine) and maintains stable performance up to +125°C terminal temperature, with total capacitance of 80 pF at 4 V reverse bias and 1 MHz.

Key Specifications

Pinout & Package

Package: SMB (Surface Mount Small Outline), molded plastic case with matte tin-plated terminals, cathode band marking, UL 94V-0 flammability rating, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with SB1100-E3/54 and SS110H, B1100BQ-13-F offers the lowest VF (0.79 V) among AEC-Q101-qualified 100 V/1 A Schottkys and guarantees full automotive change control, PPAP support, and IATF 16949 traceability.

Availability

B1100BQ-13-F is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC power supplies, and solar charge controllers requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.

Supply support for B1100BQ-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

The B170BQ–B1100BQ series targets automotive and industrial power conversion, delivering optimized Schottky performance with AEC-Q101 validation, green packaging, and robust thermal design for harsh-environment applications.

FAQ

What is the maximum junction temperature for B1100BQ-13-F?

The absolute maximum junction temperature is +150°C, with continuous operation rated up to +125°C terminal temperature. Derating curves in the datasheet show linear reduction of average forward current above +125°C, down to zero at +150°C. Thermal resistance RθJT is 25°C/W, enabling accurate junction temperature estimation under known power dissipation and PCB copper area.

Is B1100BQ-13-F suitable for use in synchronous rectification circuits?

No-B1100BQ-13-F is a passive Schottky rectifier, not a synchronous MOSFET driver or controlled switch. It functions as a unidirectional freewheeling or blocking device. For synchronous rectification, active gate-controlled MOSFETs with dedicated drivers are required; this part serves only as a low-VF alternative to standard PN diodes in non-controlled rectification paths.

Does B1100BQ-13-F have a specified reverse recovery time (trr)?

No-Schottky barrier diodes like B1100BQ-13-F are majority-carrier devices and do not exhibit minority-carrier storage delay. The datasheet omits trr because recovery is effectively instantaneous (<1 ns), making it inherently suitable for high-frequency switching (e.g., >100 kHz DC-DC) without reverse recovery loss or ringing.

Can B1100BQ-13-F replace B190BQ-13-F in an existing design?

Yes-B1100BQ-13-F shares identical SMB package, pinout, thermal characteristics, and forward voltage (0.79 V max), with only VRRM increased from 90 V to 100 V. This provides additional reverse voltage margin without layout or thermal redesign. Ensure system-level reverse voltage stress remains within 100 V, and verify no derating is needed due to higher VR in transient conditions.