Diodes Incorporated B230AQ-13-F

Overview

B230AQ-13-F from Diodes Incorporated is a 30 V, 2.0 A surface-mount Schottky barrier rectifier in SMA package, with maximum forward voltage of 0.50 V at 2.0 A and reverse leakage current ≤0.5 mA at 25°C, designed for polarity protection and freewheeling in low-voltage DC/DC converters and automotive body electronics.

For engineers reviewing the B230AQ-13-F datasheet, B230AQ-13-F pinout, B230AQ-13-F application, or B230AQ-13-F equivalent, key selection criteria include its 30 V reverse blocking rating, low VF for efficiency-critical 5–12 V rail clamping, AEC-Q101 qualification, and SMA package thermal resistance (RθJL = 25°C/W) for high-current pulse handling in space-constrained PCB layouts.

Technical Context

This Schottky rectifier uses guard ring die construction to suppress transient-induced junction breakdown and supports repetitive 50 A surge current (8.3 ms half-sine), enabling robust operation in inductive load switching circuits such as solenoid drivers and motor commutation paths.

It operates across –65°C to +150°C with RoHS-compliant matte tin plating and J-STD-020 Level 1 moisture sensitivity, making it suitable for reflow-soldered automotive modules where thermal cycling reliability and lead-free process compatibility are mandatory.

Key Specifications

Pinout & Package

SMA (DO-214AC) surface-mount package: molded plastic case, UL 94V-0 rated, cathode indicated by band on top surface; terminals are matte tin-plated for MIL-STD-202 solderability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with SB230-E3/52 and SS23HE3_A/H, B230AQ-13-F offers the lowest VF (0.50 V) among SMA-packaged 30 V/2 A Schottkys and includes AEC-Q101 qualification - critical for automotive designs where both efficiency and qualification traceability are mandatory.

Availability

B230AQ-13-F is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O protection, USB-C power delivery clamping, and DC/DC converter freewheeling requiring stable component supply and AEC-Q101 compliance.

Supply support for B230AQ-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The B230AQ-13-F belongs to Diodes' AEC-Q101-qualified Schottky rectifier product line, engineered specifically for automotive and industrial power conversion where low VF, surge robustness, and long-term reliability under thermal stress are primary design requirements.

FAQ

What is the maximum junction temperature for continuous operation?

The B230AQ-13-F has an operating junction temperature range of –65°C to +150°C. At 2.0 A continuous forward current and TA = +25°C, junction temperature rise is ~50°C (2.0 A² × RθJL = 2.0² × 25 = 100°C·W → ΔT ≈ 100°C × 0.5 for duty cycle adjustment), staying within safe limits. Derating curves in Fig. 4 confirm 1.5 A max at +100°C ambient.

Is this device suitable for synchronous rectification in a 500 kHz buck converter?

No - B230AQ-13-F is a passive Schottky rectifier, not a synchronous MOSFET driver or integrated FET. Its 200 pF capacitance (at 40 V) and lack of gate control make it unsuitable for active synchronous rectification. It functions only as a freewheel diode, with switching limited by minority carrier lifetime, not gate timing.

Does the "-13-F" suffix indicate tape-and-reel packaging and lead-free finish?

Yes. The "-13" denotes 5,000-piece tape-and-reel packaging per Diodes' ordering nomenclature, and "-F" specifies lead-free, RoHS-compliant matte tin plating on terminals, verified per MIL-STD-202 Method 208 and compliant with EU Directive 2015/863/EU (RoHS 3).

How does the guard ring construction improve reliability in automotive environments?

The guard ring mitigates electric field crowding at the silicon periphery, preventing premature avalanche breakdown during fast-rising transients like ISO 7637-2 Pulse 1 (inductive load dump). This extends device lifetime under repeated 100 V/μs stress events common in 12 V vehicle electrical systems, as validated in AEC-Q101 transient overload testing.