Taiwan Semiconductor Corporation BA159G

Overview

BA159G from Taiwan Semiconductor is a 1 A, 1000 V fast recovery rectifier diode in DO-204AL (DO-41) package, featuring 250 ns reverse recovery time, 1.2 V max forward voltage at 1 A, and 5 µA max reverse leakage at 25°C - used in high-efficiency DC-DC converters and switching inverters.

For engineers reviewing the BA159G datasheet, BA159G pinout, BA159G application, or BA159G equivalent, key selection criteria include peak reverse voltage rating (1000 V), surge current capability (30 A), thermal resistance (60 °C/W), AEC-Q101 qualification availability, and DO-41 mechanical compatibility with legacy through-hole power designs.

Technical Context

The BA159G is a single-die, glass-passivated silicon junction rectifier optimized for fast switching in medium-power SMPS and converter topologies. Its 1000 V V_RRM and 250 ns trr enable operation in 400–600 kHz flyback and forward converters where voltage margin and recovery loss are critical.

Thermally, it supports continuous 1 A conduction up to 150 °C junction temperature with 60 °C/W R_θJA, and withstands 30 A non-repetitive surge (8.3 ms half-sine). Reverse leakage remains ≤100 µA at 125 °C, supporting stable performance in automotive under-hood environments.

Key Specifications

Pinout & Package

Package: DO-204AL (DO-41), axial lead, glass-passivated die, cathode indicated by band. Lead finish: pure tin, J-STD-002 solderable. UL 94V-0 molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast recovery rectifier applications.

Compared with STTH1R06 and MUR110, the BA159G uniquely balances 1000 V capability, DO-41 through-hole compatibility, and optional AEC-Q101 qualification - making it optimal for cost-sensitive, reliability-critical 1 A rectification where voltage margin and legacy assembly are decisive.

Availability

BA159G is available at Aetrix Electronics and suitable for DC-DC converters, switching inverters, and general-purpose power rectification requiring stable component supply across industrial control, automotive subsystems, and LED lighting programs.

Supply support for BA159G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for industrial and automotive markets.

The BA159G belongs to TSC's BA15xG fast recovery rectifier family, engineered specifically for high-voltage, medium-current switching power supplies where reliability, thermal robustness, and AEC-Q101 compliance are essential.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) of the BA159G?

The BA159G has a maximum repetitive peak reverse voltage (V_RRM) of 1000 V. This rating is confirmed in the Absolute Maximum Ratings table of the official Taiwan Semiconductor datasheet (Version I2106), and defines the highest reverse voltage the BA159G can block repeatedly without breakdown under normal operating conditions.

Is the BA159G available in an AEC-Q101 qualified version?

Yes, the BA159GH variant is AEC-Q101 qualified. Per the Ordering Information section, the "H" suffix denotes AEC-Q101 qualification, and this version shares identical electrical and thermal specifications with the BA159G while meeting automotive stress-test requirements for temperature cycling, humidity, and mechanical shock.

What is the reverse recovery time (t_rr) of the BA159G, and how does it compare to BA157G and BA158G?

The BA159G has a reverse recovery time (t_rr) of 250 ns, measured at I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A. In contrast, BA157G and BA158G specify 150 ns. The longer t_rr reflects the trade-off for higher V_RRM (1000 V vs. 400 V/600 V), which increases junction capacitance and carrier lifetime.

What package type does the BA159G use, and what are its key mechanical features?

The BA159G uses the DO-204AL (DO-41) axial-leaded package. Key mechanical features include glass-passivated chip junction, pure tin-plated leads compliant with J-STD-002, UL 94V-0 flammability-rated molding compound, and cathode polarity marked by a visible band - all verified in the Mechanical Data and Package Outline sections of the datasheet.

Can the BA159G replace BA157G or BA158G in an existing design?

The BA159G can replace BA157G or BA158G only if the circuit requires ≥1000 V blocking capability and can accommodate its longer 250 ns reverse recovery time. It is mechanically compatible (same DO-41 package), but its higher V_RRM and slower t_rr may increase switching loss in high-frequency designs originally optimized for BA157G's 150 ns recovery.