Taiwan Semiconductor Corporation BA159GH

Overview

BA159GH from Taiwan Semiconductor is a 1A, 1000V fast recovery rectifier diode in DO-204AL (DO-41) package, featuring 250 ns reverse recovery time, 1.2 V max forward voltage at 1 A, and 5 µA max reverse leakage at 25°C. It serves as a primary output rectifier in high-voltage DC-DC converters for automotive power supplies.

For engineers reviewing the BA159GH datasheet, BA159GH pinout, BA159GH application, or BA159GH equivalent, key selection criteria include peak reverse voltage rating, surge current capability (30 A), thermal resistance (60 °C/W), AEC-Q101 qualification status, and DO-41 mechanical compatibility in space-constrained board layouts.

Technical Context

This discrete silicon rectifier uses a single-die, glass-passivated PN junction optimized for fast switching in high-frequency switching mode power supplies. Its 1000 V V_RRM and 250 ns t_rr enable reliable operation in flyback and forward converter topologies operating up to 100 kHz.

The device supports continuous forward current of 1 A with derating above 75°C ambient, maintains ≤5 µA reverse leakage at 25°C and ≤100 µA at 125°C, and exhibits 15 pF junction capacitance at 4 V reverse bias - critical for minimizing switching losses and EMI in high-speed rectification.

Key Specifications

Pinout & Package

Package: DO-204AL (DO-41), axial leaded, glass-passivated, RoHS- and halogen-free compliant. Cathode indicated by band on body. Leads are pure tin plated, J-STD-002 solderable.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast recovery rectifier applications.

Compared with STTH1R06 and MUR110E, BA159GH uniquely balances 1000 V blocking, AEC-Q101 compliance, and 250 ns recovery-making it optimal for cost-sensitive automotive power supplies where reliability and voltage margin outweigh ultra-fast switching needs.

Availability

BA159GH is available at Aetrix Electronics and suitable for automotive power conversion, industrial SMPS design, and renewable energy auxiliary supplies requiring stable component supply across multi-year production cycles.

Supply support for BA159GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global automotive, industrial, and consumer markets since 1979.

The BA159GH belongs to TSC's AEC-Q101-qualified fast recovery rectifier family, engineered specifically for high-voltage, high-reliability power conversion in automotive engine control, body electronics, and ADAS subsystems.

FAQ

What is the peak repetitive reverse voltage rating for BA159GH?

The BA159GH has a peak repetitive reverse voltage (V_RRM) rating of 1000 V. This specification ensures the device can reliably block reverse voltages up to 1000 V in continuous operation, making it suitable for high-voltage DC-DC stages in automotive 48 V systems and industrial power supplies. The BA159GH datasheet confirms this value under absolute maximum ratings at T_A = 25°C.

Is BA159GH qualified to AEC-Q101 standards?

Yes, BA159GH is explicitly AEC-Q101 qualified, as indicated by the "H" suffix in its ordering code. This qualification includes stress tests such as high-temperature reverse bias (HTRB), temperature cycling, and unbiased highly accelerated stress testing (UHAST), validating its suitability for automotive under-hood applications. The qualification status is documented in Taiwan Semiconductor's official BA157G–BA159G datasheet Version I2106.

What is the reverse recovery time (t_rr) of BA159GH, and how is it measured?

The BA159GH has a maximum reverse recovery time (t_rr) of 250 ns, measured under conditions of I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A. This parameter reflects the time required for the diode to transition from forward conduction to full reverse blocking. The value is specified in the Electrical Specifications table of the BA159GH datasheet and is critical for minimizing switching losses in high-frequency SMPS designs.

Does BA159GH have a specified junction-to-ambient thermal resistance?

Yes, BA159GH has a typical junction-to-ambient thermal resistance (R_θJA) of 60 °C/W, measured on a standard FR-4 PCB with minimum copper pad area. This value enables thermal performance estimation in layout design: at 1 A forward current and 1.2 V drop, power dissipation is ~1.2 W, resulting in ~72°C junction rise above ambient. The R_θJA is published in the Thermal Performance section of the BA159GH datasheet.

What packaging options are available for BA159GH?

BA159GH is supplied in DO-204AL (DO-41) package with two standard packing formats: 5,000 units per tape-and-reel (ordering code BA159GH) and 3,000 units per ammo box (ordering code BA159GHA0G). Both variants maintain identical electrical and mechanical specifications, with pure tin-plated leads compliant with J-STD-002 solderability requirements.