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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

NXP Semiconductors BAL99/DG/B2215

Name: BAL99/DG/B2215
Brand: NXP Semiconductors
SKU: BAL99/DG/B2215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAL99/DG/B2215

Manufacturer:: NXP Semiconductors

Category:: Single Diodes

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BAL99/DG/B2215.pdf

Description:: DIODE GEN PURP 80V 250MA SOT23-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,935

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Product details

Overview

BAL99/DG/B2215 from NXP Semiconductors is a high-speed switching diode in SOT23 package, with 4 ns reverse recovery time, 70 V repetitive peak reverse voltage, and 500 mA repetitive peak forward current. It serves as a fast signal-path switch in surface-mounted RF and digital logic interface circuits.

For engineers reviewing the BAL99/DG/B2215 datasheet, BAL99/DG/B2215 pinout, BAL99/DG/B2215 application, or BAL99/DG/B2215 equivalent, key selection criteria include reverse recovery time, junction-to-ambient thermal resistance, diode capacitance at zero bias, forward voltage at 10 mA, and SOT23 pin compatibility for board-level replacement.

Technical Context

The BAL99/DG/B2215 is fabricated using planar silicon technology and optimized for high-frequency signal routing where low charge storage and minimal capacitive loading are critical. Its 1.5 pF capacitance at 0 V reverse bias and 4 ns trr enable clean edge transitions in 10–100 MHz clock distribution and data line clamping.

Pin 1 is unconnected - a design feature that isolates unused terminal to reduce parasitic coupling in high-isolation applications. The cathode (Pin 2) and anode (Pin 3) configuration supports standard series-switch topology with defined polarity in compact layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	70 V - maximum repetitive reverse voltage before breakdown; defines safe operating range in 48 V telecom or 5 V logic-clamp circuits.
t_rr	4 ns - measured at I_F = 10 mA → I_R = 10 mA, R_L = 100 Ω; enables reliable operation up to ~85 MHz square-wave switching.
C_d	1.5 pF at f = 1 MHz, V_R = 0 V - low junction capacitance minimizes signal distortion in RF detector and mixer bias networks.
V_F	855 mV at I_F = 10 mA - forward drop compatible with 3.3 V and 5 V logic families without excessive power loss.
R_th(j-a)	500 K/W - thermal resistance on FR4 PCB; limits continuous I_F to 215 mA at 25 °C ambient per derating curve.
I_FRM	500 mA - peak pulsed forward current capability supports transient surge handling in ESD protection paths.

Pinout & Package

Package: SOT23 (TO-236AB), plastic surface-mounted, 3-lead, dimensions per JEDEC outline: D = 2.9 mm, E = 1.3 mm, L_p = 1.1 mm, body thickness = 0.95 mm.

Pin/Terminal	Circuit Role	Design Meaning
1	Not connected	Electrically isolated terminal; eliminates stray capacitance path and simplifies layout in high-isolation RF switches.
2	Cathode	Negative terminal for forward conduction; marked side of package aligns with cathode band for visual polarity verification.
3	Anode	Positive terminal; connects to input/source side in series-switch configuration for signal routing or clamping.

Key Features

Feature	Design Value
High-speed switching	4 ns reverse recovery time enables use in >50 MHz digital signal routing without pulse distortion.
Low junction capacitance	1.5 pF at 0 V bias reduces loading on 50 Ω transmission lines and preserves signal integrity in RF front-ends.
SOT23 footprint compatibility	Standard 3-pin SOT23 land pattern allows direct placement on existing high-density PCBs without redesign.
Thermal performance on FR4	500 K/W junction-to-ambient resistance supports 215 mA continuous current at 25 °C ambient on standard PCBs.

Applications

RF Signal Routing	Digital Logic Clamping
Use Scenario: Switching RF signals between antenna paths in 2.4 GHz ISM-band transceivers. IC Role / Device Role / Timing Role: High-speed series switch controlling signal path direction with minimal insertion loss. Use Value: 1.5 pF capacitance and 4 ns t_rr maintain impedance match and preserve rise/fall times across 100 MHz bandwidth.	Use Scenario: Clamping TTL/CMOS data lines to prevent overvoltage during hot-plug or ESD events. IC Role / Device Role / Timing Role: Fast-acting shunt clamp limiting voltage excursions to <1.25 V above rail. Use Value: 855 mV forward drop at 10 mA ensures clamping occurs below logic-high threshold while minimizing leakage.
High-Frequency Oscillator Tuning	Sample-and-Hold Input Protection
Use Scenario: Varactor-less tuning element in Colpitts oscillator feedback loop for frequency trimming. IC Role / Device Role / Timing Role: Voltage-controlled reactance via reverse-bias capacitance variation. Use Value: 1.5 pF nominal C_d with predictable voltage coefficient supports stable 10–30 MHz tuning range.	Use Scenario: Protecting ADC input pins from transient overvoltage during multiplexer channel switching. IC Role / Device Role / Timing Role: Low-capacitance guard diode placed before sample capacitor. Use Value: 1.5 pF C_d avoids degrading acquisition time; 4 ns t_rr prevents hold-mode feedthrough during fast switching.

RF Signal Routing

Digital Logic Clamping

Use Scenario: Switching RF signals between antenna paths in 2.4 GHz ISM-band transceivers.

IC Role / Device Role / Timing Role: High-speed series switch controlling signal path direction with minimal insertion loss.

Use Value: 1.5 pF capacitance and 4 ns t_rr maintain impedance match and preserve rise/fall times across 100 MHz bandwidth.

Use Scenario: Clamping TTL/CMOS data lines to prevent overvoltage during hot-plug or ESD events.

IC Role / Device Role / Timing Role: Fast-acting shunt clamp limiting voltage excursions to <1.25 V above rail.

Use Value: 855 mV forward drop at 10 mA ensures clamping occurs below logic-high threshold while minimizing leakage.

High-Frequency Oscillator Tuning

Sample-and-Hold Input Protection

Use Scenario: Varactor-less tuning element in Colpitts oscillator feedback loop for frequency trimming.

IC Role / Device Role / Timing Role: Voltage-controlled reactance via reverse-bias capacitance variation.

Use Value: 1.5 pF nominal C_d with predictable voltage coefficient supports stable 10–30 MHz tuning range.

Use Scenario: Protecting ADC input pins from transient overvoltage during multiplexer channel switching.

IC Role / Device Role / Timing Role: Low-capacitance guard diode placed before sample capacitor.

Use Value: 1.5 pF C_d avoids degrading acquisition time; 4 ns t_rr prevents hold-mode feedthrough during fast switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BAT54S,115	Dual common-cathode configuration; 3 ns t_rr; 30 V V_RRM; SOT363 package.	Requires dual-diode layout; lower voltage rating restricts use in 48 V systems.	Select when dual-channel clamping is needed and 30 V rating suffices.
1N4148W,115	Single diode; 4 ns t_rr; 100 V V_RRM; SOD-123 package; higher R_th(j-a) = 625 K/W.	Larger footprint; higher thermal resistance limits continuous current to ~150 mA on FR4.	Select when higher reverse voltage margin is required and board space permits SOD-123.

Compared with BAT54S,115 and 1N4148W,115, the BAL99/DG/B2215 offers optimal balance of 70 V rating, 4 ns speed, 1.5 pF capacitance, and SOT23 footprint-making it preferred for space-constrained, medium-voltage, high-frequency switching where single-diode topology is mandated.

Availability

BAL99/DG/B2215 is available at Aetrix Electronics and suitable for RF front-end modules, digital interface clamping circuits, and high-frequency oscillator tuning networks requiring stable component supply and consistent parametric performance across production lots.

Supply support for BAL99/DG/B2215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The BAL99/DG/B2215 belongs to NXP's discrete high-speed diode product line, engineered specifically for signal integrity preservation in RF, timing, and logic interface circuits where low capacitance and fast recovery are essential.

FAQ

What is the maximum reverse voltage rating for BAL99/DG/B2215?

The BAL99/DG/B2215 has a repetitive peak reverse voltage (V_RRM) of 70 V and a continuous reverse voltage (V_R) rating of 70 V. These values define its safe blocking capability under steady-state and repetitive surge conditions. Exceeding 70 V risks irreversible avalanche breakdown. The BAL99/DG/B2215 must be operated within this limit in all designs, including those with transient overshoot or ringing.

Does BAL99/DG/B2215 have a pin 1 connection?

No, pin 1 of the BAL99/DG/B2215 is not connected (n.c.). This is a deliberate design feature confirmed in the official NXP datasheet pinning table and schematic symbol. The terminal is electrically isolated and should remain unconnected on the PCB to avoid unintended coupling or parasitic effects. The BAL99/DG/B2215 functions correctly with only pins 2 (cathode) and 3 (anode) used.

What is the typical forward voltage of BAL99/DG/B2215 at 10 mA?

The typical forward voltage (V_F) of the BAL99/DG/B2215 is 855 mV at I_F = 10 mA and T_j = 25 °C, as specified in the Electrical Characteristics table. This value is critical for estimating conduction loss in clamping or switching paths. The BAL99/DG/B2215 maintains this low drop across its rated current range, supporting efficient operation in 3.3 V and 5 V systems.

Can BAL99/DG/B2215 be used in RF applications above 100 MHz?

Yes, the BAL99/DG/B2215 is suitable for RF applications up to approximately 100 MHz due to its 1.5 pF junction capacitance and 4 ns reverse recovery time. At higher frequencies, parasitic inductance and package limitations become dominant. For >500 MHz use, dedicated RF Schottky diodes with sub-0.5 pF C_d are recommended. The BAL99/DG/B2215 remains effective in 2.4 GHz ISM-band front-ends only as a DC bias or control switch-not as a signal-path rectifier.

What is the thermal resistance of BAL99/DG/B2215 on FR4 PCB?

The BAL99/DG/B2215 has a junction-to-ambient thermal resistance (R_th(j-a)) of 500 K/W when mounted on a standard FR4 printed-circuit board, as stated in the Thermal Characteristics section. This value governs derating: at 25 °C ambient, maximum continuous forward current is 215 mA. The BAL99/DG/B2215 must be applied within this thermal envelope to ensure reliability and avoid junction temperature exceeding 150 °C.

BAL99/DG/B2215 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Bulk

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 80 V

Current - Average Rectified (Io):: 250mA

Voltage - Forward (Vf) (Max) @ If:: 1.25 V @ 150 mA

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 4 ns

Current - Reverse Leakage @ Vr:: 1 µA @ 70 V

Capacitance @ Vr, F:: 1.5pF @ 0V, 1MHz

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

Operating Temperature - Junction:: 150°C (Max)

BAL99/DG/B2215 FAQ

1.How can I place an order for BAL99/DG/B2215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAL99/DG/B2215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAL99/DG/B2215 reliable?

The price and inventory of BAL99/DG/B2215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAL99/DG/B2215 is usually 5 days.

3.What payment methods are accepted for BAL99/DG/B2215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAL99/DG/B2215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAL99/DG/B2215?

BAL99/DG/B2215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAL99/DG/B2215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAL99/DG/B2215?

For technical support, including BAL99/DG/B2215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAL99/DG/B2215 requirements.

6.How does Aetrix verify that BAL99/DG/B2215 is sourced from the original manufacturer or authorized distributors?

All BAL99/DG/B2215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAL99/DG/B2215 meets industry standards.

7.What is the process for return or replacement of BAL99/DG/B2215?

All BAL99/DG/B2215 units undergo pre-shipment inspection (PSI). If there is an issue with BAL99/DG/B2215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAL99/DG/B2215 part is unused and in its original packaging.

Return procedure for BAL99/DG/B2215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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