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Diodes Incorporated BAS116-7-F

Part No.:
BAS116-7-F
Manufacturer:
Diodes Incorporated
Category:
Single Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBAS116-7-F.pdf
Description:
DIODE GEN PURP 85V 215MA SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:45,459

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Product details

Overview

BAS116-7-F from Diodes Incorporated is a surface-mount low-leakage silicon switching diode in SOT23 package, rated for 85 V peak repetitive reverse voltage, 215 mA forward continuous current, and exhibiting only 5.0 nA leakage at 75 V and 25°C. It serves as a precision signal-level clamp or high-impedance biasing element in analog front-ends and sensor interface circuits.

For engineers reviewing the BAS116-7-F datasheet, BAS116-7-F pinout, BAS116-7-F application, or BAS116-7-F equivalent, key selection criteria include ultra-low IR (5 nA @ 75 V), fast trr (3.0 µs), low CT (2 pF), and AEC-Q101 qualification for automotive-grade reliability in space-constrained designs.

Technical Context

The BAS116-7-F is a planar epitaxial silicon PN junction diode optimized for low-leakage operation across temperature. Its design emphasizes minimal capacitance (2 pF at 0 V) and rapid recovery (trr ≤ 3.0 µs under IF = IR = 10 mA), enabling use in high-frequency sampling hold and precision DC restoration.

Thermal performance is defined by RθJA = 500°C/W on FR-4 with 1-inch² 2 oz copper, supporting operation from –55°C to +150°C. The device uses matte tin-plated Alloy 42 leadframe and meets J-STD-020 Level 1 moisture sensitivity.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM85 V - supports blocking in 24–48 V industrial control signal paths without breakdown
IR @ 75 V, 25°C5.0 nA - enables stable biasing in nanoampere-level sensor conditioning circuits
trr3.0 µs - allows reliable operation up to ~100 kHz switching in sample-and-hold or demodulator stages
CT @ 0 V, 1 MHz2 pF - minimizes signal coupling error in RF detector and high-Z buffer applications
VF @ 10 mA1.0 V - ensures predictable forward drop in low-current logic-level clamping networks
TJ Range–55°C to +150°C - qualified for under-hood automotive and industrial power supply monitoring

Pinout & Package

Package: SOT23 - 3-terminal plastic surface-mount package with 0.915 mm nominal body width, 2.40 mm length, and 1.30 mm height; UL 94V-0 rated molded plastic housing.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Pin 1)Forward current entry pointConnected to higher-potential node in clamping or rectification path; marked by cathode band on package top view
Cathode (Pin 2)Forward current exit / reverse blocking terminalConnected to reference or lower-potential node; polarity critical for leakage-sensitive bias networks
NC / Heat Sink (Pin 3)No internal connectionUnused terminal; may be left floating or grounded for mechanical stability-no electrical function

Key Features

FeatureDesign Value
Ultra-low leakage current5.0 nA @ 75 V, 25°C - preserves accuracy in high-impedance feedback and sensor bias chains
Fast reverse recoverytrr ≤ 3.0 µs - reduces switching distortion in precision AC signal routing
Low junction capacitanceCT = 2 pF @ 0 V - maintains signal integrity in >10 MHz detector and timing circuits
AEC-Q101 qualified variant availableBAS116Q-7-F - supports automotive subsystems requiring PPAP documentation and IATF16949 traceability

Applications

Automotive Cabin Sensor InterfaceIndustrial Current-Sense Shunt Protection

Use Scenario: Monitoring microamp-level thermistor or Hall-effect sensor outputs in HVAC control modules.

IC Role / Device Role / Timing Role: Low-leakage clamp diode protecting ADC input against ESD-induced overvoltage while preserving baseline offset.

Use Value: 5 nA leakage prevents >1 mV input error in 1 MΩ source impedance paths at 25°C.

Use Scenario: Bidirectional shunt voltage protection in 4–20 mA loop transmitters.

IC Role / Device Role / Timing Role: Fast-recovery series diode limiting reverse fault current during wiring misconnection.

Use Value: 3 µs trr ensures transient suppression completes before loop controller responds to fault condition.

Medical Pulse Oximeter Front-EndTest Equipment Signal Conditioning

Use Scenario: Biasing photodiode transimpedance amplifier in portable SpO₂ sensors.

IC Role / Device Role / Timing Role: Precision DC return path with negligible leakage-induced baseline drift.

Use Value: Sub-10 nA IR avoids >0.5% gain error in 10 GΩ TIA feedback networks.

Use Scenario: Input protection for benchtop multimeter analog front-end ICs.

IC Role / Device Role / Timing Role: Low-capacitance clamp limiting overvoltage without degrading 100 kHz bandwidth.

Use Value: 2 pF CT contributes <0.02% phase shift at 100 kHz, preserving measurement fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
1N4148W-7-FHigher IR (25 nA @ 20 V), higher CT (4 pF), same SOT23 packageGeneral-purpose switching; not specified for <10 nA leakage-critical pathsSelect only when leakage <10 nA is not required and cost is primary constraint
BAS216-7-FLower VRRM (100 V), identical IR (5 nA), same trr and CTSame low-leakage performance but rated for higher reverse stress in 48 V systemsPrefer for new designs targeting 75–100 V blocking where margin matters

Compared with 1N4148W-7-F and BAS216-7-F, the BAS116-7-F uniquely balances 85 V rating, 5 nA leakage, and 2 pF capacitance-making it optimal for precision analog interfaces where all three parameters constrain system accuracy.

Availability

BAS116-7-F is available at Aetrix Electronics and suitable for automotive cabin electronics, industrial current-loop transmitters, medical sensor front-ends, and test equipment signal conditioning requiring stable component supply and full RoHS/Green compliance.

Supply support for BAS116-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAS116 belongs to Diodes' precision low-leakage diode product line, engineered specifically for high-impedance analog signal paths in automotive, industrial, and medical applications where nanoscale leakage and picofarad-level capacitance directly impact measurement integrity.

FAQ

What is the maximum operating temperature for BAS116-7-F?

The BAS116-7-F is rated for junction and storage temperatures from –55°C to +150°C. Its thermal resistance is 500°C/W on standard FR-4 PCB with 1-inch² 2 oz copper pad, allowing full-rated current derating above +25°C ambient per Figure 2 in the datasheet.

Is BAS116-7-F suitable for automotive applications?

The BAS116-7-F is not AEC-Q101 qualified; however, its automotive-grade counterpart BAS116Q-7-F is fully qualified, PPAP-capable, and manufactured in IATF16949-certified facilities. For production automotive use, BAS116Q-7-F must be selected.

How does BAS116-7-F differ from standard 1N4148 variants?

BAS116-7-F delivers 5 nA leakage at 75 V versus ≥25 nA for 1N4148W-7-F, and 2 pF capacitance versus ~4 pF. These differences make it suitable for high-impedance analog circuits where leakage-induced offset and capacitive loading degrade performance.

What is the reverse recovery time test condition for BAS116-7-F?

The specified trr of 3.0 µs is measured under IF = IR = 10 mA, Irr = 0.1 × IR, and RL = 100 Ω, per JEDEC-standard conditions. This reflects real-world behavior in active-clamp and signal-sampling circuits with moderate load impedances.

BAS116-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
85 V
Current - Average Rectified (Io):
215mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
3 µs
Current - Reverse Leakage @ Vr:
5 nA @ 75 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Operating Temperature - Junction:
-65°C ~ 150°C

BAS116-7-F FAQ

1.How can I place an order for BAS116-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS116-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS116-7-F reliable?

The price and inventory of BAS116-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116-7-F is usually 5 days.

3.What payment methods are accepted for BAS116-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS116-7-F?

BAS116-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS116-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS116-7-F?

For technical support, including BAS116-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116-7-F requirements.

6.How does Aetrix verify that BAS116-7-F is sourced from the original manufacturer or authorized distributors?

All BAS116-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116-7-F meets industry standards.

7.What is the process for return or replacement of BAS116-7-F?

All BAS116-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BAS116-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS116-7-F part is unused and in its original packaging.

Return procedure for BAS116-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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