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Nexperia USA Inc. BAS116DYX
- Part No.:
- BAS116DYX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAS116DYX.pdf
- Description:
- DIODE ARRAY GP 75V 200MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,990
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Product details
Overview
BAS116DYX from Nexperia is a low-leakage dual switching diode in SOT363-3 (TSSOP6) package, featuring 5 nA max reverse current at 75 V, 0.8 µs typical reverse recovery time, and 1 A repetitive peak forward current per diode - used in precision signal routing and low-power standby circuits where leakage-induced offset or battery drain must be minimized.
For engineers reviewing the BAS116DYX datasheet, BAS116DYX pinout, BAS116DYX application, or BAS116DYX equivalent, this page delivers verified electrical parameters, validated dual-diode terminal mapping, thermal derating curves, and direct-fit alternatives for surface-mount low-leakage switching designs.
Technical Context
The BAS116DYX integrates two electrically isolated epitaxial silicon diodes in a single 6-pin TSSOP package, with pins 2 and 5 internally unconnected to enable independent biasing of each diode pair. Its medium-speed switching performance is optimized for <1 µs transition times under 10 mA IF/IR conditions.
Thermal resistance is specified at 475 K/W junction-to-ambient on FR4 PCB with standard footprint, and maximum junction temperature is rated to 150 °C - supporting operation in thermally constrained portable and industrial control modules without forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse leakage | 5 nA max at VR = 75 V, pulsed, 25 °C - enables microamp-level standby current budgets in battery-backed sensors. |
| Reverse recovery time | 0.8 µs typical (IF = 10 mA, IR = 10 mA, RL = 100 Ω) - supports clean signal edge integrity up to ~500 kHz switching. |
| Repetitive peak reverse voltage | 85 V - allows use in 24 V and 48 V industrial bus interfaces with margin against transients. |
| Forward voltage | 1.25 V max at IF = 150 mA, 25 °C - minimizes conduction loss in low-current logic-level clamping paths. |
| Diode capacitance | 2 pF typical at VR = 0 V, f = 1 MHz - preserves high-frequency signal fidelity in RF detector or sampling applications. |
| Total power dissipation | 270 mW max at Tamb ≤ 25 °C - defines safe DC or pulsed loading limits on standard FR4 layouts. |
Pinout & Package
Package: SOT363-3 (TSSOP6), 6-lead surface-mount plastic package with 0.65 mm pitch, 2.2 mm × 1.35 mm body size, and exposed pad not present.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | A1 | Anode of Diode 1 - connects to positive-side signal source in discrete clamp or OR-ing path. |
| 2 | n.c. | No connection - electrically isolated; no internal bond wire or die attachment. |
| 3 | K2 | Cathode of Diode 2 - referenced to common return or lower-potential rail in dual-path isolation. |
| 4 | A2 | Anode of Diode 2 - enables independent forward biasing separate from Diode 1. |
| 5 | n.c. | No connection - electrically isolated; no internal bond wire or die attachment. |
| 6 | K1 | Cathode of Diode 1 - forms complete first diode path with Pin 1; shared cathode routing not supported. |
Key Features
| Feature | Design Value |
|---|---|
| Low leakage current | 5 nA max at 75 V reverse bias - reduces parasitic discharge in high-impedance sample-and-hold or sensor bias networks. |
| Electrically isolated dual diodes | Independent anode–cathode pairs (A1/K1 and A2/K2) with no shared terminals - enables true dual-channel signal steering without crosstalk. |
| Medium-speed switching | 0.8 µs trr typical - balances speed and low capacitance for non-RF but timing-critical functions like level translation or pulse shaping. |
| Thermal robustness | 150 °C max junction temperature and 475 K/W Rth(j-a) - sustains continuous operation in sealed enclosures with ambient up to 105 °C. |
Applications
| Signal-Level Clamping | Low-Power Standby Switching |
|---|---|
|
Use Scenario: Protecting ADC inputs from overvoltage transients in data acquisition systems using passive diode clamps tied to reference rails. IC Role / Device Role / Timing Role: Discrete clamping diode providing fast turn-on (<1.25 V VF) and sub-5 nA leakage to preserve input impedance above 10 GΩ. Use Value: Prevents ADC saturation without loading high-Z sensor outputs or introducing measurable offset drift during idle periods. |
Use Scenario: Isolating backup battery supply from main power rail in real-time clock (RTC) modules during system power-down. IC Role / Device Role / Timing Role: Dual-diode OR-ing switch enabling automatic source selection with <5 nA reverse leakage to extend coin-cell life beyond 10 years. Use Value: Eliminates need for external MOSFET controllers while maintaining nanoscale quiescent current in always-on subsystems. |
| Dual-Channel Logic-Level Translation | High-Voltage Signal Routing |
|
Use Scenario: Bidirectional level shifting between 1.8 V microcontroller GPIOs and 3.3 V peripheral I/Os using back-to-back diode configurations. IC Role / Device Role / Timing Role: Paired diodes (A1/K1 + A2/K2) configured as passive translators with matched VF and trr across both channels. Use Value: Achieves <100 ns propagation delay asymmetry and avoids latch-up risk inherent in active translators. |
Use Scenario: Routing analog trigger signals from 48 V industrial PLC outputs to 3.3 V microcontroller interrupt pins via voltage divider + clamp network. IC Role / Device Role / Timing Role: Low-capacitance (2 pF) dual diode providing ESD-safe clamping and transient suppression without distorting fast edge rates. Use Value: Maintains signal rise time <5 ns while blocking >85 V transients - critical for deterministic interrupt latency in motion control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage dual switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR20F40NXT5G | Higher leakage (100 nA @ 75 V), faster trr (0.4 µs), same SOT363-3 package | Better for higher-frequency switching (>1 MHz), less suitable for ultra-low-quiescent systems | Select when speed outweighs leakage budget; verify thermal impact of higher VF (1.3 V) |
| Diodes Inc. DMMT3904-7-F | Single NPN transistor in SOT363; not functionally equivalent - requires external diode implementation | Not a drop-in replacement; used only when discrete transistor-based switching is acceptable | Only consider if redesign permits adding external diodes; increases BOM count and layout area |
Compared with NSR20F40NXT5G and DMMT3904-7-F, the BAS116DYX uniquely delivers sub-5 nA leakage in a true dual-diode configuration - making it irreplaceable in multi-rail battery monitoring, medical sensor front-ends, and energy-harvesting harvesters where nanoamp-level integrity is non-negotiable.
Availability
BAS116DYX is available at Aetrix Electronics and suitable for precision analog signal conditioning, battery-powered IoT node design, and industrial PLC I/O protection requiring stable component supply and long-term manufacturability.
Supply support for BAS116DYX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The BAS116DYX belongs to Nexperia's low-leakage switching diode product line, engineered specifically for applications demanding nanoscale reverse current control and predictable medium-speed switching in space-constrained SMD layouts.
FAQ
What is the maximum continuous forward current per diode at 70 °C ambient?
At Tamb = 70 °C, the maximum continuous forward current per diode is approximately 120 mA, derived from Fig. 1 in the datasheet showing linear derating from 200 mA at 25 °C to 0 mA at 150 °C on FR4 PCB with standard footprint. This value assumes single-diode operation and natural convection cooling.
Are pins 2 and 5 internally connected or truly open?
Pins 2 and 5 are confirmed as unconnected (n.c.) with no internal bond wires or die connections - verified by Nexperia's official package drawing (Fig. 7) and pinning table. They must remain unpopulated or left floating in PCB layout; soldering them provides no electrical benefit and risks mechanical stress.
Can BAS116DYX replace BAS16 in existing designs?
No - BAS16 is a single-diode SOT23 device with different pinout, 100 nA leakage, and 4 ns trr. BAS116DYX offers dual diodes in SOT363-3 with 5 nA leakage and 0.8 µs trr, making it incompatible for pin-for-pin substitution. Redesign is required to accommodate the 6-pin layout and dual functionality.
Does BAS116DYX support wave soldering?
Yes - Nexperia specifies wave soldering compatibility for SOT363-3 in Fig. 9 of the datasheet, with defined footprint dimensions (5.3 mm × 2.45 mm) and preferred transport direction. Peak temperature must not exceed 260 °C for ≤5 s, and flux residue must be compatible with FR4 and tin-plated copper.
BAS116DYX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io) (per Diode):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAS116DYX FAQ
1.How can I place an order for BAS116DYX through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS116DYX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS116DYX reliable?
The price and inventory of BAS116DYX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116DYX is usually 5 days.
3.What payment methods are accepted for BAS116DYX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116DYX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS116DYX?
BAS116DYX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS116DYX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS116DYX?
For technical support, including BAS116DYX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116DYX requirements.
6.How does Aetrix verify that BAS116DYX is sourced from the original manufacturer or authorized distributors?
All BAS116DYX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116DYX meets industry standards.
7.What is the process for return or replacement of BAS116DYX?
All BAS116DYX units undergo pre-shipment inspection (PSI). If there is an issue with BAS116DYX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS116DYX part is unused and in its original packaging.
Return procedure for BAS116DYX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS116DYX Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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