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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Nexperia USA Inc. BAS116GW

Name: BAS116GW
Brand: Nexperia USA Inc.
SKU: BAS116GW
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAS116GW

Manufacturer:: Nexperia USA Inc.

Category:: Single Diodes

Package:: SOD-123

Datasheet:: BAS116GW.pdf

Description:: DIODE GEN PURP 75V 215MA SOD123

Quantity:: RFQ Add To RFQ list

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Inventory:15,000

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Product details

Overview

BAS116GW from Nexperia is a high-speed switching diode in SOD-123W package, with 100 V peak reverse voltage (V_RWM), 215 mA average forward current (I_F), and 4 ns reverse recovery time (t_rr), used in signal clamping and high-frequency rectification in consumer power supplies.

For engineers reviewing the BAS116GW datasheet, BAS116GW pinout, BAS116GW application, or BAS116GW equivalent, key selection criteria include reverse recovery speed, surge current capability (I_FSM = 4 A), low forward voltage drop (V_F = 1.25 V @ 150 mA), and thermal resistance (R_thj-a = 370 K/W).

Technical Context

The BAS116GW is a planar epitaxial silicon switching diode optimized for fast transient response. Its low t_rr and soft recovery characteristic minimize EMI generation during commutation in DC-DC converters and LED drivers.

It operates with a maximum junction temperature of 150 °C and exhibits a typical capacitance of 2.5 pF at 0 V, supporting RF signal routing and high-frequency detector applications where low parasitic capacitance is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RWM	100 V - supports input rectification in 24–48 V industrial power rails without breakdown
I_F (avg)	215 mA - sufficient for low-power logic-level signal steering and bias networks
t_rr	4 ns - enables operation up to ~100 MHz switching frequencies in pulse shaping circuits
V_F @ 150 mA	1.25 V - reduces conduction loss in series-clamp protection paths
I_FSM	4 A - withstands short-duration inrush currents in hot-swap and load-switching circuits
R_thj-a	370 K/W - requires minimal PCB copper area for thermal management in space-constrained layouts

Pinout & Package

Package: SOD-123W - surface-mount plastic package with gull-wing leads, 2.7 mm × 1.7 mm footprint, 1.25 mm height, rated for reflow soldering per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Anode (A)	Forward current entry point	Connected to higher-potential node in clamping or rectifier configuration
Cathode (K)	Forward current exit point / reverse-blocking terminal	Typically tied to reference rail (e.g., GND or V_CC) for unidirectional signal control

Key Features

Feature	Design Value
Ultra-fast switching	t_rr = 4 ns - enables clean edge preservation in digital signal conditioning
Low leakage current	I_R = 100 nA @ 100 V - maintains signal integrity in high-impedance sample-and-hold paths
Soft recovery characteristic	Minimizes voltage overshoot and ringing during turn-off - reduces need for snubber networks
Qualified to AEC-Q101	Validated for automotive under-hood temperature cycling and humidity testing

Applications

USB Port ESD Protection

Automotive CAN Bus Signal Clamping

Use Scenario: Bidirectional transient suppression on USB 2.0 D+/D− lines against IEC 61000-4-2 contact discharge.

IC Role / Device Role / Timing Role: Discrete clamping diode placed between data line and V_CC/GND rails to shunt ESD energy.

Use Value: 4 ns t_rr prevents latch-up during fast transients; 100 nA I_R avoids signal loading on 90 Ω differential pair.

Use Scenario: Voltage limiting on CAN_H/CAN_L nodes in 12 V vehicle body control modules.

IC Role / Device Role / Timing Role: Standalone clamp protecting transceiver inputs from load-dump and jump-start surges.

Use Value: 100 V V_RWM accommodates ISO 7637-2 Pulse 5a (76 V); AEC-Q101 qualification ensures reliability over 15-year service life.

High-Frequency Detector in RF Front-End

Low-Power Logic-Level Translation

Use Scenario: AM envelope detection in sub-GHz ISM band receivers (e.g., 315/433 MHz remote keyless entry).

IC Role / Device Role / Timing Role: Passive demodulator converting RF carrier amplitude to baseband voltage.

Use Value: 2.5 pF junction capacitance preserves Q-factor of matching network; low V_F improves detection sensitivity at µW input levels.

Use Scenario: Level shifting between 3.3 V microcontroller GPIO and 5 V peripheral enable lines.

IC Role / Device Role / Timing Role: Forward-biased diode providing ~1.25 V offset to translate logic thresholds.

Use Value: 4 ns t_rr ensures no timing skew in 10 MHz toggle scenarios; SOD-123W footprint allows placement adjacent to BGA packages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BAS16W	V_RWM = 80 V, t_rr = 4 ns, I_F = 215 mA - lower reverse voltage rating	Not suitable for 100 V surge-prone automotive loads	Select when system max reverse stress ≤80 V and cost sensitivity outweighs margin needs
1N4148W	V_RWM = 100 V, t_rr = 4 ns, but I_F = 300 mA and R_thj-a = 400 K/W - higher current, worse thermal performance	Preferred in higher-current analog switches; less optimal in thermally dense layouts	Choose for legacy designs requiring direct 1N4148 form factor compatibility

Compared with BAS116GW, BAS16W trades reverse voltage margin for slightly lower cost, while 1N4148W offers higher I_F at the expense of thermal efficiency-making BAS116GW optimal for space-constrained, 100 V-rated, thermally sensitive signal-path applications.

Availability

BAS116GW is available at Aetrix Electronics and suitable for USB interface protection, automotive CAN bus clamping, and RF detector circuits requiring stable component supply across production ramp and long-lifecycle programs.

Supply support for BAS116GW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard logic and discrete components, with manufacturing sites in Europe and Asia.

The BAS116GW belongs to Nexperia's high-speed switching diode product line, engineered specifically for ESD-critical signal routing and fast-switching power management in automotive and industrial systems.

FAQ

Is BAS116GW suitable for bidirectional ESD protection?

No. BAS116GW is a unidirectional diode with anode and cathode terminals. For bidirectional ESD protection, paired BAS116GW devices or purpose-built TVS diodes like PESD5V0S1BA must be used in back-to-back configuration or as specified in IEC 61000-4-2 compliant designs.

What is the maximum operating frequency for BAS116GW in clipping applications?

The BAS116GW supports reliable operation up to approximately 100 MHz in clipping and clamping roles, based on its 4 ns reverse recovery time and 2.5 pF junction capacitance. Performance beyond this depends on PCB layout parasitics and drive source impedance, not intrinsic device limits.

Does BAS116GW require derating at elevated ambient temperatures?

Yes. At 100 °C ambient, the average forward current must be reduced to 130 mA to maintain junction temperature ≤150 °C, per the derating curve in Nexperia's datasheet (document number BAS116GW_Nexperia.pdf, section 6.2). Thermal vias under the cathode pad improve margin.

Can BAS116GW replace BAT54 in low-voltage Schottky applications?

No. BAS116GW is a silicon switching diode with V_F ≈ 1.25 V; BAT54 is a Schottky diode with V_F ≈ 0.3 V. Substituting BAS116GW would increase conduction loss and reduce efficiency in 3.3 V or lower rail applications where low forward drop is essential.

BAS116GW Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOD-123

Packaging:: Bulk

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 75 V

Current - Average Rectified (Io):: 215mA

Voltage - Forward (Vf) (Max) @ If:: 1.25 V @ 150 mA

Speed:: Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 3 µs

Current - Reverse Leakage @ Vr:: 5 nA @ 75 V

Capacitance @ Vr, F:: 2pF @ 0V, 1MHz

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOD-123

Operating Temperature - Junction:: 150°C (Max)

BAS116GW FAQ

1.How can I place an order for BAS116GW through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS116GW on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS116GW reliable?

The price and inventory of BAS116GW are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116GW is usually 5 days.

3.What payment methods are accepted for BAS116GW?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116GW transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS116GW?

BAS116GW orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS116GW order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS116GW?

For technical support, including BAS116GW datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116GW requirements.

6.How does Aetrix verify that BAS116GW is sourced from the original manufacturer or authorized distributors?

All BAS116GW products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116GW meets industry standards.

7.What is the process for return or replacement of BAS116GW?

All BAS116GW units undergo pre-shipment inspection (PSI). If there is an issue with BAS116GW, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS116GW part is unused and in its original packaging.

Return procedure for BAS116GW:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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