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Nexperia USA Inc. BAS116GWJ
- Part No.:
- BAS116GWJ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- SOD-123
- Datasheet:
-
BAS116GWJ.pdf
- Description:
- DIODE GEN PURP 75V 215MA SOD123
- Quantity:
- Payment:
- Shipping:
Inventory:4,604
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Product details
Overview
BAS116GWJ from Nexperia is a low-leakage switching diode in SOD123 package, designed for high-speed signal routing and precision biasing where sub-nA reverse current is critical. Confirmed parameters: 85 V repetitive peak reverse voltage (VRRM), 0.8 µs typical reverse recovery time (trr), 2 pF capacitance at 1 MHz, 3 pA typical IR at 75 V/25 °C, and AEC-Q101 qualification for automotive use.
For engineers reviewing the BAS116GWJ datasheet, BAS116GWJ pinout, BAS116GWJ application, or BAS116GWJ equivalent, key selection criteria include ultra-low leakage in sensor front-ends, fast trr in sample-and-hold circuits, thermal resistance limits under pulsed load, and SOD123 footprint compatibility with space-constrained PCB layouts.
Technical Context
The BAS116GWJ operates as a single-junction silicon planar switching diode with optimized doping and geometry to minimize minority-carrier storage, enabling its 0.8 µs trr at IF = 10 mA / IR = 10 mA test conditions. Its 3 pA IR at VR = 75 V reflects tight process control for leakage-sensitive analog signal paths.
Thermal design relies on junction-to-ambient resistance of 350 K/W (FR4, standard footprint) and 210 K/W (cathode pad enhanced), with maximum junction temperature rated at 150 °C. The device supports pulsed forward currents up to 4 A for 1 µs, constrained by transient thermal impedance curves.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 85 V - Maximum reverse voltage before breakdown; defines safe operating range in clamping or blocking applications |
| trr | 0.8 µs typ - Enables >1 MHz switching in sample-and-hold or demodulator circuits without tail current distortion |
| IR | 3 pA typ @ 75 V/25 °C - Ensures minimal DC error in high-impedance sensor bias networks and precision reference dividers |
| Cd | 2 pF @ 0 V/1 MHz - Limits capacitive loading on RF detector outputs and high-frequency logic inputs |
| VF | 1.25 V max @ 150 mA - Defines forward conduction loss and self-heating under sustained current in power management blocks |
| Ptot | 600 mW - Sets maximum continuous power dissipation on FR4 PCB with cathode pad enhancement |
| Tj max | 150 °C - Junction temperature limit governing reliability in under-hood automotive modules |
Pinout & Package
Encapsulated in SOD123 surface-mount plastic package (3.75 × 2.55 × 1.3 mm), with standardized cathode tab and anode lead spacing per IEC 60747-16.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K) | Cathode | Negative terminal; connects to lower-potential node; solder pad must match 1 cm² copper area for Rth(j-sp) = 58 K/W |
| 2 (A) | Anode | Positive terminal; carries forward current; requires controlled reflow profile per Figure 9 footprint |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low leakage | 3 pA IR at 75 V enables stable bias in photodiode amplifiers and high-Z voltage references |
| Fast recovery | 0.8 µs trr supports clean edge transitions in 1–2 MHz clocked analog switches and multiplexers |
| AEC-Q101 qualified | Validated for automotive ambient temperature range (−40 °C to +150 °C) and mechanical stress requirements |
| Low capacitance | 2 pF Cd minimizes signal attenuation and phase shift in RF detector and IF filter interfaces |
| SOD123 footprint | Standardized 2-lead package compatible with automated placement and reflow processes on high-density PCBs |
Applications
| Automotive Cabin Sensors | Medical Instrument Front-Ends |
|---|---|
Use Scenario: Precision current-to-voltage conversion in MEMS pressure sensors inside HVAC control modules. IC Role / Device Role / Timing Role: Signal-path blocking diode isolating reference voltage from transducer bias network. Use Value: 3 pA IR prevents drift in 10 GΩ feedback paths; 2 pF Cd avoids resonance with op-amp input capacitance. | Use Scenario: Low-noise signal conditioning in portable ECG electrode interfaces. IC Role / Device Role / Timing Role: Protection and level-shifting diode in ultra-high-impedance biopotential amplifier input stage. Use Value: Sub-pA leakage preserves common-mode rejection; 0.8 µs trr ensures no artifact injection during 1 kHz sampling. |
| Industrial Process Analyzers | Test & Measurement Equipment |
Use Scenario: Reference voltage divider stabilization in pH meter analog front-ends exposed to humid environments. IC Role / Device Role / Timing Role: Leakage-suppressing clamp diode across high-value resistor string. Use Value: 3 pA IR maintains <0.1% gain error over 10-year calibration interval; AEC-Q101 grade ensures long-term parametric stability. | Use Scenario: Fast-settling multiplexer channel isolation in 6½-digit DMM input protection circuits. IC Role / Device Role / Timing Role: High-speed switching element routing guarded analog signals between measurement ranges. Use Value: 0.8 µs trr enables <1 µs channel settling; SOD123 size allows dense layout of 16-channel analog switch matrix. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS1C200MZ4T1G | VRRM = 200 V, IR = 100 pA @ 100 V, trr = 4 ns, SOD-123FL package | Higher voltage rating but 33× higher leakage; faster trr but tighter layout tolerance due to flange | Select when >100 V blocking required and leakage budget allows ≥100 pA; verify thermal relief for flange mounting |
| Vishay ES1J | VRRM = 600 V, IR = 5 µA @ 600 V, trr = 35 ns, DO-214AC package | High-voltage general-purpose part; leakage 1.6 million× higher; unsuitable for precision biasing | Only acceptable if leakage is irrelevant and high-voltage surge suppression dominates design priority |
Compared with BAS116GWJ, NSS1C200MZ4T1G trades ultra-low leakage for higher voltage and nanosecond speed-ideal for HV logic clamping but not sensor biasing-while ES1J serves robust power-line protection, not signal integrity-critical paths.
Availability
BAS116GWJ is available at Aetrix Electronics and suitable for automotive cabin sensors, medical instrument front-ends, and industrial process analyzers requiring stable component supply with guaranteed long-term availability and traceable sourcing.
Supply support for BAS116GWJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade components and advanced packaging technologies.
The BAS116GWJ belongs to Nexperia's AEC-Q101-qualified low-leakage switching diode product line, engineered specifically for precision analog signal conditioning in harsh-environment automotive and medical systems where sub-nA leakage and thermal stability are non-negotiable.
FAQ
What is the maximum reverse voltage the BAS116GWJ can withstand continuously?
The BAS116GWJ has a repetitive peak reverse voltage (VRRM) rating of 85 V, meaning it can block up to 85 V in repeated AC or pulsed reverse-bias conditions without breakdown. Its DC reverse voltage rating (VR) is 75 V at 25 °C ambient, verified per IEC 60134 limiting values. Exceeding these values risks permanent junction damage.
How does the 3 pA leakage current impact circuit accuracy in high-impedance applications?
At 3 pA typical IR, the BAS116GWJ introduces less than 3 µV error across a 1 MΩ resistor and negligible offset in 10 GΩ transimpedance amplifier feedback paths. This enables stable operation in photodiode preamps and precision voltage references where even 100 pA leakage would cause measurable drift or calibration drift over time.
Is the BAS116GWJ suitable for reflow soldering on standard FR4 PCBs?
Yes-the BAS116GWJ in SOD123 package is qualified for lead-free reflow per J-STD-020. Figure 9 specifies the exact solder paste stencil and copper land pattern (2.36 mm × 1.11 mm pad, 0.81 mm solder mask opening) required to achieve reliable joint formation and maintain thermal resistance specs on standard FR4 boards.
Does AEC-Q101 qualification cover both temperature cycling and mechanical shock testing?
Yes-AEC-Q101 qualification for BAS116GWJ includes full stress testing per the Automotive Electronics Council standard: temperature cycling (−40 °C to +150 °C, 1000 cycles), mechanical shock (3000 g), vibration, and highly accelerated life testing (HAST). These tests validate reliability for under-hood and dashboard-mounted automotive modules.
BAS116GWJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOD-123
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 215mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123
- Operating Temperature - Junction:
- 150°C (Max)
BAS116GWJ FAQ
1.How can I place an order for BAS116GWJ through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS116GWJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS116GWJ reliable?
The price and inventory of BAS116GWJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116GWJ is usually 5 days.
3.What payment methods are accepted for BAS116GWJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116GWJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS116GWJ?
BAS116GWJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS116GWJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS116GWJ?
For technical support, including BAS116GWJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116GWJ requirements.
6.How does Aetrix verify that BAS116GWJ is sourced from the original manufacturer or authorized distributors?
All BAS116GWJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116GWJ meets industry standards.
7.What is the process for return or replacement of BAS116GWJ?
All BAS116GWJ units undergo pre-shipment inspection (PSI). If there is an issue with BAS116GWJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS116GWJ part is unused and in its original packaging.
Return procedure for BAS116GWJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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