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Nexperia USA Inc. BAS116GWX

Part No.:
BAS116GWX
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
SOD-123
Datasheet:
AetrixBAS116GWX.pdf
Description:
DIODE GEN PURP 75V 215MA SOD123
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,322

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Product details

Overview

BAS116GWX from Nexperia is a low-leakage switching diode in SOD123 package, designed for precision signal routing and voltage clamping where ultra-low reverse current (3 pA typ. at 75 V, 25 °C) and fast recovery (0.8 µs typ.) are critical. It supports repetitive peak reverse voltage up to 85 V, forward current to 215 mA, and operates across −55 °C to +150 °C junction temperature - used in automotive sensor biasing and high-impedance analog front-ends.

For engineers reviewing the BAS116GWX datasheet, BAS116GWX pinout, BAS116GWX application, or BAS116GWX equivalent, key selection criteria include verified leakage performance at elevated temperature, AEC-Q101 qualification status, SOD123 thermal resistance (210 K/W junction-to-solder point), and compatibility with reflow/wave soldering footprints per IPC-7351.

Technical Context

This discrete silicon switching diode uses planar epitaxial construction to achieve sub-nA reverse leakage and controlled minority-carrier lifetime for predictable trr behavior. Its 2 pF capacitance at 0 V and 1 MHz enables minimal signal distortion in RF sampling and high-frequency detector circuits.

The device is fully characterized per IEC 60134 absolute maximum ratings, with thermal design validated on FR4 PCBs using standard and enhanced cathode-pad footprints. Junction-to-ambient Rth(j-a) is 350 K/W (standard) and 210 K/W (enhanced pad), directly supporting power derating in compact automotive modules.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 85 V - Maximum repetitive reverse blocking voltage without breakdown; defines safe operating range in clamp/protection circuits.
IR @ VR = 75 V, 25 °C 3 pA typ. - Enables stable DC bias in >1 GΩ impedance nodes (e.g., photodiode transimpedance amplifiers).
trr 0.8 µs typ. - Supports switching frequencies up to ~500 kHz with minimal tail current in flyback snubbers and sample-hold paths.
Cd @ VR = 0 V, 1 MHz 2 pF - Limits capacitive loading on high-speed logic inputs and preserves bandwidth in RF detector outputs.
VF @ IF = 150 mA 1.25 V max - Ensures low conduction loss in low-duty-cycle pulse applications such as LED strobing and gate drive isolation.
Ptot 600 mW - Specifies maximum steady-state dissipation on FR4 with 1 cm² cathode pad; requires thermal layout verification.
AEC-Q101 qualified Qualified for automotive use - meets stress test requirements for temperature cycling, HTRB, and ESD (HBM ≥ 8 kV).

Pinout & Package

Encapsulated in SOD123 surface-mount plastic package (3.75 × 2.55 × 1.3 mm), with standardized cathode marking (GB) and defined solder land geometry per IPC-7351.

Pin/Terminal Circuit Role Design Meaning
1 (K) Cathode Connected to higher-potential node during reverse bias; carries full forward current; primary thermal path to PCB via cathode pad.
2 (A) Anode Connected to lower-potential node during conduction; electrically isolated from thermal pad; defines polarity in series-switching configurations.

Key Features

Feature Design Value
Low leakage current 3 pA typical at 75 V, 25 °C - maintains accuracy in high-impedance feedback networks and sensor biasing without drift.
Fast reverse recovery 0.8 µs typical - reduces switching losses and prevents shoot-through in synchronous rectifier and charge-pump topologies.
Small SMD footprint SOD123 outline (3.75 × 2.55 mm) - enables dense placement in space-constrained automotive ECUs and portable instrumentation.
AEC-Q101 qualification Validated for automotive grade-1 (−40 °C to +125 °C ambient) operation - ensures reliability in engine control, ADAS, and body electronics.
Low diode capacitance 2 pF at 0 V - minimizes signal coupling and phase shift in RF detector and high-speed comparator input protection.

Applications

Automotive Sensor Biasing High-Impedance Analog Front-End Protection

Use Scenario: Providing stable reverse-biased bias to piezoresistive pressure sensors in engine manifolds.

IC Role / Device Role / Timing Role: Precision leakage-controlled voltage clamp that isolates sensor output from supply rail transients.

Use Value: Prevents <100 fA error currents from corrupting 16-bit ADC readings under hot-cranking conditions (Tj = 150 °C).

Use Scenario: Protecting op-amp inputs in medical EEG amplifiers against ESD and overvoltage events.

IC Role / Device Role / Timing Role: Low-capacitance, low-leakage steering diode in rail-to-rail input protection network.

Use Value: Maintains >10 GΩ input impedance while limiting transient energy with <2 pF parasitic capacitance.

Sample-and-Hold Circuit Clamping Low-Duty-Cycle LED Strobing

Use Scenario: Clamping hold capacitor voltage during acquisition phase in precision data acquisition systems.

IC Role / Device Role / Timing Role: Fast-recovery switch that blocks leakage-induced droop between sampling intervals.

Use Value: Limits voltage decay to <10 µV/s at 10 nF hold capacitance, enabling >18-bit effective resolution.

Use Scenario: Isolating microcontroller GPIO pins driving high-brightness LEDs in automotive interior lighting.

IC Role / Device Role / Timing Role: Series switching diode controlling current path during PWM dimming pulses.

Use Value: Delivers 150 mA peak current with <1.25 V forward drop and negligible thermal rise at 1% duty cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage switching diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS1C200LT1G Higher IR (5 nA typ. @ 75 V) and slower trr (3.5 µs typ.), same SOD-123 package. Acceptable in non-precision biasing but unsuitable for >14-bit measurement front-ends. Select when cost sensitivity outweighs leakage-critical performance; verify thermal margin at 150 °C.
Vishay ES1J Higher VRRM (600 V) but significantly higher IR (100 nA) and Cd (30 pF); DO-214AC package. Used in AC line rectification, not low-leakage analog signal paths. Only consider for high-voltage, non-precision switching; incompatible footprint and leakage spec.

Compared with NSS1C200LT1G and ES1J, BAS116GWX uniquely balances ultra-low leakage (3 pA), fast recovery (0.8 µs), and SOD123 size - making it the only option qualified for AEC-Q101 and specified for high-resolution sensor interfaces requiring sub-pA stability.

Availability

BAS116GWX is available at Aetrix Electronics and suitable for automotive sensor modules, high-impedance medical instrumentation, precision data acquisition systems, and industrial IoT edge nodes requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for BAS116GWX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.

BAS116GWX belongs to Nexperia's AEC-Q101-qualified low-leakage diode family, engineered specifically for precision analog signal conditioning and automotive-grade sensor interface applications demanding long-term parametric stability.

FAQ

What is the maximum junction temperature rating for BAS116GWX?

The absolute maximum junction temperature is 150 °C, validated per IEC 60134. Operation at this limit requires thermal design with the enhanced cathode pad footprint (Rth(j-sp) = 210 K/W) and derating of Ptot to ≤357 mW on standard FR4. Continuous operation above 125 °C requires validation of leakage drift per Figure 4.

Is BAS116GWX suitable for bidirectional ESD protection?

No - BAS116GWX is a unidirectional switching diode with anode-cathode polarity. It provides reverse-bias clamping only. For bidirectional ESD protection, dedicated TVS diodes like PESD5V0S1BA (SOD-323) or dual-rail arrays must be used instead.

How does the 3 pA leakage specification scale at elevated temperature?

Per Figure 4, typical IR increases to 3 nA at 150 °C and 75 V. This 1000× increase is inherent to silicon physics and must be accounted for in high-temperature bias networks - e.g., a 10 MΩ feedback resistor will develop 30 mV offset at 150 °C.

Can BAS116GWX replace BAS216 in existing designs?

No - BAS216 has higher VRRM (100 V) and different trr (4 ns), but significantly higher IR (100 nA). Substituting BAS116GWX would reduce leakage by >30× but compromise reverse voltage margin and high-speed switching capability, requiring circuit revalidation.

BAS116GWX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SOD-123
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
75 V
Current - Average Rectified (Io):
215mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
3 µs
Current - Reverse Leakage @ Vr:
5 nA @ 75 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-123
Operating Temperature - Junction:
150°C (Max)

BAS116GWX FAQ

1.How can I place an order for BAS116GWX through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS116GWX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS116GWX reliable?

The price and inventory of BAS116GWX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116GWX is usually 5 days.

3.What payment methods are accepted for BAS116GWX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116GWX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS116GWX?

BAS116GWX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS116GWX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS116GWX?

For technical support, including BAS116GWX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116GWX requirements.

6.How does Aetrix verify that BAS116GWX is sourced from the original manufacturer or authorized distributors?

All BAS116GWX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116GWX meets industry standards.

7.What is the process for return or replacement of BAS116GWX?

All BAS116GWX units undergo pre-shipment inspection (PSI). If there is an issue with BAS116GWX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS116GWX part is unused and in its original packaging.

Return procedure for BAS116GWX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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