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Diodes Incorporated BAS116LP3-7
- Part No.:
- BAS116LP3-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Diodes
- Package:
- 0201 (0603 Metric)
- Datasheet:
-
BAS116LP3-7.pdf
- Description:
- DIODE GP 85V 215MA X3-DFN0603-2
- Quantity:
- Payment:
- Shipping:
Inventory:9,342
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Product details
Overview
BAS116LP3-7 from Diodes Incorporated is an ultra-small leadless surface-mount silicon switching diode in a 0.6 × 0.3 mm DFN package, rated for 85 V peak reverse voltage, 215 mA forward current, and exhibiting ultra-low leakage (≤10 nA @ 75 V, 25°C) and low capacitance (1.6–3.0 pF). It serves as a signal-level clamping or protection diode in space-constrained, battery-powered portable electronics.
For engineers reviewing the BAS116LP3-7 datasheet, BAS116LP3-7 pinout, BAS116LP3-7 application, or BAS116LP3-7 equivalent, key selection criteria include its sub-10 nA leakage at 75 V, 120 ns typical reverse recovery time, 0.3 mm profile, cathode-bar marking, and compatibility with high-density PCB layouts requiring minimal board area.
Technical Context
This diode operates as a unidirectional PN junction rectifier optimized for low-leakage signal routing and ESD-sensitive front-end protection. Its X3-DFN0603-2 package integrates a matte tin-plated copper leadframe with UL 94V-0 molding compound, supporting reflow soldering per MIL-STD-202 Method 208.
Electrical behavior is characterized by temperature-stable reverse leakage (≤500 nA @ 75 V, 150°C), forward voltage ranging from 0.75 V (1 mA) to 1.35 V (150 mA), and total capacitance tightly controlled between 1.6 pF (typ.) and 3.0 pF (max.) at 0 V bias and 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Reverse Voltage | 85 V - supports signal clamping up to industrial logic rail levels without breakdown |
| Forward Current (Cont.) | 215 mA - sufficient for low-power signal path switching and bias network routing |
| Reverse Leakage (75 V) | ≤10 nA @ 25°C - preserves battery life in always-on sensor nodes and RTC backup paths |
| Total Capacitance | 1.6–3.0 pF @ 0 V - minimizes signal distortion in RF detector and high-speed data line protection |
| Reverse Recovery Time | 120–3000 ns - enables use in <10 MHz digital signal conditioning and analog sample-hold circuits |
| Package Dimensions | 0.6 × 0.3 × 0.3 mm - fits beneath 0201 passives and within tight pitch RF module footprints |
Pinout & Package
Package: X3-DFN0603-2 - ultra-compact, leadless, dual-terminal plastic package with exposed thermal pad not present; terminals are co-planar, cathode identified by bar marking on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to higher-potential node during conduction; requires PCB trace capable of 215 mA continuous |
| Cathode (bar-marked) | Forward current exit / reverse blocking terminal | Typically tied to reference plane or clamp rail; polarity must be verified via top-side marking before placement |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low leakage current | ≤10 nA @ 75 V, 25°C - extends shelf life and runtime in coin-cell-powered IoT sensors |
| Low junction capacitance | 1.6 pF typical - maintains signal integrity in 2.4 GHz BLE antenna switch bias networks |
| 0.3 mm profile | Enables stacking under shields or integration into stacked-die modules without height conflict |
| Lead-free & halogen-free | Meets IPC-J-STD-609 Class 3 for green compliance - supports automotive and medical end-equipment certifications |
Applications
| Wearable Heart Rate Monitor Front-End | Bluetooth LE Beacon Signal Clamping |
|---|---|
Use Scenario: Protects optical sensor ADC input from ESD and overvoltage transients during wrist-contact events. IC Role / Device Role / Timing Role: Low-leakage clamping diode placed directly at sensor interface, shunting >2 kV HBM spikes to ground. Use Value: Sub-10 nA leakage prevents DC offset drift in microvolt-level photodiode current measurement paths. | Use Scenario: Limits RF detector output swing to prevent saturation of baseband amplifier input. IC Role / Device Role / Timing Role: Signal-level clamp in RSSI detection chain, operating at 2.4 GHz ISM band edge frequencies. Use Value: 1.6 pF capacitance avoids resonant peaking that would distort received signal strength accuracy. |
| Smartwatch RTC Backup Path | Industrial Wireless Sensor Node Power Sequencing |
Use Scenario: Isolates main battery from real-time clock backup capacitor during deep-sleep mode. IC Role / Device Role / Timing Role: Low-leakage blocking diode in coin-cell retention path, minimizing self-discharge. Use Value: ≤10 nA leakage extends CR2032 backup runtime beyond 5 years without recharge or replacement. | Use Scenario: Enables controlled power-up sequencing between MCU and LoRa transceiver rails. IC Role / Device Role / Timing Role: Forward-biased isolation element ensuring clean 3.3 V rail ramp before enabling 5 V PA supply. Use Value: 215 mA continuous rating supports transient inrush during simultaneous peripheral wake-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage signal diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAS16LP3-7 | Higher leakage (≤50 nA @ 75 V), same package and VF | Less suitable for multi-year battery backup; acceptable for short-cycle portable devices | Select when cost sensitivity outweighs ultra-low leakage requirement |
| 1N914BWS-7-F | Larger SOD-323 package (1.7 × 1.3 mm), 100 V VRRM, 100 nA IR | Requires 5× more PCB area; better surge robustness but incompatible with ultra-dense layouts | Choose only if layout allows larger footprint and higher leakage is tolerable |
Compared with BAS16LP3-7 and 1N914BWS-7-F, the BAS116LP3-7 uniquely delivers sub-10 nA leakage in the smallest industry-standard DFN footprint-critical for wearables and miniaturized wireless sensors where board space and battery longevity are co-constrained.
Availability
BAS116LP3-7 is available at Aetrix Electronics and suitable for wearable electronics, Bluetooth LE beacon design, and industrial wireless sensor node development requiring stable component supply across long production lifecycles.
Supply support for BAS116LP3-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for consumer, industrial, and automotive markets.
The BAS116LP3-7 belongs to Diodes' ultra-miniature signal diode product line, engineered specifically for space- and power-constrained portable electronics requiring precision leakage control and minimal parasitic capacitance.
FAQ
What is the maximum operating temperature for BAS116LP3-7?
The BAS116LP3-7 is rated for junction and storage temperatures from –55°C to +150°C. Its thermal resistance (RθJA) is 500°C/W on FR-4 board with recommended pad layout, meaning it can sustain full 215 mA forward current only below ~85°C ambient unless heatsinking is enhanced.
How is cathode identification implemented on the BAS116LP3-7 package?
The cathode is marked by a visible bar on the top surface of the X3-DFN0603-2 package. This bar aligns with one of the two terminals and corresponds to the cathode terminal per the device's polarity diagram in DS35241 Rev. 7–3. No silkscreen or dot marking is used-only the bar.
Does BAS116LP3-7 support lead-free reflow soldering?
Yes. The device uses matte tin plating over copper leadframe and is qualified for lead-free reflow per JEDEC J-STD-020 moisture sensitivity Level 1. Peak reflow temperature must not exceed 260°C, and the recommended profile follows IPC/JEDEC J-STD-020D standards.
Can BAS116LP3-7 be used in place of a Schottky diode for low-VF applications?
No. With a typical VF of 0.75–1.35 V (vs. 0.15–0.45 V for Schottkys), the BAS116LP3-7 is a standard silicon PN diode optimized for leakage and capacitance-not forward drop. Use only where low leakage and low Cj outweigh VF requirements.
BAS116LP3-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 0201 (0603 Metric)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 85 V
- Current - Average Rectified (Io):
- 215mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.35 V @ 150 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 10 nA @ 75 V
- Capacitance @ Vr, F:
- 3pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X3-DFN0603-2
- Operating Temperature - Junction:
- -65°C ~ 150°C
BAS116LP3-7 FAQ
1.How can I place an order for BAS116LP3-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS116LP3-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS116LP3-7 reliable?
The price and inventory of BAS116LP3-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116LP3-7 is usually 5 days.
3.What payment methods are accepted for BAS116LP3-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116LP3-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS116LP3-7?
BAS116LP3-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS116LP3-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS116LP3-7?
For technical support, including BAS116LP3-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116LP3-7 requirements.
6.How does Aetrix verify that BAS116LP3-7 is sourced from the original manufacturer or authorized distributors?
All BAS116LP3-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116LP3-7 meets industry standards.
7.What is the process for return or replacement of BAS116LP3-7?
All BAS116LP3-7 units undergo pre-shipment inspection (PSI). If there is an issue with BAS116LP3-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS116LP3-7 part is unused and in its original packaging.
Return procedure for BAS116LP3-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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