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Diodes Incorporated BAS116LPH4-7B
- Part No.:
- BAS116LPH4-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Diodes
- Package:
- 0402 (1006 Metric)
- Datasheet:
-
BAS116LPH4-7B.pdf
- Description:
- DIODE GEN PURP 85V 215MA 2DFN
- Quantity:
- Payment:
- Shipping:
Inventory:57,237
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Product details
Overview
BAS116LPH4-7B from Diodes Incorporated is an ultra-low-leakage surface-mount silicon switching diode in a 1.0×0.6 mm X2-DFN1006-2 package, rated for 85 V peak reverse voltage, 215 mA forward current, and exhibiting only 5 nA leakage at 75 V and 25°C. It delivers low forward voltage (1.1 V max at 50 mA), low capacitance (1.5 pF at 0 V), and fast 3.0 µs reverse recovery time - ideal for precision signal clamping and high-frequency detector circuits in space-constrained portable electronics.
For engineers reviewing the BAS116LPH4-7B datasheet, BAS116LPH4-7B pinout, BAS116LPH4-7B application, or BAS116LPH4-7B equivalent, key selection criteria include its sub-10 nA leakage performance at elevated temperature, 0.4 mm profile enabling ultra-thin PCB designs, and AEC-Q200 readiness for automotive-grade reliability validation.
Technical Context
This diode operates as a unidirectional signal-level clamp and detector in low-power analog front-ends. Its 1.5 pF junction capacitance and 3.0 µs trr support operation up to ~100 MHz in RF envelope detection, while the 85 V VRRM rating enables use in 48 V system protection paths and bias networks.
The X2-DFN1006-2 package features NiPdAu-plated copper terminals with J-STD-020 Level 1 moisture sensitivity and UL 94V-0 mold compound. Thermal resistance is 417°C/W (junction-to-ambient on FR-4), limiting continuous dissipation to 300 mW at 25°C with linear derating above 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 85 V - supports DC blocking in 48 V industrial bus interfaces without breakdown risk |
| IFM | 215 mA - sufficient for biasing low-current op-amp input protection networks |
| IR @ 75 V, 25°C | 5 nA - enables accurate DC-coupled signal sampling in high-impedance sensor nodes |
| VF @ 50 mA | 1.1 V max - minimizes forward drop error in precision rectifier applications |
| CT @ 0 V, 1 MHz | 1.5 pF - preserves signal integrity in >50 MHz RF detector and mixer bias circuits |
| trr | 3.0 µs - suitable for medium-speed switching in sample-and-hold and peak-detect circuits |
| RθJA | 417 °C/W - requires thermal pad layout per Diodes' recommended footprint for sustained 300 mW operation |
Pinout & Package
Package: X2-DFN1006-2 - ultra-small leadless 2-terminal surface-mount package (1.0 × 0.6 × 0.4 mm), cathode marked by bar on top surface, molded green compound, NiPdAu terminal finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 (Anode) | Anode connection | Connected to lower-potential node in forward-biased path; no internal marking - identified by absence of cathode bar |
| Terminal 2 (Cathode) | Cathode connection | Marked by visible bar on top surface; connects to higher-potential node during conduction; serves as reference for polarity-sensitive clamping |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low leakage | 5 nA @ 75 V, 25°C - maintains accuracy in high-Z analog monitoring paths over temperature |
| Low-profile packaging | 0.4 mm height - enables stacking under shields or integration into <1.0 mm total thickness modules |
| Low junction capacitance | 1.5 pF - reduces loading on RF signal lines and preserves bandwidth in detector stages |
| AEC-Q200 readiness | PPAP-capable, IATF 16949 manufacturing - supports qualification for automotive infotainment and body control modules |
| Halogen & antimony free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets IPC-1752A Tier 2 environmental compliance reporting |
Applications
| RF Envelope Detection | Precision Signal Clamping |
|---|---|
|
Use Scenario: Demodulating AM signals in Bluetooth LE receiver front-ends. IC Role / Device Role / Timing Role: Passive detector diode converting RF carrier amplitude to baseband voltage. Use Value: 1.5 pF capacitance avoids roll-off below 2.4 GHz; 3.0 µs trr ensures fidelity across modulation bandwidths up to 20 MHz. |
Use Scenario: Protecting ADC inputs from transient overvoltage in medical ECG front-ends. IC Role / Device Role / Timing Role: Low-leakage clamp limiting input swing to ±0.7 V relative to supply rails. Use Value: 5 nA IR prevents DC offset drift in 10 MΩ input impedance paths; 0.4 mm profile fits beneath ECG electrode connectors. |
| High-Voltage Bias Network | Low-Power Sensor Interface |
|
Use Scenario: Providing isolated bias voltage for photodiode transimpedance amplifiers in optical smoke detectors. IC Role / Device Role / Timing Role: Reverse-biased blocking element isolating 48 V supply from sensitive analog circuitry. Use Value: 85 V VRRM withstands surge transients; 80 nA IR at 150°C ensures stable bias over full operating range. |
Use Scenario: Level-shifting output of MEMS pressure sensors in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Unidirectional level translator shifting 0–1.8 V logic to 0–3.3 V domain. Use Value: 1.1 V VF at 10 mA enables minimal voltage loss; 0.0009 g mass reduces mechanical stress on flexible PCB substrates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSVRB140SFT3G | Higher VF (1.25 V @ 50 mA), same 85 V VRRM, 2.0 pF CT, 5 nA IR | Designed for automotive alternator rectification; larger SOD-923 footprint (1.0×0.6 mm same, but 0.5 mm height) | Prefer when board-level thermal relief is needed; avoid if 0.4 mm Z-height is mandatory |
| BAS16H-7-F | Higher IR (50 nA @ 75 V), same VF/CT/trr, 100 V VRRM, SOT-23 package (3.0×1.4 mm) | General-purpose switching; not qualified for AEC-Q200; significantly larger footprint | Select only for non-automotive, non-space-constrained designs where leakage tolerance >10× higher is acceptable |
Compared with NSVRB140SFT3G and BAS16H-7-F, the BAS116LPH4-7B uniquely combines 0.4 mm profile, 5 nA leakage at 25°C, and AEC-Q200 readiness - making it the only choice for thermally dense automotive sensor modules requiring long-term DC stability.
Availability
BAS116LPH4-7B is available at Aetrix Electronics and suitable for RF detector design, precision analog clamping, high-voltage bias isolation, and low-power sensor interfacing requiring stable component supply across production lifecycles.
Supply support for BAS116LPH4-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The BAS116LPH4-7B belongs to Diodes' precision low-leakage diode product line, engineered specifically for high-impedance signal conditioning, RF detection, and automotive-grade sensor interface applications demanding minimal parasitic effects.
FAQ
What is the maximum operating temperature for BAS116LPH4-7B?
The device supports continuous operation from –55°C to +150°C ambient. At 150°C, leakage rises to 80 nA at 75 V, and power derating reduces usable dissipation to approximately 120 mW. Thermal design must follow Diodes' recommended X2-DFN1006-2 pad layout to maintain junction temperature within limits.
Is BAS116LPH4-7B qualified to AEC-Q200?
Yes - the part is manufactured in IATF 16949-certified facilities and supports PPAP documentation. While not pre-qualified out-of-box, Diodes confirms full AEC-Q200 test capability and provides change control for automotive customers requiring qualification to stress test groups including temperature cycling, humidity bias, and high-temperature operating life.
How is cathode polarity identified on the X2-DFN1006-2 package?
The cathode is marked by a visible bar on the top surface of the package, aligned with Terminal 2. The anode (Terminal 1) has no marking. Bottom-view silkscreen is not used; orientation is verified optically using the bar and confirmed via continuity testing with diode mode on a multimeter.
Can BAS116LPH4-7B replace BAS16 in existing designs?
Only with layout revision: BAS116LPH4-7B uses X2-DFN1006-2 (1.0×0.6 mm), while BAS16 uses SOT-23 (3.0×1.4 mm). Electrically, it offers lower leakage (5 nA vs. 50 nA) and capacitance (1.5 pF vs. 2.0 pF), but requires requalification due to different thermal and mechanical behavior in automated assembly and board-level reliability testing.
BAS116LPH4-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 0402 (1006 Metric)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 85 V
- Current - Average Rectified (Io):
- 215mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Capacitance @ Vr, F:
- 1.5pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN1006-2
- Operating Temperature - Junction:
- -55°C ~ 150°C
BAS116LPH4-7B FAQ
1.How can I place an order for BAS116LPH4-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS116LPH4-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS116LPH4-7B reliable?
The price and inventory of BAS116LPH4-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116LPH4-7B is usually 5 days.
3.What payment methods are accepted for BAS116LPH4-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116LPH4-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS116LPH4-7B?
BAS116LPH4-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS116LPH4-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS116LPH4-7B?
For technical support, including BAS116LPH4-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116LPH4-7B requirements.
6.How does Aetrix verify that BAS116LPH4-7B is sourced from the original manufacturer or authorized distributors?
All BAS116LPH4-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116LPH4-7B meets industry standards.
7.What is the process for return or replacement of BAS116LPH4-7B?
All BAS116LPH4-7B units undergo pre-shipment inspection (PSI). If there is an issue with BAS116LPH4-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS116LPH4-7B part is unused and in its original packaging.
Return procedure for BAS116LPH4-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS116LPH4-7B Tags
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