My Inquiry
My Account
Nexperia USA Inc. BAS116LSYL
- Part No.:
- BAS116LSYL
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- SOD-882
- Datasheet:
-
BAS116LSYL.pdf
- Description:
- DIODE GP 85V 325MA DFN1006BD-2
- Quantity:
- Payment:
- Shipping:
Inventory:4,358
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BAS116LSYL from Nexperia is a low-leakage silicon switching diode in a DFN1006BD-2 (SOD882BD) leadless SMD package with side-wettable flanks. It delivers 5 nA max reverse leakage at 75 V, 3 µs max reverse recovery time, and 85 V repetitive peak reverse voltage, serving as a precision signal path switch or bias clamp in high-impedance analog front-ends.
For engineers reviewing the BAS116LSYL datasheet, BAS116LSYL pinout, BAS116LSYL application, or BAS116LSYL equivalent, this device is selected for ultra-low leakage requirements in battery-powered sensor interfaces, RF detector circuits, and sample-and-hold input protection where sub-nA leakage and minimal junction capacitance (2 pF typical) directly impact measurement integrity.
Technical Context
The BAS116LSYL operates as a single-junction planar silicon diode optimized for low-current signal routing. Its 2 pF junction capacitance at 0 V and 3 µs trr enable fast, low-distortion switching in high-frequency detector and clamping roles without parasitic loading.
Designed for surface-mount assembly on FR4 PCBs with standard footprint and AOI-compatible side-wettable flanks, it maintains stable 5 nA IR up to 150 °C ambient and supports pulsed forward currents up to 4 A (100 µs), making it suitable for transient-suppression-coupled bias networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Leakage Current | 5 nA max at VR = 75 V, 25 °C - enables high-impedance node retention in micropower sensor biasing |
| Repetitive Peak Reverse Voltage | 85 V - supports operation across industrial 24 V and telecom -48 V supply rails |
| Reverse Recovery Time | 3 µs max - ensures minimal switching distortion in 100 kHz–1 MHz detector and sampling applications |
| Junction Capacitance | 2 pF typical at VR = 0 V, f = 1 MHz - reduces signal coupling loss in RF envelope detection paths |
| Forward Voltage | 1.25 V max at IF = 150 mA - limits conduction loss in low-duty-cycle clamping circuits |
| Package | DFN1006BD-2 (SOD882BD), 1.0 mm × 0.6 mm × 0.47 mm - enables 0201-class board space efficiency with reflow-solderable side flanks |
Pinout & Package
DFN1006BD-2 (SOD882BD) is a 2-terminal, leadless plastic package with side-wettable flanks for automated optical inspection and reliable solder joint formation. Dimensions: 1.0 mm × 0.6 mm × 0.47 mm body, 0.65 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (K) | Connected to higher-potential node during reverse bias; marking side on top surface identifies this terminal |
| 2 | Anode (A) | Connected to lower-potential node during forward conduction; electrically isolated from cathode by PN junction |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low reverse leakage | 5 nA max at 75 V enables >100 MΩ effective isolation in DC-coupled sensor bias networks |
| Side-wettable flanks | Facilitates automated optical inspection of solder joints without X-ray, reducing post-reflow QA cost |
| Low junction capacitance | 2 pF typical minimizes signal attenuation and phase shift in RF detector and timing reference paths |
| Fast reverse recovery | 3 µs max supports clean switching in 300 kHz–1 MHz sample-and-hold and peak-detect circuits |
Applications
| RF Envelope Detection | Precision Sensor Biasing |
|---|---|
Use Scenario: Demodulating AM signals in IoT wireless receivers using passive diode detectors. IC Role / Device Role / Timing Role: Signal-path rectifier converting RF carrier amplitude to baseband voltage. Use Value: 2 pF capacitance preserves high-frequency response; 5 nA leakage prevents DC offset drift in low-level output filtering. |
Use Scenario: Providing stable bias current to photodiode or thermopile sensors in portable gas analyzers. IC Role / Device Role / Timing Role: Low-leakage clamp protecting op-amp inputs from overvoltage transients. Use Value: Sub-10 nA leakage avoids injection error into femtoampere-range transimpedance amplifiers. |
| Sample-and-Hold Input Protection | Low-Power Reference Clamping |
Use Scenario: Front-end protection for SAR ADC sample switches in battery-operated data loggers. IC Role / Device Role / Timing Role: Fast-recovery shunt clamp limiting input voltage excursions during acquisition phase. Use Value: 3 µs trr ensures clamp action completes before hold capacitor settling, preventing sampling aperture error. |
Use Scenario: Stabilizing voltage references in energy-harvesting PMICs where quiescent current must remain below 1 µA. IC Role / Device Role / Timing Role: Low-leakage series element maintaining reference node integrity during sleep mode. Use Value: 5 nA max IR contributes <0.5 mV error across 100 kΩ reference divider, preserving ±0.1% accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAS16L,115 | Higher IR (100 nA max at 75 V); same DFN1006BD-2 package; VF = 1.25 V | Not suitable for sub-10 nA bias networks; acceptable in general-purpose clamping where leakage tolerance >50 nA | Select when cost sensitivity outweighs leakage requirement and thermal performance is secondary |
| 1N4148W-Q | Higher trr (4 ns typical vs. 3 µs); TO-236AB (SOT23) package; IR = 25 nA max at 75 V | Unsuitable for high-impedance analog nodes; preferred in through-hole prototyping or legacy board upgrades | Choose only if board redesign is impractical and 5× higher leakage is acceptable in target circuit |
Compared with BAS116LSYL, BAS16L,115 trades 20× higher leakage for broader availability, while 1N4148W-Q sacrifices both leakage and package miniaturization for legacy compatibility-making BAS116LSYL the sole option meeting ≤5 nA + DFN1006BD-2 constraints.
Availability
BAS116LSYL is available at Aetrix Electronics and suitable for precision sensor interfaces, RF detector circuits, and low-power reference clamping requiring stable component supply with guaranteed long-term sourcing.
Supply support for BAS116LSYL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.
The BAS116LSYL belongs to Nexperia's low-leakage diode product line, engineered specifically for signal integrity preservation in high-impedance, micropower analog systems where leakage-induced offset and capacitance-induced bandwidth loss are design-limiting factors.
FAQ
What is the maximum allowable reverse voltage for continuous operation?
The BAS116LSYL supports continuous reverse bias up to 75 V (VR), as defined in its limiting values table. Exceeding this value risks irreversible junction breakdown. The 85 V VRRM rating applies only to repetitive peak conditions under specified pulse duty cycles and thermal conditions-not steady-state DC operation.
Can BAS116LSYL be used in reflow soldering processes with standard lead-free profiles?
Yes. The DFN1006BD-2 package is qualified for lead-free reflow per J-STD-020, with peak temperatures up to 260 °C. Nexperia provides a dedicated footprint (Fig. 9) specifying 0.4 mm solder land width and 0.7 mm length per flank to ensure reliable wetting and AOI visibility of side joints.
How does temperature affect reverse leakage performance?
IR increases with temperature: 5 nA max at 25 °C rises to 80 nA max at 150 °C (per Table 7). This exponential rise follows silicon diode physics and must be modeled in high-temperature sensor bias designs-e.g., a 125 °C ambient may yield ~30 nA, impacting femtoampere-scale transimpedance gain stability.
Is the BAS116LSYL suitable for automotive applications?
No. The BAS116LSYL is not AEC-Q200 qualified and lacks automotive-grade screening, temperature range validation (-40 °C to +150 °C operational but not qualified), or failure rate documentation required for automotive use. It is intended for industrial, consumer, and medical equipment where automotive qualification is not mandated.
BAS116LSYL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOD-882
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 85 V
- Current - Average Rectified (Io):
- 325mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1006BD-2
- Operating Temperature - Junction:
- 150°C
BAS116LSYL FAQ
1.How can I place an order for BAS116LSYL through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS116LSYL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS116LSYL reliable?
The price and inventory of BAS116LSYL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116LSYL is usually 5 days.
3.What payment methods are accepted for BAS116LSYL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116LSYL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS116LSYL?
BAS116LSYL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS116LSYL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS116LSYL?
For technical support, including BAS116LSYL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116LSYL requirements.
6.How does Aetrix verify that BAS116LSYL is sourced from the original manufacturer or authorized distributors?
All BAS116LSYL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116LSYL meets industry standards.
7.What is the process for return or replacement of BAS116LSYL?
All BAS116LSYL units undergo pre-shipment inspection (PSI). If there is an issue with BAS116LSYL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS116LSYL part is unused and in its original packaging.
Return procedure for BAS116LSYL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS116LSYL Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
