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Diodes Incorporated BAS116Q-13-F
- Part No.:
- BAS116Q-13-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS116Q-13-F.pdf
- Description:
- DIODE GEN PURP 85V 215MA SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,675
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Product details
Overview
BAS116Q-13-F from Diodes Incorporated is an AEC-Q101 qualified surface-mount low-leakage switching diode in SOT23 package, featuring 85 V peak repetitive reverse voltage, ≤80 nA leakage at 75 V and +150°C, and 3.0 µs reverse recovery time. It serves as a precision signal clamping or high-impedance biasing diode in automotive sensor interfaces and analog front-end protection circuits.
For engineers reviewing the BAS116Q-13-F datasheet, BAS116Q-13-F pinout, BAS116Q-13-F application, or BAS116Q-13-F equivalent, key selection criteria include ultra-low leakage at elevated temperature, fast recovery for signal integrity preservation, automotive qualification status, and SOT23 footprint compatibility with space-constrained PCB layouts.
Technical Context
The BAS116Q-13-F is a planar epitaxial silicon switching diode optimized for low-leakage operation across -55°C to +150°C. Its design emphasizes minimal IR drift under thermal stress and stable CT of 2 pF at 0 V, enabling predictable AC coupling and RF signal path behavior.
It operates with a forward voltage of 1.1 V at 50 mA and 1.25 V at 150 mA, supporting low-power bias networks while maintaining tight VF consistency. The 500 °C/W junction-to-ambient thermal resistance reflects its FR-4 board mounting condition and defines derating limits above +25°C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 85 V - maximum repetitive reverse blocking capability without breakdown |
| IR @ 75 V, +150°C | ≤80 nA - enables stable DC bias in high-temperature sensor conditioning circuits |
| trr | 3.0 µs - supports clean edge transitions in <1 MHz signal routing and sampling hold paths |
| CT @ 0 V, 1 MHz | 2 pF - minimizes capacitive loading on high-impedance analog nodes |
| PD @ TA = +25°C | 250 mW - defines absolute power limit before thermal derating begins |
| RθJA | 500 °C/W - specifies thermal performance on standard 1-inch² 2 oz copper pad |
Pinout & Package
Package: SOT23 - surface-mount plastic package with matte tin-plated alloy 42 leadframe, moisture sensitivity level 1, UL 94V-0 rated, weight 0.008 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Forward current entry point | Connected to higher-potential node in clamping or rectification path |
| Cathode (Pin 2) | Forward current exit / reverse-blocking terminal | Typically tied to reference rail or signal return for bidirectional protection |
| NC (Pin 3) | No connection | Internally unconnected; must remain floating per datasheet |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
| Ultra-low high-temp leakage | ≤80 nA at VR = 75 V and TJ = +150°C ensures stable bias in engine bay electronics |
| SOT23 footprint compatibility | Standard 3-pin SOT23 outline enables drop-in replacement in legacy designs |
| Halogen- and antimony-free "Green" construction | Meets <900 ppm Br, <900 ppm Cl, <1000 ppm Sb requirements for eco-compliant manufacturing |
Applications
| Automotive Cabin Temperature Sensor Interface | Industrial Current-Sense Bias Network |
|---|---|
Use Scenario: Signal conditioning circuit for NTC thermistor in HVAC control module exposed to +105°C ambient. IC Role / Device Role / Timing Role: Low-leakage clamping diode protecting op-amp input against ESD and overvoltage transients. Use Value: Prevents measurement drift by limiting bias current error to <100 pA at operating temperature. | Use Scenario: Precision shunt-based current monitoring in programmable logic controller (PLC) analog I/O module. IC Role / Device Role / Timing Role: High-impedance bias path stabilizer for instrumentation amplifier reference node. Use Value: Maintains offset stability within ±2 µV due to sub-nA leakage contribution at full operating range. |
| Medical Pulse Oximeter Front-End | Test Equipment Signal Path Protection |
Use Scenario: Photodiode bias network in portable oximetry device requiring low-noise, low-drift analog chain. IC Role / Device Role / Timing Role: Reverse-biased guard ring diode isolating sensitive photodiode cathode from supply ripple. Use Value: Reduces dark current uncertainty to <0.5% of full-scale reading via 5 nA max leakage at 25°C. | Use Scenario: Input protection stage in benchtop multimeter analog front-end handling up to ±100 V transient events. IC Role / Device Role / Timing Role: Fast-recovery clamp limiting input voltage swing during overrange conditions. Use Value: Limits overshoot duration to <3.5 µs, preserving ADC sampling window integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAS16W-7-F | Higher IR (≤500 nA @ 75 V, +150°C); same VRRM and trr | Not AEC-Q101 qualified; intended for commercial-grade consumer electronics | Select when automotive qualification is not required and cost sensitivity outweighs leakage performance. |
| 1N4148W-7-F | Higher VF (1.25 V typ @ 10 mA); IR = 25 nA @ 20 V, +25°C only | Lacks high-temperature leakage spec and AEC-Q101 validation | Choose for general-purpose signal switching where thermal stability is secondary to availability. |
Compared with BAS116Q-13-F, BAS16W-7-F trades leakage performance for broader commercial availability, while 1N4148W-7-F offers lower initial cost but lacks validated high-temperature leakage behavior and automotive qualification-making BAS116Q-13-F the sole choice for safety-critical, thermally demanding environments.
Availability
BAS116Q-13-F is available at Aetrix Electronics and suitable for automotive cabin electronics, industrial current-sense modules, medical sensor interfaces, and test equipment signal protection requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAS116Q-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The BAS116 series belongs to Diodes' automotive-qualified discrete diode product line, engineered specifically for high-reliability signal conditioning, ESD protection, and bias network stabilization in harsh-environment electronic control units.
FAQ
What is the maximum reverse voltage rating for BAS116Q-13-F?
The BAS116Q-13-F has a peak repetitive reverse voltage (VRRM) rating of 85 V, verified per DS30233 Rev. 13–2. This value represents the maximum sustained reverse bias the diode can block without entering avalanche conduction under normal operating conditions at +25°C ambient.
Is BAS116Q-13-F suitable for use in automotive applications?
Yes - BAS116Q-13-F is explicitly AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. Its qualification covers temperature cycling, high-temperature reverse bias, and ESD testing per automotive reliability standards, making it approved for under-hood and cabin ECUs.
How does the leakage current behave at elevated temperatures?
At VR = 75 V and TJ = +150°C, the leakage current (IR) is specified at ≤80 nA. This is significantly tighter than typical general-purpose diodes and ensures minimal bias error in high-temperature analog circuits such as engine coolant sensors or battery management systems.
What is the significance of the "Q" suffix in BAS116Q-13-F?
The "Q" suffix denotes Diodes Incorporated's automotive-grade variant: it signifies AEC-Q101 qualification, PPAP documentation readiness, and production in IATF 16949 certified facilities. The "-13-F" indicates tape-and-reel packaging with 10,000 units per reel and lead-free, RoHS-compliant finish.
BAS116Q-13-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 85 V
- Current - Average Rectified (Io):
- 215mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
- Operating Temperature - Junction:
- -65°C ~ 150°C
BAS116Q-13-F FAQ
1.How can I place an order for BAS116Q-13-F through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS116Q-13-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS116Q-13-F reliable?
The price and inventory of BAS116Q-13-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116Q-13-F is usually 5 days.
3.What payment methods are accepted for BAS116Q-13-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116Q-13-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS116Q-13-F?
BAS116Q-13-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS116Q-13-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS116Q-13-F?
For technical support, including BAS116Q-13-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116Q-13-F requirements.
6.How does Aetrix verify that BAS116Q-13-F is sourced from the original manufacturer or authorized distributors?
All BAS116Q-13-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116Q-13-F meets industry standards.
7.What is the process for return or replacement of BAS116Q-13-F?
All BAS116Q-13-F units undergo pre-shipment inspection (PSI). If there is an issue with BAS116Q-13-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS116Q-13-F part is unused and in its original packaging.
Return procedure for BAS116Q-13-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS116Q-13-F Tags
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