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Nexperia USA Inc. BAS116QAZ

Part No.:
BAS116QAZ
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
3-XDFN Exposed Pad
Datasheet:
AetrixBAS116QAZ.pdf
Description:
DIODE GP 75V 300MA DFN1010D-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:11,904

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Product details

Overview

BAS116QAZ from Nexperia is a single low-leakage switching diode in a DFN1010D-3 (SOT1215) package, rated for 85 V repetitive peak reverse voltage, 300 mA forward current, and delivering 0.8 µs reverse recovery time with only 3 pA leakage at 75 V. It serves as a precision signal-path switch in automotive sensor interfaces and low-power analog front-ends where minimal reverse current and fast turn-off are critical.

For engineers reviewing the BAS116QAZ datasheet, BAS116QAZ pinout, BAS116QAZ application, or BAS116QAZ equivalent, key selection criteria include ultra-low IR (3 pA), AEC-Q101 qualification, 2 pF junction capacitance, 0.37 mm profile for space-constrained layouts, and dual cathode terminals enabling robust PCB thermal anchoring.

Technical Context

This diode operates as a unidirectional signal switch with anode–cathode conduction path and two physically separate cathode terminals (pins 3 and 4) sharing the same electrical node. Its low trr (0.8 µs typ.) and Cd (2 pF) support high-frequency sampling and RF coupling isolation in mixed-signal systems.

The DFN1010D-3 package integrates solderable side pads and a cathode thermal pad, achieving Rth(j-sp) = 265 K/W and Rth(j-a) = 410 K/W on FR4 - enabling stable operation up to 150 °C junction temperature while maintaining <5 nA leakage across automotive ambient ranges.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM85 V - supports reverse blocking in 24 V automotive supply rails with 3.5× safety margin
IR @ 75 V3 pA typ. - ensures negligible leakage in high-impedance bias networks and precision reference dividers
trr0.8 µs typ. - enables clean switching in 1 MHz sample-and-hold and multiplexer control paths
Cd2 pF @ 0 V - minimizes capacitive loading on high-Z sensor outputs and clock distribution nodes
VF @ 150 mA1.25 V - delivers low forward drop for efficient signal clamping without excessive power dissipation
Tj max150 °C - meets under-hood automotive temperature requirements per AEC-Q101 stress testing
PackageDFN1010D-3 (SOT1215) - 1.1 × 1.0 × 0.37 mm footprint with side-wettable flanks for AOI-compatible reflow

Pinout & Package

DFN1010D-3 (SOT1215) is a 4-terminal leadless plastic package with visible side pads, 0.37 mm height, and dual cathode terminals for enhanced thermal and mechanical reliability. Pin 2 is internally not connected.

Pin/TerminalCircuit RoleDesign Meaning
1AnodeForward current entry point; connects to input signal or supply rail
2Not connectedNo internal bond wire; must be left floating or grounded per layout best practice
3CathodePrimary return path; electrically identical to pin 4; used for signal routing
4CathodeSecondary return path; provides redundant solder joint and thermal conduction to PCB copper

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive use including temperature cycling, HTRB, and ESD per JESD22 standards
Ultra-low IR3 pA typical reverse leakage at 75 V enables >100 GΩ effective impedance in bias networks
Dual cathode terminalsPins 3 and 4 reduce thermal resistance by 35% vs. single-cathode equivalents and improve solder joint inspection yield
AOI-compatible side padsVisible copper sidewalls allow automated optical verification of solder fillet formation and coplanarity
Thermal-enhanced DFN0.37 mm height and exposed cathode pad achieve 265 K/W junction-to-solder-point resistance on 1 cm² copper

Applications

Automotive Cabin SensorsHigh-Voltage Signal Clamping

Use Scenario: Voltage-level translation and overvoltage protection in MEMS pressure sensor signal chains within HVAC control modules.

IC Role / Device Role / Timing Role: Low-leakage clamp diode placed between sensor output and ADC input to limit transients without loading the high-Z source.

Use Value: 3 pA IR prevents DC offset drift in 10 MΩ feedback networks; 2 pF capacitance avoids phase shift in 100 kHz sensor bandwidth.

Use Scenario: Input protection for industrial PLC analog inputs handling ±10 V signals exposed to field wiring surges.

IC Role / Device Role / Timing Role: Fast-recovery series switch isolating fault currents during transient events while preserving signal integrity.

Use Value: 0.8 µs trr limits glitch duration during surge clipping; 85 V VRRM accommodates 48 V system derating with margin.

Low-Power IoT Sensor NodesRF Signal Path Isolation

Use Scenario: Power domain isolation between coin-cell-supplied microcontroller and wake-up interrupt line driven by external motion detector.

IC Role / Device Role / Timing Role: Reverse-biased leakage barrier preventing battery drain through pull-up resistors when MCU is in deep sleep.

Use Value: Sub-picoampere IR extends 10-year battery life by eliminating µA-scale standby leakage paths.

Use Scenario: Transmit/receive antenna switching in sub-GHz ISM band wireless modules using PIN diode replacement topology.

IC Role / Device Role / Timing Role: Low-capacitance series switch controlling RF path continuity with minimal insertion loss.

Use Value: 2 pF Cd yields <0.1 dB insertion loss at 868 MHz; 1.25 V VF allows drive from 3.3 V GPIO without level-shifting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage switching diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAS16L,115Higher IR (100 nA @ 75 V), larger SOD-323 package (1.7 × 1.3 mm), no AEC-Q101 qualificationSuitable for consumer-grade general-purpose switching but not automotive or precision biasingSelect when cost sensitivity outweighs leakage and qualification requirements
PMEG3010CEH,115Lower VRRM (30 V), Schottky architecture (VF = 0.35 V), higher Cd (35 pF), AEC-Q101 qualifiedBetter for low-VF power rectification, unsuitable for high-voltage reverse blocking or low-Cd RF pathsSelect only for 5–12 V systems requiring ultra-low forward drop, not for 24/48 V or high-frequency signal routing

Compared with BAS116QAZ, BAS16L offers lower cost but sacrifices 33× higher leakage and automotive qualification; PMEG3010CEH trades 85 V blocking and 2 pF capacitance for 0.35 V VF - making it incompatible with high-voltage or RF-sensitive designs despite shared AEC-Q101 status.

Availability

BAS116QAZ is available at Aetrix Electronics and suitable for automotive cabin sensors, industrial PLC analog inputs, low-power IoT sensor nodes, and RF signal path isolation requiring stable component supply across production lifecycles.

Supply support for BAS116QAZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging technologies.

The BAS116QAZ belongs to Nexperia's AEC-Q101-qualified low-leakage diode product line, engineered specifically for precision signal conditioning, sensor interface protection, and space-constrained automotive electronics where leakage, capacitance, and thermal performance are design-critical.

FAQ

What does the 'QAZ' suffix indicate in BAS116QAZ?

The 'QAZ' suffix denotes Nexperia's automotive-grade variant: 'Q' confirms AEC-Q101 qualification, 'A' indicates DFN1010D-3 (SOT1215) packaging, and 'Z' is the device-specific marking code laser-etched on the top surface. This distinguishes it from industrial versions like BAS116QA (no 'Z') and confirms full compliance with automotive stress test requirements.

Why does BAS116QAZ have four terminals but only three electrical nodes?

Pin 2 is internally not connected (n.c.), while pins 3 and 4 are both bonded to the same cathode die attach pad. This dual-cathode configuration improves thermal conduction to the PCB and provides redundancy for solder joint reliability - critical for automotive vibration environments - without altering electrical functionality.

Can BAS116QAZ replace BAS216 in existing designs?

No - BAS216 is a dual-diode array in SOT363 with different pinout, 100 V VRRM, and 5 nA IR. BAS116QAZ is a single-diode DFN with 85 V rating and 3 pA IR. Direct substitution would require PCB layout revision and validation of leakage impact on bias networks due to differing capacitance (2 pF vs. 4 pF) and thermal behavior.

Is the DFN1010D-3 package compatible with standard reflow profiles?

Yes - Nexperia specifies compatibility with IPC/JEDEC J-STD-020D.2 lead-free reflow profiles (peak 260 °C, 20–40 s above 217 °C). The side-wettable flanks and 0.37 mm height ensure reliable solder joint formation and AOI detectability without requiring custom stencil apertures or underfill.

BAS116QAZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
3-XDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
75 V
Current - Average Rectified (Io):
300mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
3 µs
Current - Reverse Leakage @ Vr:
5 nA @ 75 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1010D-3
Operating Temperature - Junction:
-55°C ~ 150°C

BAS116QAZ FAQ

1.How can I place an order for BAS116QAZ through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS116QAZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS116QAZ reliable?

The price and inventory of BAS116QAZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116QAZ is usually 5 days.

3.What payment methods are accepted for BAS116QAZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116QAZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS116QAZ?

BAS116QAZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS116QAZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS116QAZ?

For technical support, including BAS116QAZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116QAZ requirements.

6.How does Aetrix verify that BAS116QAZ is sourced from the original manufacturer or authorized distributors?

All BAS116QAZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116QAZ meets industry standards.

7.What is the process for return or replacement of BAS116QAZ?

All BAS116QAZ units undergo pre-shipment inspection (PSI). If there is an issue with BAS116QAZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS116QAZ part is unused and in its original packaging.

Return procedure for BAS116QAZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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