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NXP Semiconductors BAS116T,115
- Part No.:
- BAS116T,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Diodes
- Package:
- SC-75, SOT-416
- Datasheet:
-
BAS116T,115.pdf
- Description:
- DIODE GEN PURP 75V 215MA SC75
- Quantity:
- Payment:
- Shipping:
Inventory:5,219
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Product details
Overview
BAS116T,115 from Nexperia is a single low leakage current switching diode in SOT416 (SC-75) package, designed for ultra-low-current signal routing and voltage clamping. It delivers 3 pA typical reverse leakage at 75 V, 0.8 µs reverse recovery time, 2 pF capacitance, and AEC-Q101 qualification - enabling precision biasing in automotive sensor interfaces.
For engineers reviewing the BAS116T,115 datasheet, BAS116T,115 pinout, BAS116T,115 application, or BAS116T,115 equivalent, this discrete diode supports high-speed, low-leakage switching in space-constrained PCB layouts where thermal resistance (Rth(j-a) = 833 K/W) and junction temperature limits (Tj ≤ 150 °C) are critical design constraints.
Technical Context
The BAS116T,115 operates as a unidirectional silicon switching diode with anode-cathode configuration and internal open-circuit terminal (Pin 2). Its fast trr (0.8–3 µs) and low Cd (2 pF) enable clean edge transitions in sample-and-hold and protection circuits.
Rated for VR = 75 V and VRRM = 85 V, it sustains repetitive peak forward current up to 500 mA and non-repetitive surges of 4 A (1 µs), while maintaining sub-5 nA reverse current across its full operating ambient range (−55 °C to +150 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse leakage current | 3 pA typical at VR = 75 V, 25 °C - enables nanoampere-level bias stability in precision analog front-ends |
| Reverse recovery time | 0.8 µs typical - supports >1 MHz switching in clamp and snubber networks without tail current |
| Diode capacitance | 2 pF at VR = 0 V, 1 MHz - minimizes signal loading in RF detector and high-frequency sampling paths |
| Forward voltage | 0.9 V at IF = 1 mA - ensures low-loss biasing for low-power microcontroller I/O protection |
| Repetitive peak reverse voltage | 85 V - provides margin for transient suppression in 24 V automotive supply rails |
| Junction temperature limit | 150 °C - allows operation in under-hood ECUs without derating below 100 mA continuous current |
Pinout & Package
SOT416 (SC-75) plastic surface-mounted package: 1.75 mm × 0.95 mm footprint, 0.6 mm height, 3-terminal configuration with exposed cathode pad for thermal relief.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode | Input node for forward conduction path; connects to source of protected signal or clamp reference |
| 2 | Not connected | Internally isolated; no electrical function - must remain unconnected on PCB to avoid parasitic coupling |
| 3 | Cathode | Output/return node; soldered to ground or rail for clamping; primary thermal path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JESD22-A114 (±8 kV HBM) |
| Ultra-low leakage | 3 pA typ. reverse current enables stable DC bias in photodiode amplifiers and battery-monitoring dividers |
| High-speed switching | 0.8 µs trr supports clean signal routing in 12-bit SAR ADC input protection without sampling distortion |
| Miniature SMD package | SOT416 footprint saves >60% board area vs. SOT23 - critical for wearable sensor modules and compact ECUs |
Applications
| Automotive Sensor Biasing | Reverse Polarity Protection |
|---|---|
Use Scenario: Providing stable DC bias to MEMS pressure sensor bridge in engine control unit under wide temperature swing. IC Role / Device Role / Timing Role: Low-leakage voltage reference clamp diode ensuring <100 nA error current into bridge leg. Use Value: 3 pA leakage prevents offset drift beyond ±0.02% FSR over −40 °C to +125 °C ambient range. |
Use Scenario: Protecting USB-C power delivery interface from accidental reverse connection in infotainment head unit. IC Role / Device Role / Timing Role: Series blocking diode in 5 V supply path with minimal forward drop and zero standby loss. Use Value: 0.9 V VF at 1 mA enables >98% efficiency at 100 mA load while surviving 85 V transients. |
| Voltage Clamping in Data Lines | Low-Power Microcontroller I/O Protection |
Use Scenario: Clamping CAN FD data line transients during ESD events in body control module. IC Role / Device Role / Timing Role: Fast-recovery shunt diode limiting line voltage to <12 V during 15 kV contact discharge. Use Value: 0.8 µs trr ensures clamping action completes before CAN bit period (≤500 ns at 5 Mbps) degrades integrity. |
Use Scenario: Isolating GPIO pins of ARM Cortex-M0+ MCU from external sensors in battery-powered telematics tracker. IC Role / Device Role / Timing Role: Input protection diode preventing latch-up during hot-plug insertion of I²C peripherals. Use Value: 2 pF capacitance avoids signal rise-time degradation beyond 10 ns threshold for 400 kHz I²C timing budget. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV199,115 | Higher IR (5 nA max at 75 V), same SOT416 package, trr = 4 ns faster (0.4 µs typ.) | Preferred for >10 MHz RF switching but unsuitable for pA-level bias stability | Select BAV199,115 only when speed outweighs leakage sensitivity; BAS116T,115 remains optimal for precision analog nodes |
| MMBD7000LT1G | Dual-diode configuration, higher VF (1.1 V min), IR = 100 pA max at 75 V - 33× higher leakage than BAS116T,115 | Used in dual-rail protection; not interchangeable due to pinout mismatch and leakage penalty | Choose MMBD7000LT1G only for dual-channel layout consolidation; BAS116T,115 required for single-channel, ultra-low-leakage use cases |
Compared with BAV199,115 and MMBD7000LT1G, the BAS116T,115 uniquely balances sub-picoampere leakage, automotive qualification, and SC-75 form factor - making it irreplaceable in high-accuracy sensor biasing and low-quiescent-power systems where leakage-induced offset directly impacts measurement fidelity.
Availability
BAS116T,115 is available at Aetrix Electronics and suitable for automotive sensor modules, industrial IoT edge nodes, and portable medical devices requiring stable component supply with AEC-Q101 compliance and long-term lifecycle assurance.
Supply support for BAS116T,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in high-performance discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, and computing markets.
The BAS116T,115 belongs to Nexperia's precision switching diode product line, engineered specifically for ultra-low-leakage signal routing and AEC-Q101-compliant automotive subsystems.
FAQ
What is the maximum reverse voltage rating for BAS116T,115?
The BAS116T,115 has a repetitive peak reverse voltage (VRRM) rating of 85 V and a DC reverse voltage (VR) rating of 75 V. These values define safe operating limits under continuous and transient conditions respectively; exceeding 75 V DC risks accelerated leakage growth, while short pulses up to 85 V are permitted per IEC 60134 limiting values.
Is BAS116T,115 qualified for automotive applications?
Yes, the BAS116T,115 is fully qualified to AEC-Q101 standards for discrete semiconductors, covering stress tests including temperature cycling, high-temperature reverse bias, and ESD. This makes BAS116T,115 suitable for under-hood and cabin applications such as engine control, ADAS sensors, and infotainment power management.
What does the '115' suffix in BAS116T,115 indicate?
The '115' suffix in BAS116T,115 denotes the packing method: 3,000 units per 4 mm pitch tape and reel. This matches Nexperia's standard ordering code convention where -115 corresponds to the 3k reel variant, distinct from -135 (10k reel) and other packaging options.
Can BAS116T,115 replace BAS216 in the same PCB layout?
No - although both are SOT416 diodes, BAS216 has different pinning (anode-cathode-anode) and higher leakage (50 pA typ.). BAS116T,115 uses Pin 1 = anode, Pin 2 = NC, Pin 3 = cathode; substituting BAS216 would create a short circuit due to its dual-anode configuration and invalidates the NC terminal requirement.
What is the thermal resistance from junction to ambient for BAS116T,115?
The BAS116T,115 exhibits a thermal resistance from junction to ambient (Rth(j-a)) of 833 K/W when mounted on a standard FR4 PCB with single-sided copper and tin-plated finish. This value assumes no thermal vias or copper pour; adding 2–4 thermal vias beneath the cathode pad can reduce Rth(j-a) by up to 40%.
BAS116T,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-75, SOT-416
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 215mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-75
- Operating Temperature - Junction:
- 150°C (Max)
BAS116T,115 FAQ
1.How can I place an order for BAS116T,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS116T,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS116T,115 reliable?
The price and inventory of BAS116T,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116T,115 is usually 5 days.
3.What payment methods are accepted for BAS116T,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116T,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS116T,115?
BAS116T,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS116T,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS116T,115?
For technical support, including BAS116T,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116T,115 requirements.
6.How does Aetrix verify that BAS116T,115 is sourced from the original manufacturer or authorized distributors?
All BAS116T,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116T,115 meets industry standards.
7.What is the process for return or replacement of BAS116T,115?
All BAS116T,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAS116T,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS116T,115 part is unused and in its original packaging.
Return procedure for BAS116T,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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