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Diodes Incorporated BAS116T-7

Part No.:
BAS116T-7
Manufacturer:
Diodes Incorporated
Category:
Single Diodes
Package:
SOT-523
Datasheet:
AetrixBAS116T-7.pdf
Description:
DIODE GEN PURP 85V 215MA SOT523
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,188

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Product details

Overview

BAS116T-7 from Diodes Incorporated is a single silicon switching diode in SOT-523 package, rated for 85 V peak repetitive reverse voltage, 215 mA forward current, and exhibiting ultra-low leakage (≤5 nA at 75 V, 25°C). It serves as a precision signal-level clamp or protection diode in high-impedance analog front-ends and automotive sensor interfaces.

For engineers reviewing the BAS116T-7 datasheet, BAS116T-7 pinout, BAS116T-7 application, or BAS116T-7 equivalent, key selection criteria include its 3.0 µs reverse recovery time, 2 pF junction capacitance at 0 V, 0.90–1.25 V forward voltage across 1–150 mA, AEC-Q101 qualification, and SOT-523 footprint compatibility with space-constrained PCB layouts.

Technical Context

The BAS116T-7 is a planar epitaxial silicon PN junction diode optimized for low-leakage signal routing. Its 833 °C/W thermal resistance and 150 mW power dissipation are defined under FR-4 board mounting per AP02001 layout, supporting operation from –65°C to +150°C ambient.

It delivers stable reverse characteristics up to 75 V with IR ≤5 nA at 25°C and ≤80 nA at 150°C, and exhibits VF = 1.0 V typical at IF = 10 mA - enabling predictable biasing in precision detector and sample-hold circuits without significant forward drop error.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 85 V - Maximum repetitive reverse voltage before breakdown; defines safe blocking range in clamping or ESD protection paths.
IFM 215 mA - Continuous forward current rating; supports sustained signal-level rectification or logic-level steering.
IR @ 75 V, 25°C ≤5 nA - Ultra-low leakage ensures minimal DC error in high-Z analog nodes like op-amp inputs or ADC reference dividers.
trr 3.0 µs - Reverse recovery time enables use in <1 MHz signal switching applications without excessive switching loss.
CT @ 0 V, 1 MHz 2 pF - Low junction capacitance preserves bandwidth in RF detector or fast transient sensing circuits.
VF @ 10 mA 1.0 V typical - Predictable forward drop simplifies bias network design in discrete level-shifting or voltage threshold detection.
RθJA 833 °C/W - Thermal resistance under standard FR-4 mounting; informs derating above 25°C ambient for reliability-critical deployments.

Pinout & Package

Package: SOT-523 - ultra-small surface-mount plastic case (1.60 × 0.80 × 0.50 mm), RoHS-compliant, AEC-Q101 qualified, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
Anode Forward current entry point Connected to higher-potential node during conduction; polarity marked "50" on top view per datasheet diagram.
Cathode Forward current exit / reverse blocking terminal Connected to lower-potential node; forms active clamping path when reverse-biased up to 85 V.
Case / Exposed Pad Non-electrical mechanical anchor No internal connection; provides mechanical stability only - not used for thermal or electrical conduction.

Key Features

Feature Design Value
AEC-Q101 qualification Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - suitable for under-hood sensor signal conditioning.
Ultra-low IR (≤5 nA) Minimizes input bias current error in high-gain amplifier feedback networks and precision voltage references.
SOT-523 footprint Enables placement in <1.0 mm² board area - critical for miniaturized modules such as tire pressure sensors and wearable health monitors.
Green molding compound Halogen-free, UL 94V-0 rated encapsulant - meets IPC-1752 material declaration requirements for eco-conscious industrial OEMs.

Applications

Automotive Cabin Sensors Industrial Current Loop Receivers

Use Scenario: Signal conditioning of thermistor or potentiometer outputs in HVAC control modules.

IC Role / Device Role / Timing Role: Precision clamping diode protecting op-amp inputs from ESD transients while preserving DC accuracy.

Use Value: ≤5 nA leakage prevents >1 mV offset error in 1 MΩ sensor divider networks at 25°C ambient.

Use Scenario: Input stage protection in 4–20 mA loop receivers interfacing with PLC analog inputs.

IC Role / Device Role / Timing Role: Bidirectional transient suppressor placed across differential input pins.

Use Value: 85 V VRRM withstands induced surges on long field wiring without forward conduction distortion.

Medical Pulse Oximeter Front-End IoT Environmental Sensor Nodes

Use Scenario: Biasing and protection of photodiode transimpedance amplifier in low-light detection path.

IC Role / Device Role / Timing Role: Low-capacitance (2 pF) shunt diode limiting input swing during LED drive pulse edges.

Use Value: Preserves >10 MHz small-signal bandwidth while clamping to ±0.9 V during 100 ns rise-time events.

Use Scenario: Voltage translation and overvoltage protection in battery-powered gas sensor signal chains.

IC Role / Device Role / Timing Role: Level-shifting diode between 3.3 V MCU GPIO and 5 V sensor supply domain.

Use Value: 1.0 V VF at 10 mA enables deterministic 2.3 V logic-high threshold with <1 µA quiescent error current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage signal diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
BAS16LT-7-F Same SOT-523 package; 100 V VRRM, 150 mA IFM, IR ≤10 nA at 75 V - higher voltage rating but higher leakage. Preferred where >85 V transient immunity is required, e.g., CAN bus node protection. Select if system-level surge tests exceed 85 V; accept ~2× leakage penalty in ultra-low-current nodes.
1N4148WT SOD-523 package (identical footprint); 100 V VRRM, 300 mA IFM, IR ≤25 nA at 20 V - larger leakage, wider voltage margin. Used in general-purpose digital logic clamping where leakage tolerance >10 nA is acceptable. Choose for cost-sensitive consumer designs where AEC-Q101 is not mandated and 25 nA leakage is tolerable.

Compared with BAS116T-7, BAS16LT-7-F trades leakage performance for higher reverse voltage headroom, while 1N4148WT sacrifices leakage control for broader availability and lower unit cost - making BAS116T-7 optimal for AEC-Q101-compliant, ultra-low-leakage analog signal paths.

Availability

BAS116T-7 is available at Aetrix Electronics and suitable for automotive cabin sensors, industrial current loop receivers, and medical pulse oximeter front-ends requiring stable component supply, AEC-Q101 compliance, and consistent low-leakage performance across production lots.

Supply support for BAS116T-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The BAS116T-7 belongs to Diodes' AEC-Q101-qualified low-leakage diode product line, engineered specifically for precision analog signal integrity in automotive and industrial environments where nanoscale leakage directly impacts measurement accuracy.

FAQ

Is BAS116T-7 suitable for high-frequency RF detection applications?

Yes - with 2 pF junction capacitance at 0 V and 3.0 µs reverse recovery time, the BAS116T-7 supports RF envelope detection up to ~10 MHz. Its low CT minimizes signal attenuation in crystal radio or AM demodulator front-ends, and its consistent VF enables repeatable threshold setting in zero-bias detector configurations.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation across –65°C to +150°C ambient. At 25°C ambient, full 150 mW power dissipation is allowed; above that, derating follows the 150 mW linear curve in Figure 1 - e.g., 75 mW at 75°C ambient.

Does BAS116T-7 have a built-in ESD protection structure?

No - the BAS116T-7 is a passive PN junction diode without integrated ESD clamp circuitry. However, its 85 V VRRM and low leakage make it suitable as an external discrete ESD protection element when placed in parallel with sensitive inputs, provided series impedance limits peak current to <500 mA.

Can BAS116T-7 be reflow soldered using standard lead-free profiles?

Yes - the SOT-523 package is qualified for lead-free reflow per J-STD-020D Level 1 moisture sensitivity. Standard JEDEC J-STD-020-compliant peak temperatures up to 260°C are supported; recommended soak time is 60–120 seconds at 150–200°C prior to ramp-up.

BAS116T-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-523
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
85 V
Current - Average Rectified (Io):
215mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
3 µs
Current - Reverse Leakage @ Vr:
5 nA @ 75 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-523
Operating Temperature - Junction:
-65°C ~ 150°C

BAS116T-7 FAQ

1.How can I place an order for BAS116T-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS116T-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS116T-7 reliable?

The price and inventory of BAS116T-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116T-7 is usually 5 days.

3.What payment methods are accepted for BAS116T-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116T-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS116T-7?

BAS116T-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS116T-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS116T-7?

For technical support, including BAS116T-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116T-7 requirements.

6.How does Aetrix verify that BAS116T-7 is sourced from the original manufacturer or authorized distributors?

All BAS116T-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116T-7 meets industry standards.

7.What is the process for return or replacement of BAS116T-7?

All BAS116T-7 units undergo pre-shipment inspection (PSI). If there is an issue with BAS116T-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS116T-7 part is unused and in its original packaging.

Return procedure for BAS116T-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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