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Diodes Incorporated BAS116T-7-F

Part No.:
BAS116T-7-F
Manufacturer:
Diodes Incorporated
Category:
Single Diodes
Package:
SOT-523
Datasheet:
AetrixBAS116T-7-F.pdf
Description:
DIODE GEN PURP 85V 215MA SOT523
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,508

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Product details

Overview

BAS116T-7-F from Diodes Incorporated is a surface-mount ultra-low-leakage silicon switching diode in SOT-523 package, rated for 85 V peak reverse voltage, 215 mA forward current, and 5 nA max leakage at 75 V, used in precision signal clamping and low-power analog front-ends.

For engineers reviewing the BAS116T-7-F datasheet, BAS116T-7-F pinout, BAS116T-7-F application, or BAS116T-7-F equivalent, key selection criteria include reverse leakage stability at high temperature, fast 3.0 μs reverse recovery time, low 0.90 V forward voltage at 1 mA, and AEC-Q101 qualification for automotive sensor interfaces.

Technical Context

This diode operates as a single-anode, single-cathode unidirectional switch with junction capacitance of 2 pF at 0 V, enabling high-frequency signal routing in RF detector and ESD protection circuits. Its thermal resistance of 833 °C/W reflects FR-4 board mounting per recommended pad layout.

The device delivers stable reverse characteristics up to +150 °C ambient, with leakage rising to only 80 nA at 75 V and Tj = 150 °C - critical for battery-powered instrumentation where standby current must remain sub-100 nA.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM85 V - supports signal rail clamping in 24 V industrial control systems without breakdown
IF215 mA - sufficient for biasing low-current op-amp input stages or LED indicator drivers
IR @ 75 V5.0 nA max - enables precision DC coupling in µV-level sensor amplifiers
trr3.0 μs - allows use in 100 kHz–1 MHz envelope detection without waveform distortion
CT2 pF - minimizes loading on 50 Ω RF paths in AM/FM receiver front-ends
PD150 mW - defines maximum continuous dissipation on standard FR-4 PCB with defined pad layout

Pinout & Package

Package: SOT-523 - ultra-compact 3-pin surface-mount plastic case (1.60 mm × 0.80 mm × 0.50 mm), lead-free matte tin plating, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to lower-potential node in clamping or rectification path; marked side of package indicates cathode
CathodeForward current exit / reverse blocking terminalConnected to higher-potential rail; polarity confirmed by top-mark "50" and cathode band in SOT-523 outline drawing
Case (non-connected)Thermal and mechanical anchorNo internal connection; serves only as heatsink interface and board adhesion surface

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive under-hood applications including engine control sensor conditioning
Ultra-low leakage (5 nA)Preserves battery life >10 years in always-on IoT node sleep modes
SOT-523 footprintEnables <1.3 mm² PCB area usage - ideal for space-constrained wearables and medical patches
Green molding compoundHalogen-free, UL 94V-0 compliant - meets IPC-1752a material declaration requirements

Applications

Automotive Sensor Signal ConditioningPortable Medical Instrumentation

Use Scenario: Clamping thermistor or RTD bridge output to protect ADC input from ESD-induced overvoltage.

IC Role / Device Role / Timing Role: Low-leakage bidirectional clamp diode placed between signal line and reference rail.

Use Value: Prevents ADC saturation while adding <0.5 µV offset error due to 5 nA leakage at 25 °C.

Use Scenario: Isolating multi-channel biosensor electrodes during multiplexed acquisition to avoid crosstalk.

IC Role / Device Role / Timing Role: Passive analog switch enabling channel-by-channel signal routing without active control logic.

Use Value: Achieves >100 dB isolation at 1 kHz using 2 pF junction capacitance and sub-100 nA leakage.

RF Detector CircuitsLow-Power Industrial Monitoring

Use Scenario: Demodulating AM signals in sub-GHz ISM band wireless receivers for smart metering.

IC Role / Device Role / Timing Role: Envelope detector diode operating in small-signal square-law region.

Use Value: Delivers 0.90 V forward drop at 1 mA, enabling accurate demodulation down to –20 dBm input power.

Use Scenario: Protecting microcontroller GPIO pins from transient surges in 4–20 mA loop interfaces.

IC Role / Device Role / Timing Role: Reverse-biased transient shunt diode across I/O and ground.

Use Value: Limits clamping voltage to <85 V while injecting <5 nA into MCU input leakage budget.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAS16W-7-FHigher leakage (50 nA @ 75 V), same SOT-323 package, 100 V VRRMLess suitable for µA-level bias networks but acceptable for general-purpose clampingSelect when higher reverse voltage margin is needed and leakage tolerance >10× higher
1N4148W-7-FStandard leakage (25 nA @ 20 V), SOD-123 package, 100 V VRRM, slower trr (4 ns)Not AEC-Q101 qualified; larger footprint limits high-density layoutsChoose for cost-sensitive consumer designs where automotive qualification is unnecessary

Compared with BAS116T-7-F, BAS16W-7-F trades 10× higher leakage for +15 V reverse margin, while 1N4148W-7-F sacrifices AEC-Q101 compliance and ultra-low leakage for broader availability and lower unit cost in non-automotive production.

Availability

BAS116T-7-F is available at Aetrix Electronics and suitable for automotive sensor interfaces, portable medical devices, RF detector modules, and low-power industrial monitoring systems requiring stable component supply across extended temperature ranges.

Supply support for BAS116T-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.

The BAS116T belongs to Diodes' AEC-Q101-qualified low-leakage diode product line, engineered specifically for precision analog signal integrity in automotive and medical applications where nanoampere-level leakage directly impacts measurement accuracy.

FAQ

What is the maximum junction temperature for BAS116T-7-F?

The absolute maximum junction temperature is +150 °C, matching its storage temperature rating. Derating begins at +25 °C ambient, with linear reduction to zero power dissipation at +150 °C, per Figure 1 in DS30258 Rev. 12–2. This allows operation in under-hood automotive environments without forced cooling.

Is BAS116T-7-F pin-compatible with BAS216 or BAV99?

No - BAS116T-7-F uses SOT-523 (3-pin, anode-cathode-case) while BAS216 is SOT-363 (6-pin dual) and BAV99 is SOT-363 dual series-switch. Pin count, pin function mapping, and package dimensions differ fundamentally; no mechanical or electrical interchangeability exists without PCB redesign.

Does BAS116T-7-F require special handling for moisture sensitivity?

No - it is rated Moisture Sensitivity Level 1 per J-STD-020D, meaning it may be stored indefinitely at ≤30 °C/85% RH without baking or dry-pack requirements. This simplifies assembly logistics versus MS L3+ components that mandate floor-life tracking and bake-out before reflow.

Can BAS116T-7-F replace BAT54 in low-voltage applications?

Only with circuit validation - BAT54 is a Schottky diode (0.3 V VF) optimized for low-VF, whereas BAS116T-7-F is a silicon PN diode (0.9 V VF) optimized for low leakage. Substituting it in 3.3 V logic clamping may raise forward drop by 600 mV, risking timing violations or increased power loss.

BAS116T-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-523
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
85 V
Current - Average Rectified (Io):
215mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
3 µs
Current - Reverse Leakage @ Vr:
5 nA @ 75 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-523
Operating Temperature - Junction:
-65°C ~ 150°C

BAS116T-7-F FAQ

1.How can I place an order for BAS116T-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS116T-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS116T-7-F reliable?

The price and inventory of BAS116T-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116T-7-F is usually 5 days.

3.What payment methods are accepted for BAS116T-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116T-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS116T-7-F?

BAS116T-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS116T-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS116T-7-F?

For technical support, including BAS116T-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116T-7-F requirements.

6.How does Aetrix verify that BAS116T-7-F is sourced from the original manufacturer or authorized distributors?

All BAS116T-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116T-7-F meets industry standards.

7.What is the process for return or replacement of BAS116T-7-F?

All BAS116T-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BAS116T-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS116T-7-F part is unused and in its original packaging.

Return procedure for BAS116T-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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