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Diodes Incorporated BAS116V-7
- Part No.:
- BAS116V-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
BAS116V-7.pdf
- Description:
- DIODE ARRAY GP 85V 215MA SOT-563
- Quantity:
- Payment:
- Shipping:
Inventory:17,115
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Product details
Overview
BAS116V-7 from Diodes Incorporated is a dual surface-mount low-leakage silicon switching diode in SOT563 package, featuring 85 V peak reverse voltage, ≤5 nA leakage at 75 V, 3.0 µs reverse recovery time, and 215 mA continuous forward current per element - used for precision signal clamping and high-impedance biasing in analog front-ends.
For engineers reviewing the BAS116V-7 datasheet, BAS116V-7 pinout, BAS116V-7 application, or BAS116V-7 equivalent, key selection criteria include ultra-low IRM at elevated temperature, tight VF matching across dual elements, SOT563 footprint compatibility with high-density PCB layouts, and RoHS-compliant green molding compound for automotive and medical-grade assemblies.
Technical Context
This dual diode integrates two independent, electrically isolated junctions in a single compact SOT563 package. Each element exhibits matched forward voltage characteristics (VF = 0.90–1.25 V across 1–150 mA) and symmetrical reverse recovery behavior (tRR = 3.0 µs under 10 mA IF/IR conditions).
Designed for low-power signal routing, it operates reliably from −65 °C to +150 °C with thermal resistance RθJA = 833 °C/W on FR-4 board, and derates linearly to zero power dissipation above 150 °C ambient per Fig. 1.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 85 V - supports DC blocking in 48 V industrial control rails without breakdown |
| IF | 215 mA - sufficient for biasing op-amp input protection networks |
| IR @ 75 V | ≤5 nA @ 25 °C - enables nanoampere-level leakage-critical sample-and-hold circuits |
| tRR | 3.0 µs - suitable for <100 kHz signal rectification and clamp timing |
| CT | 2 pF @ 0 V - minimizes capacitive loading on high-impedance sensor nodes |
| PD | 150 mW - limits self-heating in space-constrained IoT sensor modules |
Pinout & Package
SOT563 is a 6-terminal miniature plastic package with two anode-cathode pairs and two no-connect terminals. Dimensions: 1.60 mm × 1.20 mm × 0.60 mm (L × W × H), weight ≈ 0.003 g, UL 94V-0 rated molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| C1 | Cathode of Element 1 | Common cathode connection point for first diode; solderable matte tin finish |
| A1 | Anode of Element 1 | Input node for clamping or steering function; electrically isolated from A2/C2 |
| NC | No Connect | Internally unconnected terminal; must remain floating per datasheet |
| NC | No Connect | Second internally unconnected terminal; no PCB trace or pad required |
| A2 | Anode of Element 2 | Independent anode for second diode; enables dual-path signal conditioning |
| C2 | Cathode of Element 2 | Separate cathode node allowing differential or split-rail biasing |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low leakage current | IRM ≤ 5 nA at VR = 75 V and TA = 25 °C - preserves accuracy in high-Z feedback paths |
| Dual-element integration | Two matched diodes in one SOT563 footprint - reduces PCB area by ~40% vs. discrete SOT23 pair |
| Fast reverse recovery | tRR = 3.0 µs - maintains signal integrity in 10–50 kHz analog multiplexing |
| Green, halogen-free construction | <900 ppm Br/Cl, <1000 ppm Sb - meets IPC-1752A Tier 2 reporting for automotive supply chains |
Applications
| Instrumentation Signal Clamping | High-Voltage Sensor Biasing |
|---|---|
Use Scenario: Protecting ADC inputs from transient overvoltage in portable multimeters using back-to-back diode clamps. IC Role / Device Role / Timing Role: Low-leakage voltage limiter that activates only beyond ±10 V thresholds without loading 10 MΩ input impedance. Use Value: Prevents ADC saturation while maintaining <0.01% gain error due to sub-5 nA IRM at operating temperature. | Use Scenario: Providing stable reference bias to piezoresistive pressure sensors in HVAC control modules. IC Role / Device Role / Timing Role: Dual-anode configuration supplies matched bias currents to bridge arms while rejecting common-mode noise. Use Value: Enables <±0.1% offset drift over −40 to +85 °C via matched VF tracking between elements. |
| Low-Power RF Detector Input Protection | Medical ECG Front-End Protection |
Use Scenario: Shielding logarithmic amplifier inputs in GSM band RF power detectors from antenna coupling spikes. IC Role / Device Role / Timing Role: Fast-recovery dual clamp shunts >15 V transients within 3 µs while preserving RF envelope fidelity. Use Value: Maintains detector linearity down to −60 dBm input with <0.5 dB insertion loss at 900 MHz due to 2 pF CT. | Use Scenario: Guarding instrumentation amplifiers in Class II medical ECG monitors against ESD and defibrillation pulses. IC Role / Device Role / Timing Role: Dual-diode array routes ESD current away from IA inputs while minimizing leakage-induced baseline wander. Use Value: Achieves IEC 61000-4-2 Level 4 (8 kV contact) compliance with <100 nA total leakage at body-bias voltages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage dual diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54C-7-F | VRRM = 30 V, IRM = 1 µA @ 25 V, tRR = 5 ns | Higher speed but lower voltage rating - unsuitable for >40 V rail clamping | Select when nanosecond recovery dominates over voltage headroom |
| MMBD1204-7-F | VRRM = 100 V, IRM = 100 nA @ 75 V, SOT-23-6 package | Larger footprint, higher leakage - trades miniaturization for marginally higher VRRM | Choose if board layout allows SOT-23-6 and 100 nA leakage is acceptable |
Compared with BAT54C-7-F and MMBD1204-7-F, BAS116V-7 uniquely balances 85 V blocking, sub-5 nA leakage, and 3 µs recovery in the smallest possible SOT563 footprint - making it optimal for space-constrained, high-precision analog systems where both voltage margin and leakage integrity are critical.
Availability
BAS116V-7 is available at Aetrix Electronics and suitable for instrumentation signal clamping, high-voltage sensor biasing, low-power RF detector input protection, and medical ECG front-end protection requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAS116V-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving industrial, computing, consumer, and communications markets with high-reliability components.
The BAS116V belongs to Diodes' precision low-leakage diode product line, engineered specifically for analog signal integrity preservation in high-impedance, wide-temperature, and low-power applications.
FAQ
What is the maximum junction temperature for BAS116V-7 during continuous operation?
The device supports continuous operation up to +150 °C junction temperature, with derated power dissipation beginning at +25 °C ambient per the linear curve in Figure 1. At +85 °C ambient, maximum allowable power drops to 75 mW to maintain TJ ≤ 150 °C on standard FR-4 board with recommended pad layout.
Are the two diodes in BAS116V-7 electrically isolated from each other?
Yes - the internal schematic confirms full electrical isolation between Element 1 (A1–C1) and Element 2 (A2–C2). No shared junctions or substrate connections exist; the NC terminals are physically disconnected, enabling independent biasing and signal routing for each diode path.
Does BAS116V-7 meet automotive AEC-Q200 stress test requirements?
No - BAS116V-7 is not AEC-Q200 qualified. While its operating temperature range (−65 °C to +150 °C) exceeds automotive Grade 3 limits, Diodes Incorporated does not list this part in its AEC-Q200 qualified portfolio, and the datasheet contains no qualification report or automotive-specific reliability data.
Can BAS116V-7 be used in reverse-biased photodiode bias networks?
Yes - its ≤5 nA leakage at 75 V and 25 °C, plus low 2 pF capacitance, make it suitable for reverse-biasing photodiodes in low-light detection circuits. However, leakage rises to 80 nA at +150 °C, so thermal design must ensure junction temperature remains ≤60 °C for sub-10 nA performance in precision optical sensing.
BAS116V-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 85 V
- Current - Average Rectified (Io) (per Diode):
- 215mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
BAS116V-7 FAQ
1.How can I place an order for BAS116V-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS116V-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS116V-7 reliable?
The price and inventory of BAS116V-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116V-7 is usually 5 days.
3.What payment methods are accepted for BAS116V-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116V-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS116V-7?
BAS116V-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS116V-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS116V-7?
For technical support, including BAS116V-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116V-7 requirements.
6.How does Aetrix verify that BAS116V-7 is sourced from the original manufacturer or authorized distributors?
All BAS116V-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116V-7 meets industry standards.
7.What is the process for return or replacement of BAS116V-7?
All BAS116V-7 units undergo pre-shipment inspection (PSI). If there is an issue with BAS116V-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS116V-7 part is unused and in its original packaging.
Return procedure for BAS116V-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS116V-7 Tags
-
BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
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BAV99,215
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BAT54SLT1G
onsemi
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BAV70LT1G
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BAT54CLT1G
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BAT54S-7-F
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BAV99LT1G
onsemi
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BAT54S,215
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MMBD1503-TP
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BAV99WT1G
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