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Nexperia USA Inc. BAS116VY-QX
- Part No.:
- BAS116VY-QX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAS116VY-QX.pdf
- Description:
- DIODE ARRAY GP 75V 180MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,750
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Product details
Overview
BAS116VY-QX from Nexperia is a low-leakage triple switching diode in SOT363-3 (SC-88) package, electrically isolated per diode, rated for 75 V continuous reverse voltage, 5 nA max reverse current at 75 V, and 0.8 µs typical reverse recovery time - deployed in automotive signal routing and precision bias networks where leakage-induced offset must be minimized.
For engineers reviewing the BAS116VY-QX datasheet, BAS116VY-QX pinout, BAS116VY-QX application, or BAS116VY-QX equivalent, key selection criteria include reverse leakage stability over temperature, triple-diode isolation integrity, AEC-Q101 qualification status, and SOT363-3 thermal resistance (500 K/W) in FR4 PCB layouts.
Technical Context
This triple diode integrates three independent, epitaxial silicon junctions in a single compact SMT package, each with fully decoupled anode–cathode paths and no shared substrate conduction. Its design targets low-current analog signal steering and clamping in automotive control modules where leakage below 5 nA at 75 V ensures minimal error injection into high-impedance nodes.
The device operates across −55 °C to +150 °C ambient, supports repetitive peak forward current up to 1 A (IFRM), and maintains stable VF (0.9–1.25 V at 1–150 mA) and Cd (2 pF typical at 0 V) - enabling predictable timing and capacitance behavior in RC-coupled interfaces and ESD protection front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse voltage (VR) | 75 V max - sets maximum allowable DC blocking capability per diode without breakdown. |
| Reverse current (IR) | 5 nA max at VR = 75 V, Tj = 25 °C - enables use in µA-level bias and sensing circuits without leakage-induced drift. |
| Reverse recovery time (trr) | 0.8 µs typical - supports medium-speed switching (≤1 MHz) in signal path clamping and level translation. |
| Forward voltage (VF) | 1.25 V max at IF = 150 mA - defines conduction loss and self-heating under moderate load conditions. |
| Diode capacitance (Cd) | 2 pF typical at VR = 0 V, f = 1 MHz - minimizes signal distortion in high-frequency analog routing and RF detector inputs. |
| Junction temperature (Tj) | 150 °C max - allows operation in under-hood automotive environments with sustained thermal stress. |
| Thermal resistance (Rth(j-a)) | 500 K/W - determines power derating on standard FR4 PCB; limits continuous dissipation to ~250 mW at Tamb = 25 °C. |
Pinout & Package
Package: SOT363-3 (SC-88), 6-pin TSSOP with 0.65 mm pitch, 2.2 × 1.35 mm body, and exposed pad not present. Designed for reflow soldering on standard FR4 PCBs with defined footprint per Nexperia sot363-3_fr layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | A1 | Anode of Diode 1 - dedicated input node for first independent switching path. |
| 2 | A2 | Anode of Diode 2 - electrically isolated anode for second signal channel. |
| 3 | A3 | Anode of Diode 3 - third independent anode, enabling triple parallel or multi-rail clamping. |
| 4 | K3 | Cathode of Diode 3 - paired with Pin 3 to form complete third diode junction. |
| 5 | K2 | Cathode of Diode 2 - completes second diode; no internal connection to K1 or K3. |
| 6 | K1 | Cathode of Diode 1 - completes first diode; all cathodes are separate terminals. |
Key Features
| Feature | Design Value |
|---|---|
| Triple electrically isolated diodes | Three independent PN junctions with no shared substrate conduction - prevents crosstalk in multi-channel bias networks. |
| Low leakage current | ≤5 nA at 75 V reverse bias - preserves accuracy in high-impedance sensor interfaces and reference dividers. |
| AEC-Q101 qualified | Stress-tested per Automotive Electronics Council standard - validated for under-hood deployment in engine control units and ADAS sensors. |
| Medium-speed switching | 0.8 µs trr typical - balances speed and low capacitance for signal integrity in 100 kHz–1 MHz applications. |
| SOT363-3 footprint compatibility | Standardized 0.65 mm pitch, 2.2 × 1.35 mm outline - enables drop-in replacement in space-constrained automotive PCBs. |
Applications
| Automotive Engine Control Unit (ECU) Signal Clamping | Industrial Sensor Bias Network |
|---|---|
|
Use Scenario: Protecting microcontroller ADC inputs from transient overvoltage in diesel ECU crankshaft position sensing circuits. IC Role / Device Role / Timing Role: Triple diode provides rail-to-rail clamping (A1→K1, A2→K2, A3→K3) while maintaining isolation between crank, cam, and knock sensor channels. Use Value: 5 nA leakage prevents DC offset accumulation in 12-bit ADC reference paths, preserving ±0.5% measurement accuracy over 10-year service life. |
Use Scenario: Providing stable bias current to MEMS pressure transducers in factory automation manifolds operating at 125 °C ambient. IC Role / Device Role / Timing Role: Each diode delivers temperature-stable forward bias (VF = 1.1 V @ 50 mA) to individual transducer bridges with no inter-channel leakage coupling. Use Value: 150 °C Tj rating and <80 nA IR at 150 °C ensure long-term zero-point stability within ±0.1% FS over thermal cycling. |
| Automotive Infotainment USB Data Line Protection | Medical Patient Monitor Analog Front-End |
|
Use Scenario: ESD suppression on USB 2.0 D+/D− lines in head-unit systems, meeting ISO 10605 Level 4 (30 kV air discharge). IC Role / Device Role / Timing Role: Two diodes (A1/K1 and A2/K2) clamp D+ and D− to VBUS/GND; third diode (A3/K3) protects auxiliary I²C bus. Use Value: 2 pF Cd minimizes signal rise-time degradation (<5% jitter increase at 480 Mbps), while 0.8 µs trr avoids data corruption during fast transients. |
Use Scenario: Precision DC coupling and baseline stabilization in EEG amplifier input stages requiring sub-nA input current integrity. IC Role / Device Role / Timing Role: Diode pair (A1/K1 and A2/K2) forms matched bias network for op-amp input stage; third diode (A3/K3) isolates reference buffer. Use Value: ≤5 nA IR at 25 °C and <3 nA typical at 37 °C body temperature eliminates baseline wander exceeding 1 µV/min in clinical-grade recordings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage triple diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSVBA116MUTAG | Same SOT363-3 package, but 100 V VR and 10 nA IR - higher voltage margin, double leakage at 75 V. | Preferred in 24 V commercial vehicle systems needing >85 V surge tolerance; less suitable for µA-sensor bias. | Select when VR > 85 V required and leakage budget allows ≥10 nA; verify thermal derating at 150 °C. |
| Diodes Inc. BAV99WQ-7-F | Triple diode in SOT363, AEC-Q101 qualified, but 4 nA IR and 1.5 µs trr - lower leakage, slower switching. | Better for ultra-low-leakage analog hold circuits; unsuitable for >500 kHz signal routing due to longer trr. | Choose for DC-critical bias networks where speed < 200 kHz; avoid in USB or CAN FD interface protection. |
Compared with NSVBA116MUTAG and BAV99WQ-7-F, BAS116VY-QX uniquely balances 5 nA leakage, 0.8 µs trr, and AEC-Q101 compliance - making it optimal for automotive signal conditioning where both precision and speed constrain the design.
Availability
BAS116VY-QX is available at Aetrix Electronics and suitable for automotive engine control units, industrial sensor bias networks, infotainment USB protection, and medical patient monitor analog front-ends requiring stable component supply with full traceability and long-lifecycle support.
Supply support for BAS116VY-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.
The BAS116VY-QX belongs to Nexperia's AEC-Q101-qualified low-leakage diode product line, engineered specifically for precision signal routing and clamping in harsh-environment automotive and industrial electronics.
FAQ
Is BAS116VY-QX pin-compatible with BAS16 or BAV99 series diodes?
No. BAS116VY-QX uses a 6-pin SOT363-3 layout with three independent anode–cathode pairs (A1/K1, A2/K2, A3/K3), whereas BAS16 is a single diode in SOT23 and BAV99 is a dual diode in SOT363. Pin mapping and electrical isolation differ fundamentally - direct substitution requires PCB redesign.
What is the maximum continuous forward current per diode at 100 °C ambient?
At Tamb = 100 °C, the maximum continuous forward current per diode is derated to approximately 90 mA, based on Rth(j-a) = 500 K/W, Ptot = 250 mW, and Tj(max) = 150 °C. This assumes standard FR4 PCB mounting with single-sided copper and tin plating per Nexperia's thermal test condition.
Does BAS116VY-QX support wave soldering?
Yes. Nexperia provides a dedicated wave soldering footprint (sot363-3_fw) with 5.3 mm length, 1.3 mm width, and defined solder land geometry. Peak temperature must not exceed 260 °C for ≤5 seconds, and board orientation must follow the preferred transport direction indicated in Figure 8 of the datasheet.
How does reverse leakage change at elevated junction temperature?
Reverse leakage increases exponentially with temperature: typical IR is 3 nA at Tj = 150 °C (VR = 75 V), rising from 5 nA at 25 °C. The datasheet specifies a maximum of 80 nA at 150 °C, confirming stable performance in under-hood environments up to 125 °C ambient with appropriate thermal design.
BAS116VY-QX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 3 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io) (per Diode):
- 180mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAS116VY-QX FAQ
1.How can I place an order for BAS116VY-QX through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS116VY-QX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS116VY-QX reliable?
The price and inventory of BAS116VY-QX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116VY-QX is usually 5 days.
3.What payment methods are accepted for BAS116VY-QX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116VY-QX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS116VY-QX?
BAS116VY-QX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS116VY-QX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS116VY-QX?
For technical support, including BAS116VY-QX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116VY-QX requirements.
6.How does Aetrix verify that BAS116VY-QX is sourced from the original manufacturer or authorized distributors?
All BAS116VY-QX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116VY-QX meets industry standards.
7.What is the process for return or replacement of BAS116VY-QX?
All BAS116VY-QX units undergo pre-shipment inspection (PSI). If there is an issue with BAS116VY-QX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS116VY-QX part is unused and in its original packaging.
Return procedure for BAS116VY-QX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS116VY-QX Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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