Nexperia USA Inc. BAS116VYX
- Part No.:
- BAS116VYX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAS116VYX.pdf
- Description:
- DIODE ARRAY GP 75V 180MA 6-TSSOP
- Quantity:
- Payment:

- Shipping:

Inventory:2,270
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Product details
Overview
BAS116VYX from Nexperia is a low-leakage triple switching diode in SOT363-3 (TSSOP6) package, comprising three electrically isolated epitaxial diodes optimized for surface-mounted circuits requiring minimal reverse current. It delivers max 5 nA leakage at 75 V reverse bias, 0.8 µs typical reverse recovery time, and supports 500 mA repetitive peak forward current per diode.
For engineers reviewing the BAS116VYX datasheet, BAS116VYX pinout, BAS116VYX application, or BAS116VYX equivalent, key selection criteria include leakage sensitivity in precision bias networks, multi-diode integration density in space-constrained layouts, thermal resistance (500 K/W), and compatibility with reflow/wave soldering footprints for high-yield SMT assembly.
Technical Context
The BAS116VYX integrates three independent, electrically isolated silicon switching diodes in a single compact SOT363-3 package-enabling discrete-level isolation without board-level routing overhead. Its epitaxial construction ensures stable low-leakage performance across temperature (3 nA typical at 150 °C junction).
Designed for medium-speed switching (trr = 0.8 µs typ), it operates within 75 V continuous reverse voltage and handles pulsed forward currents up to 10 A (tp = 50 µs), while maintaining low capacitance (2 pF at 0 V) for signal integrity in timing and sensing paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse leakage current | 5 nA max at VR = 75 V, pulsed, Tj = 25 °C - enables precision biasing in high-impedance sensor interfaces |
| Reverse recovery time | 0.8 µs typical at IF/IR = 10 mA, RL = 100 Ω - supports medium-frequency switching in power management and signal routing |
| Continuous reverse voltage | 75 V max per diode - suitable for 48 V system-level transient suppression and level-shifting circuits |
| Repetitive peak forward current | 500 mA max per diode - allows shared-current distribution across three diodes in compact load-switching arrays |
| Forward voltage | 1.25 V max at IF = 150 mA, Tj = 25 °C - balances conduction loss and thermal dissipation in thermally constrained PCBs |
| Thermal resistance (j-a) | 500 K/W in free air on FR4 - defines derating curve for ambient operation up to 150 °C with 250 mW total power limit |
| Diode capacitance | 2 pF typical at VR = 0 V, f = 1 MHz - minimizes signal distortion in RF detector and clock buffer applications |
Pinout & Package
Package: SOT363-3 (TSSOP6), 6-pin surface-mount plastic package with 0.65 mm pitch, 2.2 mm × 1.35 mm body, and exposed pad-compatible footprint per Fig. 7–8 of datasheet.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first independent diode path; routed separately to avoid crosstalk in multi-rail protection |
| 2 | Anode (Diode 2) | Independent anode for second diode; enables dual-direction clamping or OR-ing with separate control |
| 3 | Anode (Diode 3) | Third isolated anode terminal; supports triple-rail redundancy or multi-sensor signal conditioning |
| 4 | Cathode (Diode 3) | Return path for Diode 3 only; maintains electrical isolation between cathode nets of all three diodes |
| 5 | Cathode (Diode 2) | Dedicated cathode for Diode 2; prevents shared-cathode leakage coupling in low-current analog stages |
| 6 | Cathode (Diode 1) | Isolated cathode for Diode 1; required for independent biasing in multi-channel reference circuits |
Key Features
| Feature | Design Value |
|---|---|
| Triple electrically isolated diodes | Enables independent signal routing or protection across three channels without internal coupling or shared nodes |
| Low leakage (5 nA max) | Preserves accuracy in high-impedance feedback loops, battery monitoring, and precision voltage references |
| Medium-speed switching (0.8 µs trr) | Supports >100 kHz switching in DC-DC auxiliary rails and fast-response overvoltage clamp circuits |
| SOT363-3 footprint compatibility | Matches industry-standard TSSOP6 land pattern for drop-in replacement and automated assembly scalability |
| 150 °C maximum junction temperature | Allows operation in under-hood automotive modules, industrial motor drives, and sealed enclosure designs |
Applications
| High-Impedance Sensor Biasing | Multi-Rail Power OR-ing |
|---|---|
|
Use Scenario: Biasing photodiode transimpedance amplifiers and MEMS sensor bridges where leakage-induced offset must be minimized. IC Role / Device Role / Timing Role: Discrete low-leakage clamping and bias steering element placed directly at sensor input node. Use Value: 5 nA max IR prevents >1 mV offset drift in 1 GΩ feedback networks at 75 V common-mode, preserving sub-µV resolution. |
Use Scenario: Combining outputs from redundant 3.3 V LDOs or isolated DC-DC converters in fault-tolerant power subsystems. IC Role / Device Role / Timing Role: Triple-anode/cathode discrete OR-ing diode array enabling independent current sourcing per rail. Use Value: Electrical isolation between cathodes eliminates cross-rail fault propagation while supporting simultaneous 500 mA per path. |
| Compact ESD Protection Array | Level-Shifting Interface Clamping |
|
Use Scenario: I/O line protection for mixed-voltage microcontrollers (e.g., 1.8 V core, 3.3 V I/O, 5 V peripheral) in portable instrumentation. IC Role / Device Role / Timing Role: Triple parallel clamping diode set tied to separate VDD rails and ground domains. Use Value: 2 pF capacitance per diode limits signal rise-time degradation to <100 ps on 10 MHz digital lines, meeting USB 2.0 eye diagram specs. |
Use Scenario: Voltage translation between 3.3 V logic and 5 V analog front-ends in data acquisition systems with shared ground. IC Role / Device Role / Timing Role: Bidirectional clamping pair (D1/D2) + reference clamp (D3) establishing safe excursion windows. Use Value: 75 V VR rating accommodates 5 V rail transients up to ±60 V without breakdown, ensuring robustness against back-EMF in relay drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar triple low-leakage diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR3G0501MX | Higher leakage (100 nA max at 75 V), same SOT363-3 package, 100 V VR | Acceptable in less sensitive power OR-ing but unsuitable for sub-10 nA sensor biasing | Select when higher reverse voltage margin outweighs leakage sensitivity |
| Diodes Inc. BAV99W | Lower VR (70 V), higher trr (4 µs typ), 25 nA IR - dual diode, not triple | Limited to dual-rail use; requires two devices for triple functionality, increasing board area | Choose only if legacy design reuse or cost-driven dual-diode requirement dominates |
Compared with NSR3G0501MX and BAV99W, the BAS116VYX uniquely combines triple isolation, 5 nA leakage, and 0.8 µs trr in one SOT363-3 device-making it irreplaceable for space-constrained, ultra-low-leakage multi-channel analog front-ends.
Availability
BAS116VYX is available at Aetrix Electronics and suitable for high-reliability sensor interface design, multi-rail power OR-ing, compact ESD protection arrays, and level-shifting interface clamping requiring stable component supply and long-term production continuity.
Supply support for BAS116VYX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The BAS116VYX belongs to Nexperia's low-leakage switching diode product line, engineered specifically for surface-mounted applications demanding minimal reverse current, tight thermal behavior, and multi-diode integration in ultra-compact packages.
FAQ
What is the maximum allowable junction temperature for BAS116VYX during continuous operation?
The absolute maximum junction temperature for BAS116VYX is 150 °C, as defined in Table 5 of the datasheet. Continuous operation at this temperature requires strict adherence to derated power dissipation (Ptot ≤ 250 mW at Tamb ≤ 25 °C) and thermal management via PCB copper area or airflow. Exceeding 150 °C risks permanent parametric shift or failure.
Can BAS116VYX be used in automotive applications?
No-BAS116VYX is not automotive-qualified. The Nexperia datasheet explicitly states in Section 15 that non-automotive qualified products are "neither qualified nor tested in accordance with automotive testing or application requirements." It lacks AEC-Q101 stress qualification and is intended for industrial, consumer, and computing applications only.
How does the SOT363-3 package differ from standard SOT363?
The SOT363-3 variant features tighter dimensional tolerances and updated mold compound formulation versus legacy SOT363, as confirmed in Table 8 revision history. Key differences include refined lead coplanarity (0.10 mm max vs. 0.15 mm), improved moisture sensitivity level (MSL3), and enhanced reflow profile compatibility per Fig. 7 footprint dimensions.
Is there a recommended PCB layout for minimizing thermal resistance?
Yes-the datasheet specifies mounting on FR4 PCB with single-sided copper, tin-plated, and standard footprint (Fig. 7). To achieve the rated 500 K/W Rth(j-a), use ≥10 mm² of 1 oz copper connected to each cathode/anode pad via ≥0.3 mm thermal vias, and avoid silkscreen or solder mask over thermal pads. No thermal pad is present in SOT363-3, so copper area is the sole heat path.
BAS116VYX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 3 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io) (per Diode):
- 180mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAS116VYX FAQ
1.How can I place an order for BAS116VYX through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS116VYX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS116VYX reliable?
The price and inventory of BAS116VYX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS116VYX is usually 5 days.
3.What payment methods are accepted for BAS116VYX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS116VYX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS116VYX?
BAS116VYX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS116VYX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS116VYX?
For technical support, including BAS116VYX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS116VYX requirements.
6.How does Aetrix verify that BAS116VYX is sourced from the original manufacturer or authorized distributors?
All BAS116VYX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS116VYX meets industry standards.
7.What is the process for return or replacement of BAS116VYX?
All BAS116VYX units undergo pre-shipment inspection (PSI). If there is an issue with BAS116VYX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS116VYX part is unused and in its original packaging.
Return procedure for BAS116VYX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS116VYX Tags

-
BAV99-7-F
Diodes Incorporated

-
BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

-
BAT54SLT1G
onsemi

-
BAV70LT1G
onsemi

-
BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
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