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Infineon Technologies BAS125-04WE6327
- Part No.:
- BAS125-04WE6327
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAS125-04WE6327.pdf
- Description:
- DIODE ARR SCHOTT 25V PG-SOT323-3
- Quantity:
- Payment:
- Shipping:
Inventory:30,200
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Product details
Overview
BAS125-04WE6327 from Infineon Technologies is a silicon Schottky diode in SOT323 package configured as a series-connected dual diode with common cathode, rated for 25 V reverse voltage, 100 mA forward current, and 250 mW total power dissipation at TS ≤ 84°C, used in low-loss clamping and bias isolation circuits for automotive metering and industrial sensor interfaces.
For engineers reviewing the BAS125-04WE6327 datasheet, BAS125-04WE6327 pinout, BAS125-04WE6327 application, or BAS125-04WE6327 equivalent, key selection criteria include VF matching (≤20 mV at 10 mA), low CT (1.1 pF at 0 V), IR ≤100 nA at 20 V, thermal resistance RthJS ≤365 K/W, and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual-series Schottky diode integrates a diffused guard ring to suppress edge breakdown and ensure stable reverse leakage across temperature. Its low forward voltage (typ. 530 mV at 10 mA) and fast recovery enable efficient signal clamping without significant conduction loss.
The device exhibits tight forward voltage matching (ΔVF ≤20 mV) between its two series diodes, critical for balanced current sharing in precision bias networks. Its 1.1 pF junction capacitance at 0 V supports high-frequency signal integrity in ESD protection and RF detector front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR (Reverse Voltage) | 25 V - Maximum blocking voltage before breakdown in clamping or isolation paths |
| IF (Forward Current) | 100 mA - Continuous DC current handling capability at TA = 25°C |
| VF @ 10 mA | 530 mV typ. - Low conduction loss enabling energy-efficient bias networks |
| IR @ 20 V | 100 nA max. - Minimal leakage ensuring accuracy in high-impedance sensing nodes |
| CT @ 0 V, 1 MHz | 1.1 pF - Low junction capacitance preserving bandwidth in RF and fast-switching applications |
| RthJS | ≤365 K/W - Thermal resistance from junction to soldering point, defining derating curve for surface-mount layout |
| ΔVF @ 10 mA | ≤20 mV - Tight matching between series diodes ensures balanced voltage division in dual-path designs |
Pinout & Package
SOT323 package: 3-pin plastic surface-mount package with gull-wing leads, 1.25 mm × 2.1 mm footprint, 0.9 mm height, and standard reel packaging (3,000 pcs/reel, ø180 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode 1 | Input node for first diode in series chain; connects to signal source or supply rail |
| Pin 2 | Cathode of Diode 1 / Anode of Diode 2 | Internal interconnect node - not externally accessible; defines series connection point |
| Pin 3 | Cathode of Diode 2 (Common Cathode) | Shared output node for both diodes; ties to reference or ground in clamping configurations |
Key Features
| Feature | Design Value |
|---|---|
| Integrated diffused guard ring | Suppresses edge leakage and improves VR stability under temperature and voltage stress |
| AEC-Q101 qualified | Validated for automotive applications including instrument cluster and body control modules |
| Pb-free (RoHS compliant) | Meets EU Directive 2011/65/EU; no lead content in termination or die attach |
| Low VF matching (ΔVF ≤20 mV) | Enables precise dual-diode voltage division without external trimming in bias networks |
| ESD-sensitive handling | Requires IEC 61340-5-1 compliant handling to prevent gate oxide damage during assembly |
Applications
| Automotive Instrument Clamping | Industrial Sensor Bias Isolation |
|---|---|
Use Scenario: Protecting analog inputs of digital vehicle speedometers and fuel gauges from transients induced by ignition switching or load dump. IC Role / Device Role / Timing Role: Dual-series Schottky clamp limiting input voltage to ±0.8 V while maintaining high-impedance signal path integrity. Use Value: Prevents ADC saturation and latch-up with <100 nA leakage at 20 V, ensuring measurement continuity during 100 ns spikes. | Use Scenario: Providing matched bias current to dual-output RTD or thermistor bridges in programmable logic controller (PLC) analog input modules. IC Role / Device Role / Timing Role: Series-connected diode pair delivering identical forward drop to both bridge legs for offset cancellation. Use Value: ΔVF ≤20 mV enables <0.1% gain error contribution across –40°C to +125°C operating range. |
| RF Detector Front-End | Low-Power Meter Protection |
Use Scenario: Rectifying weak RF signals (1–100 MHz) in battery-powered wireless sensor node RSSI detectors. IC Role / Device Role / Timing Role: Low-CT (1.1 pF), low-RF (15 Ω) Schottky element converting AC envelope to DC with minimal phase distortion. Use Value: Enables detection sensitivity down to –20 dBm with <3 dB insertion loss due to low parasitic capacitance and series resistance. | Use Scenario: Safeguarding microcontroller GPIO pins in smart electricity meters exposed to surge events per IEC 61000-4-5 Level 3 (2 kV line-earth). IC Role / Device Role / Timing Role: Fast-recovery clamping diode shunting transient energy away from ESD-sensitive interface circuitry. Use Value: Withstands 500 mA non-repetitive surge (IFSM) and recovers in <10 ns, preventing latch-up during 1.2/50 µs surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode clamping applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STMicroelectronics BAT54C | Single common-cathode dual diode; VF = 370 mV typ. @ 10 mA; CT = 10 pF @ 0 V | Higher capacitance limits use above 10 MHz; lacks AEC-Q101 qualification | Prefer for cost-sensitive consumer applications where RF performance is secondary |
| ON Semiconductor NSR0230P2T5G | Single Schottky; VF = 360 mV typ. @ 10 mA; IR = 200 nA @ 25 V; no dual configuration | No internal series pairing; requires external layout for matched bias paths | Select when discrete placement flexibility outweighs integrated matching benefits |
Compared with BAT54C and NSR0230P2T5G, BAS125-04WE6327 uniquely delivers AEC-Q101 qualification, sub-1.2 pF capacitance, and factory-matched ΔVF ≤20 mV in a single SOT323 package-critical for automotive metering and precision industrial biasing where layout area and parametric consistency are constrained.
Availability
BAS125-04WE6327 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLC analog input modules, and RF detector front-ends requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for BAS125-04WE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.
The BAS125 series belongs to Infineon's automotive-qualified discrete Schottky portfolio, designed specifically for robust clamping, biasing, and protection in harsh-environment metering and sensor interface applications.
FAQ
What is the maximum junction temperature for BAS125-04WE6327?
The absolute maximum junction temperature (Tj) is 150°C, validated per AEC-Q101 stress testing. Operation above this limit risks irreversible degradation of the Schottky barrier and increased IR. Derating curves in the datasheet define safe IF vs. TS operation up to 84°C case temperature.
Is BAS125-04WE6327 suitable for bidirectional ESD protection?
No - it is a unidirectional Schottky diode configured in series with common cathode. It provides forward-biased clamping only from anode to cathode. For bidirectional ESD protection, a TVS diode array or back-to-back Schottky configuration is required.
How does the SOT323 package affect thermal performance?
The SOT323 package delivers RthJS ≤365 K/W to the soldering point, enabling 250 mW power dissipation only when mounted on ≥100 mm² copper pour with ≥2 thermal vias. Without adequate PCB copper, derating to ≤120 mW is required above 60°C ambient.
What marking code identifies BAS125-04WE6327 on the device?
The top-side laser marking is "14s", consistent with Infineon's SOT323 Schottky family coding. This matches the "BAS125-04W" type designation in the datasheet and distinguishes it from BAS125-05W ("15s"), BAS125-06W ("16s"), and BAS125-07W ("17s").
BAS125-04WE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 25 V
- Current - Average Rectified (Io) (per Diode):
- 100mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 950 mV @ 35 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 nA @ 25 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323-3
BAS125-04WE6327 FAQ
1.How can I place an order for BAS125-04WE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS125-04WE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS125-04WE6327 reliable?
The price and inventory of BAS125-04WE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS125-04WE6327 is usually 5 days.
3.What payment methods are accepted for BAS125-04WE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS125-04WE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS125-04WE6327?
BAS125-04WE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS125-04WE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS125-04WE6327?
For technical support, including BAS125-04WE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS125-04WE6327 requirements.
6.How does Aetrix verify that BAS125-04WE6327 is sourced from the original manufacturer or authorized distributors?
All BAS125-04WE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS125-04WE6327 meets industry standards.
7.What is the process for return or replacement of BAS125-04WE6327?
All BAS125-04WE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BAS125-04WE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS125-04WE6327 part is unused and in its original packaging.
Return procedure for BAS125-04WE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS125-04WE6327 Tags
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