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Infineon Technologies BAS12505WH6327XTSA1
- Part No.:
- BAS12505WH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAS12505WH6327XTSA1.pdf
- Description:
- DIODE ARR SCHOT 25V 100MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:6,721
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Product details
Overview
BAS12505WH6327XTSA1 from Infineon Technologies is a dual-channel silicon Schottky diode in SOT323 package configured as a common-anode pair, rated for 25 V reverse voltage, 100 mA forward current, and 250 mW power dissipation at TS ≤ 76°C, used for bias isolation and clamping in automotive sensor signal conditioning circuits.
For engineers reviewing the BAS12505WH6327XTSA1 datasheet, BAS12505WH6327XTSA1 pinout, BAS12505WH6327XTSA1 application, or BAS12505WH6327XTSA1 equivalent, key selection criteria include VF matching (≤20 mV at 10 mA), low CT (1.1 pF @ 0 V), IR ≤150 nA @ 25 V, thermal resistance RthJS ≤295 K/W, and AEC-Q101 qualification for automotive reliability.
Technical Context
This dual Schottky diode integrates a diffused guard ring to suppress edge leakage and ensure stable reverse characteristics across temperature. Its common-anode configuration enables symmetrical clamping of bidirectional transients in differential analog front-ends.
Designed for low-loss operation, it delivers VF = 400–650 mV at 10 mA with tight matching (ΔVF ≤20 mV), and exhibits CT = 1.1 pF at 0 V / 1 MHz - critical for high-frequency signal integrity in CAN/LIN bus interface protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 25 V - supports clamping of 24 V automotive supply transients without breakdown |
| Forward Current (IF) | 100 mA DC - sufficient for biasing sensor bridges and active load switches |
| Forward Voltage (VF) | 400–650 mV @ 10 mA - minimizes conduction loss in low-voltage signal paths |
| Diode Capacitance (CT) | 1.1 pF @ 0 V, 1 MHz - preserves bandwidth in >100 MHz RF-coupled sensor interfaces |
| Reverse Current (IR) | ≤150 nA @ 25 V - ensures negligible leakage in precision voltage reference networks |
| Thermal Resistance (RthJS) | ≤295 K/W - enables sustained 100 mA operation with junction temperature ≤150°C at TS ≤76°C |
| VF Matching (ΔVF) | ≤20 mV @ 10 mA - guarantees balanced clamping thresholds across dual channels |
Pinout & Package
Supplied in SOT323 (SC-70) plastic surface-mount package, 1.25 mm × 2.1 mm footprint, 0.9 mm height, with gull-wing leads and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | Input node for first Schottky junction; connects to protected signal line A |
| Pin 2 | Cathode (common) | Shared cathode node tied to reference rail (e.g., VCC or ground); defines clamping polarity |
| Pin 3 | Anode 2 | Input node for second Schottky junction; connects to protected signal line B |
Key Features
| Feature | Design Value |
|---|---|
| Common-anode dual configuration | Enables bidirectional transient suppression on differential pairs without external wiring |
| Integrated diffused guard ring | Reduces edge leakage by >5× vs. non-guarded Schottkys, improving IR stability over temperature |
| AEC-Q101 qualified | Validated for automotive under-hood applications including engine control and ADAS sensor modules |
| Pb-free RoHS-compliant packaging | Meets EU Directive 2011/65/EU and J-STD-020 moisture sensitivity level 1 handling requirements |
Applications
| Automotive Sensor Clamping | Low-Voltage Bias Isolation |
|---|---|
Use Scenario: Protecting LIN bus transceiver inputs from load-dump-induced voltage spikes in body control modules. IC Role / Device Role / Timing Role: Dual Schottky clamp limiting input swing to VCC + 0.7 V and GND − 0.3 V. Use Value: Prevents latch-up in 5 V tolerant transceivers while adding <0.5 ns propagation delay due to CT = 1.1 pF. | Use Scenario: Isolating bias current paths in dual-output current-sense amplifiers for battery management systems. IC Role / Device Role / Timing Role: Common-anode diode pair blocking reverse current between parallel sense resistors. Use Value: Achieves <1 µA inter-channel leakage at 25°C (IR ≤150 nA), preserving measurement accuracy. |
| High-Speed Meter Protection | Differential Signal Clamping |
Use Scenario: Safeguarding ADC inputs in smart electricity meters exposed to EFT bursts per IEC 61000-4-4. IC Role / Device Role / Timing Role: Fast-recovery Schottky clamp diverting surge energy before internal ESD structures trigger. Use Value: Responds within <1 ns (RF = 15 Ω) to limit transient overshoot to <300 mV above rail. | Use Scenario: Clamping common-mode noise on RS-485 receiver inputs in industrial PLC backplanes. IC Role / Device Role / Timing Role: Symmetric dual clamp referenced to VCC/2, maintaining differential integrity. Use Value: ΔVF ≤20 mV ensures <±10 mV threshold mismatch, preventing false logic transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSR20F30NXT5G | Single-diode SOD-523 package; no VF matching spec; VF = 370 mV typ @ 10 mA | Lacks dual-channel integration; requires two devices and layout symmetry for matched clamping | Prefer when board space allows discrete placement and matching is managed externally |
| RB521S-40T1G | Common-cathode dual; VF = 370 mV max @ 10 mA; CT = 1.5 pF @ 0 V | Inverts clamping polarity - cathodes tied together, anodes separate - unsuitable for common-anode bias schemes | Select only if circuit topology uses cathode-referenced clamping and higher capacitance is acceptable |
Compared with NSR20F30NXT5G and RB521S-40T1G, BAS12505WH6327XTSA1 uniquely provides AEC-Q101-qualified common-anode topology with guaranteed ΔVF ≤20 mV and lower CT, making it optimal for automotive differential signal protection where channel matching and bandwidth are critical.
Availability
BAS12505WH6327XTSA1 is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial metering systems, and low-voltage bias isolation circuits requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for BAS12505WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949.
This device belongs to Infineon's BAS125 series of AEC-Q101-qualified Schottky diodes, engineered specifically for robust signal-level protection and bias control in harsh automotive environments.
FAQ
What is the maximum junction temperature and how is it related to the specified TS limit?
The absolute maximum junction temperature (Tj) is 150°C. The TS ≤76°C rating specifies the maximum solder-point temperature allowed to maintain Ptot = 250 mW without exceeding Tj, based on RthJS ≤295 K/W. Exceeding TS reduces allowable IF proportionally per the derating curve in Figure 4.
Is BAS12505WH6327XTSA1 suitable for USB data line ESD protection?
No - this device is not optimized for IEC 61000-4-2 ESD protection. It lacks specified contact discharge ratings and has CT = 1.1 pF, which exceeds typical USB 2.0 (<0.4 pF) requirements. Dedicated ESD arrays like ESD204 or USBLC6-2SC6 are recommended instead.
How does the diffused guard ring improve performance compared to standard Schottky diodes?
The integrated diffused guard ring suppresses surface leakage currents at the Si/SiO₂ interface, reducing IR by up to 80% at 125°C and stabilizing VF over temperature. This yields tighter ΔVF matching and improved long-term reliability in humid, high-bias automotive environments.
Can BAS12505WH6327XTSA1 be used in place of BAS125-04W or BAS125-06W?
No - BAS12505WH6327XTSA1 corresponds to the BAS125-05W variant (common-anode SOT323). BAS125-04W and -06W are common-cathode and series configurations respectively; substituting them would invert clamping polarity or break circuit functionality without redesign.
BAS12505WH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 25 V
- Current - Average Rectified (Io) (per Diode):
- 100mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 950 mV @ 35 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 nA @ 25 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323
BAS12505WH6327XTSA1 FAQ
1.How can I place an order for BAS12505WH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS12505WH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS12505WH6327XTSA1 reliable?
The price and inventory of BAS12505WH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS12505WH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BAS12505WH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS12505WH6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS12505WH6327XTSA1?
BAS12505WH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS12505WH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS12505WH6327XTSA1?
For technical support, including BAS12505WH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS12505WH6327XTSA1 requirements.
6.How does Aetrix verify that BAS12505WH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BAS12505WH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS12505WH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BAS12505WH6327XTSA1?
All BAS12505WH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAS12505WH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS12505WH6327XTSA1 part is unused and in its original packaging.
Return procedure for BAS12505WH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS12505WH6327XTSA1 Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
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BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
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BAV70LT1G
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BAT54CLT1G
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
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