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Infineon Technologies BAS12507WE6327HTSA1

Part No.:
BAS12507WE6327HTSA1
Manufacturer:
Infineon Technologies
Category:
Diode Arrays
Package:
SC-82A, SOT-343
Datasheet:
AetrixBAS12507WE6327HTSA1.pdf
Description:
DIODE ARR SCHOTT 25V SOT343-3D
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,732

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Product details

Overview

BAS12507WE6327HTSA1 from Infineon Technologies is a silicon Schottky diode in SOT343 package configured as a parallel pair, rated for 25 V reverse voltage, 100 mA forward current, and 250 mW power dissipation at TS ≤ 96°C, with typical forward voltage of 650 mV at 10 mA - used in low-loss clamping and bias isolation circuits in automotive metering and sensor signal conditioning.

For engineers reviewing the BAS12507WE6327HTSA1 datasheet, BAS12507WE6327HTSA1 pinout, BAS12507WE6327HTSA1 application, or BAS12507WE6327HTSA1 equivalent, key selection criteria include VF matching (≤20 mV), low CT (1.1 pF @ 0 V), differential forward resistance (15 Ω @ 5 mA), AEC-Q101 qualification, and RoHS-compliant SOT343 packaging.

Technical Context

This dual-diode configuration operates as a parallel pair to increase current handling while maintaining matched forward characteristics - critical for precision bias networks and symmetrical clamping paths. Its 1.6 nH series inductance and 1.1 pF capacitance at 0 V/1 MHz support high-frequency transient suppression up to ~300 MHz.

The device features an integrated diffused guard ring for improved voltage standoff stability and ESD robustness (ESD-sensitive handling required). Thermal resistance RthJS ≤ 215 K/W enables reliable operation at junction temperatures up to 150°C under controlled board-level thermal management.

Key Specifications

ParameterValue and Actual Design Meaning
VR (Reverse Voltage)25 V - supports rail-to-rail clamping in 24 V automotive sensor interfaces without breakdown
IF (Forward Current)100 mA DC - sufficient for biasing op-amp input protection networks or LED driver feedback paths
VF @ 10 mA650 mV typ. - minimizes conduction loss in low-voltage analog front-ends
∆VF @ 10 mA≤20 mV - ensures matched conduction across parallel diodes in differential signal paths
CT @ 0 V, 1 MHz1.1 pF - preserves signal integrity in >100 MHz RF detector or fast-switching clamp applications
RthJS≤215 K/W - allows direct thermal coupling to PCB copper for sustained 100 mA operation at TS ≤ 96°C
IR @ 25 V150 nA max. - prevents leakage-induced offset drift in high-impedance bias nodes

Pinout & Package

SOT343 package: 4-pin plastic surface-mount package with gull-wing leads, 1.3 mm × 1.1 mm footprint, 0.95 mm height, and moisture sensitivity level 1 (MSL1).

Pin/TerminalCircuit RoleDesign Meaning
1Anode 1Primary anode connection for first diode element in parallel pair
2CathodeShared cathode node - internal connection point for both diodes
3Anode 2Second anode connection enabling true parallel conduction path
4No ConnectInternally unconnected; electrically isolated per datasheet marking layout

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive under-hood applications including temperature cycling, humidity, and mechanical shock
Low VF matching (∆VF ≤ 20 mV)Enables balanced current sharing in parallel configurations without external trimming resistors
Integrated diffused guard ringImproves edge termination reliability and reduces field crowding at high VR stress
Pb-free, RoHS-compliantMeets EU Directive 2011/65/EU and supports lead-free reflow soldering profiles (JEDEC J-STD-020)

Applications

Automotive Instrument Cluster ProtectionIndustrial Sensor Signal Clamping

Use Scenario: Protects analog inputs of microcontroller-based gauges from load-dump transients and ESD events in 12 V vehicle systems.

IC Role / Device Role / Timing Role: Dual Schottky clamp limiting voltage excursions to ≤0.7 V above rail and ≤0.7 V below ground.

Use Value: Prevents latch-up in 3.3 V ADC front-ends while maintaining <1.1 pF loading on 100 kHz sensor signals.

Use Scenario: Shields precision op-amp inputs in 4–20 mA loop receivers from field-wiring surge and polarity reversal.

IC Role / Device Role / Timing Role: Parallel-pair diode providing bidirectional rail-to-rail clamping with matched VF for symmetric clipping.

Use Value: Delivers ≤20 mV VF mismatch to avoid common-mode error in differential input stages during overvoltage events.

Portable Medical Device Bias IsolationHigh-Frequency RF Detector Clamp

Use Scenario: Isolates bias voltage for photodiode transimpedance amplifiers in battery-powered pulse oximeters.

IC Role / Device Role / Timing Role: Low-leakage (150 nA max.) Schottky barrier preventing dark-current injection into high-Z nodes.

Use Value: Maintains sub-100 nA input bias current integrity while supporting 25 V isolation margin against ESD pulses.

Use Scenario: Front-end clamp in 2.4 GHz ISM-band RF power detectors to limit envelope detector diode swing.

IC Role / Device Role / Timing Role: Ultra-low-capacitance (1.1 pF) parallel diode preserving detector bandwidth beyond 300 MHz.

Use Value: Enables accurate peak detection without degrading rise time due to parasitic capacitance loading.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode clamp and bias isolation applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
RB050M-30TRSingle diode, SOD-323, 30 V VR, 500 mA IF, VF = 550 mV @ 100 mALacks VF matching and parallel configuration; higher IF but no dual-element symmetryPreferred where higher surge current matters more than matched clamping
NSR0230P2T5GSingle diode, SOD-523, 30 V VR, 200 mA IF, VF = 450 mV @ 10 mA, CT = 1.5 pFSmaller package, lower VF, but no dual-element structure or AEC-Q101 ratingUsed in space-constrained consumer electronics where automotive qualification is not required

Compared with BAS12507WE6327HTSA1, RB050M-30TR offers higher surge tolerance but lacks matched dual-diode architecture, while NSR0230P2T5G provides lower VF and smaller footprint but omits AEC-Q101 validation and VF matching - making BAS12507WE6327HTSA1 uniquely suited for automotive-grade symmetrical clamping.

Availability

BAS12507WE6327HTSA1 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial 4–20 mA transmitters, portable medical sensor modules, and RF detector front-ends requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BAS12507WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This device belongs to Infineon's BAS125 family of AEC-Q101-qualified Schottky diodes designed specifically for low-loss, high-reliability clamping and bias isolation in automotive and industrial signal-path protection.

FAQ

What is the maximum allowable junction temperature for BAS12507WE6327HTSA1?

The absolute maximum junction temperature is 150°C, as specified in the Infineon datasheet. Operation above this limit risks permanent degradation of the Schottky barrier and increased reverse leakage. Derating curves show that continuous 100 mA operation requires heatsinking to maintain TS ≤ 96°C.

Is BAS12507WE6327HTSA1 pin-compatible with other BAS125 variants?

No - BAS12507WE6327HTSA1 uses SOT343 with a 4-pin parallel-pair configuration, whereas BAS125-04W/05W/06W use SOT323 with series common-cathode or common-anode arrangements. Pin count, footprint, and internal topology differ; direct substitution is not supported.

Does this part require special handling due to ESD sensitivity?

Yes - the datasheet explicitly states it is an ESD-sensitive device. Handling requires grounded wrist straps, conductive foam storage, and ionized air workstations. The device has no on-chip ESD protection; its thin Schottky junction is vulnerable to <2 kV HBM discharge without precautions.

Can BAS12507WE6327HTSA1 be used in AC signal rectification?

No - it is optimized for clamping, bias isolation, and transient suppression, not rectification. Its 100 mA DC rating and lack of specified reverse recovery time (trr) or soft-recovery behavior make it unsuitable for line-frequency or switching-power rectifier applications where charge storage and reverse recovery losses matter.

BAS12507WE6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-82A, SOT-343
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Diode Configuration:
2 Independent
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
25 V
Current - Average Rectified (Io) (per Diode):
100mA (DC)
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 35 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
150 nA @ 25 V
Operating Temperature - Junction:
150°C (Max)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT343-3D

BAS12507WE6327HTSA1 FAQ

1.How can I place an order for BAS12507WE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS12507WE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS12507WE6327HTSA1 reliable?

The price and inventory of BAS12507WE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS12507WE6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BAS12507WE6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS12507WE6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS12507WE6327HTSA1?

BAS12507WE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS12507WE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS12507WE6327HTSA1?

For technical support, including BAS12507WE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS12507WE6327HTSA1 requirements.

6.How does Aetrix verify that BAS12507WE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BAS12507WE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS12507WE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BAS12507WE6327HTSA1?

All BAS12507WE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAS12507WE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS12507WE6327HTSA1 part is unused and in its original packaging.

Return procedure for BAS12507WE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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