Diodes Incorporated BAS16HLPQ-7B

Overview

BAS16HLPQ-7B from Diodes Incorporated is an AEC-Q101 qualified ultra-small surface-mount fast switching diode in X1-DFN1006-2 package, featuring 100 V peak repetitive reverse voltage, 4.0 ns reverse recovery time, and 215 mA forward continuous current. It serves as a general-purpose high-speed switching element in automotive signal routing, ESD-protected I/O clamping, and low-power logic-level translation circuits.

For engineers reviewing the BAS16HLPQ-7B datasheet, BAS16HLPQ-7B pinout, BAS16HLPQ-7B application, or BAS16HLPQ-7B equivalent, key selection criteria include its 1.5 pF junction capacitance at 0 V, 0.855 V forward voltage at 10 mA, 500 °C/W thermal resistance, and automotive-grade reliability qualification under AEC-Q101.

Technical Context

This discrete silicon switching diode uses a planar epitaxial construction optimized for fast charge-carrier recombination, enabling sub-5 ns reverse recovery. Its low 1.5 pF junction capacitance and 0.715–1.25 V forward voltage range across 1–150 mA support high-frequency signal integrity in compact automotive and portable electronics layouts.

The device operates from −65 °C to +150 °C with 100 µA max reverse leakage at 80 V and 25 °C, and derates linearly to 0 mW at 150 °C ambient per its 250 mW rated power dissipation on FR-4 board with recommended pad layout.

Key Specifications

Pinout & Package

Package: X1-DFN1006-2 - ultra-compact 1.0 mm × 0.6 mm, 0.5 mm height, 2-terminal leadless plastic package with NiPdAu-plated copper leadframe and UL 94V-0 molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast switching diode applications.

Compared with BAS16W-7-F and 1N4148W-7-F, the BAS16HLPQ-7B delivers identical electrical performance in a 60% smaller footprint with automotive qualification-critical for next-gen ADAS sensor nodes and compact ECU designs where board space and reliability are jointly constrained.

Availability

BAS16HLPQ-7B is available at Aetrix Electronics and suitable for automotive body electronics, USB interface protection, low-power IoT sensor nodes, and industrial PLC input conditioning requiring stable component supply across multi-year production cycles.

Supply support for BAS16HLPQ-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAS16HLPQ belongs to Diodes' AEC-Q101-qualified fast switching diode product line, engineered specifically for high-reliability automotive signal routing, ESD protection, and logic-level interface applications where miniaturization and thermal robustness are critical.

FAQ

What is the cathode identification method for BAS16HLPQ-7B?

The cathode is marked by a bar on the top surface of the X1-DFN1006-2 package. Pin 2 (cathode) is electrically connected to this marked side, while Pin 1 (anode) occupies the opposite end. The marking aligns with JEDEC-standard DFN orientation and is visible under 10× magnification during visual inspection or automated optical recognition.

Does BAS16HLPQ-7B support reflow soldering per JEDEC J-STD-020?

Yes, BAS16HLPQ-7B is rated Moisture Sensitivity Level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30 °C/60% RH and subjected to standard Pb-free reflow profiles (peak 260 °C, 30 seconds max) without baking. Its NiPdAu terminal finish ensures consistent wetting and intermetallic formation during both leaded and lead-free processes.

How does the 500 °C/W R_θJA affect PCB layout?

The 500 °C/W thermal resistance assumes mounting on a standard FR-4 board with Diodes' recommended pad layout (0.7 mm × 0.3 mm thermal pad, 0.4 mm clearance). To maintain T_J ≤150 °C at 215 mA, ambient must stay below 85 °C unless additional copper pour or thermal vias are added-especially critical in sealed automotive enclosures.

Can BAS16HLPQ-7B replace BAT54S in dual-diode configurations?

No-BAS16HLPQ-7B is a single diode in a 2-terminal DFN package, whereas BAT54S is a dual-series Schottky in SOT-363. While both offer fast switching, the BAS16HLPQ-7B lacks the dual-channel topology and Schottky's lower V_F. For dual-function needs, Diodes' BAS21DW-7-F (dual high-voltage switching) is a functionally aligned alternative.