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Nexperia USA Inc. BAS16L,315

Part No.:
BAS16L,315
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
SOD-882
Datasheet:
AetrixBAS16L,315.pdf
Description:
DIODE GP 100V 215MA DFN1006-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:133,278

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Product details

Overview

BAS16L,315 from Nexperia is a high-speed switching diode in an ultra-small DFN1006-2 (SOD882) package, rated for 100 V repetitive peak reverse voltage, 4 ns reverse recovery time, and 215 mA continuous forward current. It serves as a fast-turn-off signal path switch in digital logic interfaces and level-shifting circuits operating up to 100 MHz.

For engineers reviewing the BAS16L,315 datasheet, BAS16L,315 pinout, BAS16L,315 application, or BAS16L,315 equivalent, key selection criteria include trr ≤ 4 ns at IF = 10 mA, VR = 100 V rating, low 1.5 pF capacitance at 0 V, and compatibility with reflow-soldered 0.65 mm pitch layouts on FR4 PCBs.

Technical Context

This diode uses a planar epitaxial silicon structure optimized for minimal minority-carrier storage, enabling sub-4 ns reverse recovery under standardized 10 mA/10 mA test conditions with 100 Ω load and 1 mA measurement threshold. Its low 1.5 pF junction capacitance at 0 V supports RF-coupled signal routing up to UHF bands.

The device operates across −65 °C to +150 °C ambient, with thermal resistance Rth(j-a) = 500 K/W on FR4, and maintains leakage below 0.5 µA at 80 V and 25 °C - critical for battery-powered signal gating where standby current must remain sub-microamp.

Key Specifications

Parameter Value and Actual Design Meaning
VR / VRRM 100 V - supports 24 V industrial bus clamping and 48 V telecom line protection without derating
trr 4 ns - enables clean edge transitions in >100 MHz clock distribution and pulse shaping networks
IF(max) 215 mA - sufficient for driving TTL/CMOS inputs and small-signal relay coils
Cd 1.5 pF at 0 V - minimizes capacitive loading on high-impedance analog switches and RF detector nodes
IR 0.5 µA at 80 V, 25 °C - ensures <10 nW standby power loss in always-on sensor wake-up paths
VF 855 mV at 10 mA - provides low forward drop for bidirectional level translation with minimal voltage offset
Ptot 250 mW at Tamb ≤ 25 °C - allows operation without heatsinking in compact SMT layouts

Pinout & Package

Package: DFN1006-2 (SOD882), leadless ultra-small plastic package, 1.0 mm × 0.6 mm × 0.48 mm body, 0.65 mm pitch, cathode marked with "S2" on top surface.

Pin/Terminal Circuit Role Design Meaning
1 K (cathode) Connected to higher-potential node during forward conduction; defines polarity for ESD protection and clamp orientation
2 A (anode) Connected to lower-potential node; terminal where forward current enters; used for series insertion in signal return paths

Key Features

Feature Design Value
High-speed switching trr ≤ 4 ns enables use in 100+ MHz digital isolators and pulse-width modulated gate drivers
Low junction capacitance 1.5 pF at 0 V preserves signal integrity in RF sampling circuits and high-frequency envelope detectors
Low leakage current 0.5 µA max at 80 V ensures stable biasing in precision comparator reference legs and battery monitor dividers
Ultra-small footprint DFN1006-2 (1.0 × 0.6 mm) supports dense routing in space-constrained IoT sensor nodes and wearable PCBs
Reflow-compatible Qualified for standard SnPb and Pb-free reflow profiles per J-STD-020; no special solder mask or stencil adjustments needed

Applications

USB 2.0 Data Line Protection Logic-Level Translation

Use Scenario: Bidirectional ESD protection and DC blocking on D+/D− lines between host and peripheral ICs.

IC Role / Device Role / Timing Role: Signal-path diode providing fast clamping and low-capacitance isolation between 3.3 V and 5 V domains.

Use Value: 1.5 pF capacitance avoids USB 2.0 eye diagram degradation; 4 ns trr prevents data pulse distortion at 480 Mbps.

Use Scenario: Level shifting between 1.8 V microcontroller GPIOs and 3.3 V sensor interface lines.

IC Role / Device Role / Timing Role: Passive open-drain translator using forward conduction to pull up or isolate signals.

Use Value: 855 mV VF at 10 mA ensures accurate logic thresholds; 0.5 µA IR prevents false triggering in sleep mode.

RF Detector Input Stage High-Speed Pulse Gating

Use Scenario: Demodulating AM-modulated RF carriers in 868 MHz ISM band receivers.

IC Role / Device Role / Timing Role: Low-Cd envelope detector diode rectifying RF peaks into baseband voltage.

Use Value: 1.5 pF capacitance extends usable frequency range beyond 1 GHz; low VF improves detection sensitivity.

Use Scenario: Gating 50 ns laser driver pulses in optical time-of-flight modules.

IC Role / Device Role / Timing Role: Fast turn-off switch enabling precise pulse width control in current-source paths.

Use Value: 4 ns trr limits pulse tailing to <1% of 50 ns width; 100 V rating withstands inductive kickback from driver FETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed switching diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N4148W-7-F DO-214AC (SOD-123) package; trr = 4 ns; VF = 1.0 V @ 10 mA; Cd = 4 pF @ 0 V Larger footprint (3.7 × 1.6 mm); higher capacitance reduces RF performance above 500 MHz Select when board layout allows larger SMD and RF bandwidth < 500 MHz is acceptable
BAS216,315 Same DFN1006-2 package; trr = 3.5 ns; VR = 200 V; VF = 900 mV @ 10 mA; Cd = 1.2 pF Higher reverse voltage enables 48 V PoE line protection; slightly slower VF rise time affects low-current logic levels Select when >100 V standoff or tighter trr tolerance is required, accepting minor VF increase

Compared with BAS16L,315, the 1N4148W-7-F trades size for legacy compatibility and higher capacitance, while the BAS216,315 offers enhanced voltage margin and faster recovery at the cost of marginally higher forward drop - both require layout or timing validation before drop-in replacement.

Availability

BAS16L,315 is available at Aetrix Electronics and suitable for high-speed switching, general-purpose signal routing, and ESD protection applications requiring stable component supply and consistent parametric performance across production batches.

Supply support for BAS16L,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

The BAS16L belongs to Nexperia's high-speed switching diode product line, engineered for minimal trr and Cd in ultra-compact packages to meet demands of portable, high-frequency, and space-constrained electronic systems.

FAQ

What is the maximum allowable junction temperature for BAS16L,315?

The absolute maximum junction temperature (Tj) is 150 °C, as defined in IEC 60134 limiting values. Operation at this limit requires thermal design ensuring Rth(j-a) ≤ 500 K/W on FR4 with 60 µm copper traces. Derating is recommended above 125 °C for long-term reliability.

Can BAS16L,315 be used in automotive applications?

No - the BAS16L,315 is explicitly non-automotive qualified per Nexperia's revision history. It lacks AEC-Q101 qualification and automotive-specific testing. For automotive use, Nexperia recommends the BAS16J-Q or BAS16H-Q variants, which undergo full automotive stress screening.

Is the cathode marking visible on the top surface of BAS16L,315?

Yes - the cathode is marked with "S2" on the top surface of the DFN1006-2 package, aligned with pin 1 per the simplified outline in Figure 7. This marking is laser-etched and visible under 10× magnification, enabling automated optical inspection during assembly.

What is the recommended reflow profile for BAS16L,315?

Nexperia qualifies BAS16L,315 for standard Pb-free reflow per J-STD-020, with peak temperature ≤ 260 °C and time above liquidus (TAL) of 60–150 seconds. The footprint in Figure 8 specifies 0.3 mm wide solder lands and 0.7 mm pad length for optimal wetting and void control.

BAS16L,315 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
BAS16
Package/Case:
SOD-882
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
215mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
4 ns
Current - Reverse Leakage @ Vr:
500 nA @ 80 V
Capacitance @ Vr, F:
1.5pF @ 0V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DFN1006-2
Operating Temperature - Junction:
150°C (Max)

BAS16L,315 FAQ

1.How can I place an order for BAS16L,315 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS16L,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS16L,315 reliable?

The price and inventory of BAS16L,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS16L,315 is usually 5 days.

3.What payment methods are accepted for BAS16L,315?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS16L,315 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS16L,315?

BAS16L,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS16L,315 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS16L,315?

For technical support, including BAS16L,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS16L,315 requirements.

6.How does Aetrix verify that BAS16L,315 is sourced from the original manufacturer or authorized distributors?

All BAS16L,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS16L,315 meets industry standards.

7.What is the process for return or replacement of BAS16L,315?

All BAS16L,315 units undergo pre-shipment inspection (PSI). If there is an issue with BAS16L,315, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS16L,315 part is unused and in its original packaging.

Return procedure for BAS16L,315:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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