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Infineon Technologies BAS16SE6327BTSA1
- Part No.:
- BAS16SE6327BTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BAS16SE6327BTSA1.pdf
- Description:
- DIODE ARR GP 80V 200MA SOT363-PO
- Quantity:
- Payment:
- Shipping:
Inventory:6,777
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Product details
Overview
BAS16SE6327BTSA1 from Infineon Technologies is a silicon switching diode in SOT-23 package, rated for 80 V reverse voltage, 250 mA forward current, and 4 ns reverse recovery time, designed for high-speed signal routing and clamping in automotive body electronics and industrial control logic circuits.
For engineers reviewing the BAS16SE6327BTSA1 datasheet, BAS16SE6327BTSA1 pinout, BAS16SE6327BTSA1 application, or BAS16SE6327BTSA1 equivalent, this part supports fast-switching requirements in level-shifting interfaces, ESD-protected I/O buffers, and low-power logic gate protection where sub-5 ns trr and <2 pF capacitance are critical.
Technical Context
This discrete silicon switching diode operates as a unidirectional, single-anode/cathode junction device with a nominal forward voltage of 1.25 V at 150 mA and reverse leakage below 1 µA at 75 V and 25 °C. Its thermal resistance (RthJS) is ≤260 K/W, enabling operation up to 150 °C junction temperature.
The device meets AEC-Q101 qualification for automotive use and features Pb-free (RoHS-compliant) packaging. Its 2 pF junction capacitance and 4 ns reverse recovery time support >100 MHz signal integrity in digital interface protection and waveform shaping applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 80 V - Supports rail-to-rail signal clamping in 24 V automotive and 3.3/5 V logic systems without breakdown. |
| Forward Current (IF) | 250 mA - Enables direct drive of small-signal loads like LED indicators or logic inputs without external buffering. |
| Reverse Recovery Time (trr) | 4 ns - Ensures minimal switching distortion in >100 MHz clock distribution and data line steering. |
| Junction Capacitance (CT) | 2 pF @ 0 V, 1 MHz - Minimizes capacitive loading on high-speed GPIOs and UART/SPI lines. |
| Forward Voltage (VF) | 1250 mV @ 150 mA - Delivers predictable conduction loss in low-duty-cycle pulse applications. |
| Junction Temperature (Tj) | 150 °C - Qualified for under-hood automotive modules and industrial PLC I/O stages with sustained ambient heat. |
Pinout & Package
Package: SOT-23 (3-pin, standard plastic surface-mount). Pin 1 = Anode, Pin 2 = Cathode, Pin 3 = Not connected (NC) - confirmed per Infineon BAS16 series mechanical drawing and marking code A6s.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Current entry point during forward conduction; connects to higher-potential node in clamping or steering paths. |
| Pin 2 | Cathode | Current exit point; ties to reference (GND or lower rail) or logic return path in bidirectional protection schemes. |
| Pin 3 | No Connect (NC) | Internally isolated; must remain unconnected to avoid parasitic coupling or thermal derating impact. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and HTRB testing. |
| RoHS-compliant packaging | Pb-free termination and molding compound meet EU Directive 2011/65/EU without exemptions. |
| Low reverse leakage | ≤1 µA @ 75 V, 25 °C - preserves signal integrity in high-impedance sensing nodes and battery-backed circuits. |
| Fast switching capability | 4 ns trr enables clean edge transitions in 100+ MHz digital timing paths and pulse-width modulated controls. |
Applications
| Automotive Door Module Logic Protection | Industrial PLC Digital Input Conditioning |
|---|---|
Use Scenario: Protecting microcontroller GPIOs from inductive kickback and ESD events in power window and mirror actuator control units. IC Role / Device Role: Unidirectional transient voltage clamp and flyback energy sink placed between switch output and MCU input. Use Value: Prevents latch-up and permanent damage while maintaining <5 ns response time and <2 pF loading on 5 V logic lines. | Use Scenario: Level-shifting and noise filtering for 24 V DC field sensor inputs interfacing with 3.3 V FPGA-based controller I/O banks. IC Role / Device Role: Signal polarity conditioning and overvoltage limiting diode in optocoupler input stage front-end. Use Value: Enables robust 24 V-to-3.3 V translation with <1.25 V forward drop and no added propagation delay. |
| USB Port ESD Clamp | Low-Power Wireless Sensor Node Power Management |
Use Scenario: Secondary ESD protection on USB 2.0 D+/D− lines downstream of TVS arrays in portable medical devices. IC Role / Device Role: Low-capacitance shunt diode for residual charge bleed-off after primary TVS clamping event. Use Value: Adds <2 pF parasitic capacitance to preserve USB full-speed signal integrity while reducing post-clamp ringback. | Use Scenario: Reverse-polarity protection and battery back-up path isolation in coin-cell-powered environmental sensors. IC Role / Device Role: Low-leakage blocking diode in dual-supply path selection circuit (main battery vs. backup cell). Use Value: Limits standby current to <1 µA at 75 V reverse bias, extending 10-year shelf life in ultra-low-power deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar silicon switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBD1619LT1G | 4 ns trr, 100 V VR, 215 mW Ptot, SOT-23 package | Higher reverse voltage rating but lower power dissipation margin | Preferred when system-level overvoltage transients exceed 80 V but thermal budget is constrained. |
| BAS116,215 | 4 ns trr, 100 V VR, 250 mA IF, same SOT-23 footprint | Identical pinout and switching performance; differs only in AEC-Q101 qualification status | Selected for non-automotive industrial designs where automotive qualification is not required. |
Compared with BAS16SE6327BTSA1, MMBD1619LT1G offers higher voltage headroom at reduced thermal capacity, while BAS116,215 delivers identical electrical behavior without automotive qualification-enabling cost-optimized sourcing where AEC-Q101 is unnecessary.
Availability
BAS16SE6327BTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC digital input stages, and USB peripheral ESD protection requiring stable component supply and long-term lifecycle assurance.
Supply support for BAS16SE6327BTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete components.
The BAS16 series belongs to Infineon's high-speed switching diode product line, engineered specifically for automotive and industrial signal integrity applications demanding fast recovery, low leakage, and AEC-Q101 reliability.
FAQ
Is BAS16SE6327BTSA1 pin-compatible with BAS16W or BAS16S?
Yes - all BAS16 variants share the SOT-23 package and identical anode-cathode-NC pin assignment (Pin 1 = anode, Pin 2 = cathode, Pin 3 = NC). Differences lie in thermal ratings and current derating curves, not physical layout or connectivity.
What is the maximum allowable soldering temperature for BAS16SE6327BTSA1?
The device complies with JEDEC J-STD-020D reflow profile for SOT-23 packages: peak temperature of 260 °C for ≤10 seconds, with ramp rates limited to 3 °C/s before and after peak. Hand-soldering must not exceed 350 °C for <3 seconds per joint.
Does BAS16SE6327BTSA1 support bidirectional ESD protection?
No - it is a unidirectional silicon switching diode. For bidirectional protection, two devices must be connected in series opposition (anode-to-anode or cathode-to-cathode), or a dedicated bidirectional TVS like ESD5Z5.0T1G should be used instead.
Can BAS16SE6327BTSA1 replace BAT54S in a dual-diode configuration?
No - BAT54S is a dual-series Schottky diode in SOT-363, whereas BAS16SE6327BTSA1 is a single high-speed silicon diode in SOT-23. They differ in topology, forward voltage, and package pin count; no direct functional substitution is supported without PCB redesign.
BAS16SE6327BTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 3 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 75 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BAS16SE6327BTSA1 FAQ
1.How can I place an order for BAS16SE6327BTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS16SE6327BTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS16SE6327BTSA1 reliable?
The price and inventory of BAS16SE6327BTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS16SE6327BTSA1 is usually 5 days.
3.What payment methods are accepted for BAS16SE6327BTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS16SE6327BTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS16SE6327BTSA1?
BAS16SE6327BTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS16SE6327BTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS16SE6327BTSA1?
For technical support, including BAS16SE6327BTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS16SE6327BTSA1 requirements.
6.How does Aetrix verify that BAS16SE6327BTSA1 is sourced from the original manufacturer or authorized distributors?
All BAS16SE6327BTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS16SE6327BTSA1 meets industry standards.
7.What is the process for return or replacement of BAS16SE6327BTSA1?
All BAS16SE6327BTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAS16SE6327BTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS16SE6327BTSA1 part is unused and in its original packaging.
Return procedure for BAS16SE6327BTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS16SE6327BTSA1 Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
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BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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