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Nexperia USA Inc. BAS16VV,115
- Part No.:
- BAS16VV,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
BAS16VV,115.pdf
- Description:
- DIODE ARRAY GP 100V 200MA SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:875
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Product details
Overview
BAS16VV from Nexperia is a triple high-speed switching diode array in SOT666 package, configured as three independent anode-cathode pairs (A1/K1, A2/K2, A3/K3), with 100 V repetitive peak reverse voltage, ≤4 ns reverse recovery time, and 1.5 pF capacitance at 0 V - enabling fast signal routing in compact logic-level interface circuits.
For engineers reviewing the BAS16VV datasheet, BAS16VV pinout, BAS16VV application, or BAS16VV equivalent, this device supports high-frequency switching in space-constrained PCB layouts where low trr, low leakage (<0.5 µA at 80 V), and matched dual/triple diode topology are required for signal clamping, level translation, or protection in digital I/O stages.
Technical Context
The BAS16VV integrates three discrete high-speed diodes in a single ultra-small SOT666 package, sharing no internal connection between anodes or cathodes - each diode operates independently with identical electrical characteristics. Its trr ≤ 4 ns is measured under standardized IF = 10 mA / IR = 10 mA / RL = 100 Ω conditions, confirming suitability for >100 MHz switching waveforms.
Thermal resistance Rth(j-a) is 700 K/W in free air and 410 K/W on FR4 with optimized cathode pad (1 cm²), supporting continuous operation up to 150 °C junction temperature. Forward voltage remains ≤855 mV at 10 mA, ensuring minimal voltage drop in low-power logic interface paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 100 V - supports rail-to-rail signal clamping in 3.3 V to 24 V logic systems without breakdown |
| trr | ≤4 ns - enables clean edge transitions in >100 MHz digital signal routing and pulse shaping |
| Cd | 1.5 pF at 0 V - minimizes capacitive loading on high-impedance nodes like microcontroller GPIOs |
| IR | 0.5 µA at VR = 80 V - ensures negligible leakage current in battery-powered standby modes |
| VF | 855 mV at IF = 10 mA - maintains low forward loss while preserving noise margin in CMOS/TTL interfaces |
| Ptot | 180 mW - allows continuous operation at full rated current on standard FR4 PCBs without heatsinking |
Pinout & Package
SOT666 is a 6-pin ultra-small flat lead surface-mount plastic package measuring 1.6 mm × 1.2 mm × 0.55 mm with 0.5 mm pitch and exposed thermal pad-compatible footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first diode path; connects to source of clamped or steered signal |
| 2 | Anode (Diode 2) | Independent input node for second diode path; electrically isolated from Pin 1 |
| 3 | Anode (Diode 3) | Independent input node for third diode path; enables triple parallel or multi-rail protection |
| 4 | Cathode (Diode 3) | Output node for third diode; tied to common reference (e.g., VCC or clamp rail) |
| 5 | Cathode (Diode 2) | Output node for second diode; may be connected separately or paralleled with Pin 4 or 6 |
| 6 | Cathode (Diode 1) | Output node for first diode; supports individual or shared cathode routing per design need |
Key Features
| Feature | Design Value |
|---|---|
| Triple independent diode structure | Enables simultaneous clamping/steering across three signal lines without cross-talk or shared impedance |
| trr ≤ 4 ns | Reduces switching distortion in high-edge-rate applications such as USB 2.0 data lines or FPGA I/O protection |
| Low 1.5 pF capacitance | Preserves signal integrity on 50 Ω transmission lines and prevents timing skew in matched-pair routing |
| 0.5 µA max IR at 80 V | Extends battery life in always-on sensor interfaces by limiting quiescent current drain |
| SOT666 footprint | Reduces board area by >60% vs. SO-8 equivalents while maintaining reflow compatibility and IPC-7351B compliance |
Applications
| USB 2.0 ESD Protection | FPGA I/O Level Translation |
|---|---|
Use Scenario: Bidirectional signal lines (D+, D−) require transient suppression and DC-level isolation between host and peripheral. IC Role / Device Role / Timing Role: Discrete clamping diode array providing low-capacitance path to VBUS or GND during ESD events while remaining transparent during normal signaling. Use Value: 1.5 pF capacitance avoids signal rise-time degradation; 4 ns trr prevents latch-up during fast transients. |
Use Scenario: Interfacing 1.8 V FPGA banks to 3.3 V peripherals demands bidirectional voltage shifting without active circuitry. IC Role / Device Role / Timing Role: Passive level translator using forward-biased diode drops to offset logic thresholds across voltage domains. Use Value: Matched VF (855 mV typ.) across all three diodes ensures consistent translation offset; independent pins allow per-signal optimization. |
| Microcontroller GPIO Protection | High-Speed Logic Gate Clamping |
Use Scenario: MCU pins exposed to external connectors risk overvoltage and reverse polarity during field maintenance or hot-plug events. IC Role / Device Role / Timing Role: Input protection network using anode-to-signal / cathode-to-rail configuration to shunt excess energy before IC damage. Use Value: 100 V VRRM withstands industrial surge transients; 0.5 µA IR preserves sleep-mode current budgets. |
Use Scenario: TTL/CMOS gate inputs driving long traces experience ringing and overshoot exceeding VIH/VIL margins. IC Role / Device Role / Timing Role: Fast-turn-off clamp limiting positive/negative excursions to safe logic thresholds using dual-diode back-to-back configuration. Use Value: Triple diode layout permits compact dual-rail clamping (e.g., Pins 1+6 and 2+5) with sub-ns response symmetry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W,115 | Same SOT666 package but dual-diode (2 anodes, 2 cathodes); trr = 4 ns, Cd = 2 pF, IR = 1 µA at 80 V | Lacks third diode; unsuitable for triple-signal routing but offers tighter matching between two channels | Select when only two signal paths require protection and lower unit cost is prioritized over channel count |
| BAS16DW,115 | Dual-diode variant in SOT363 (2.1 mm × 1.25 mm); trr = 4 ns, Cd = 1.5 pF, IR = 0.5 µA - identical electrical specs but larger footprint | Compatible pinout for dual-channel use but occupies ~35% more board area than SOT666 | Select when legacy SOT363 layout reuse is required and space constraints are less severe than for new miniaturized designs |
Compared with BAV99W and BAS16DW, the BAS16VV uniquely delivers three independent high-speed diodes in the smallest industry-standard footprint (SOT666), making it optimal for next-generation portable and dense interconnect applications where channel count and area efficiency are co-constrained.
Availability
BAS16VV is available at Aetrix Electronics and suitable for USB 2.0 interface protection, FPGA I/O level translation, and microcontroller GPIO protection requiring stable component supply and guaranteed long-term sourcing.
Supply support for BAS16VV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors - high-performance, reliable components for power management, logic, analog, and MOSFETs used in automotive, industrial, and consumer electronics.
The BAS16VV belongs to Nexperia's high-speed switching diode family, engineered specifically for signal integrity preservation in compact digital interfaces where speed, size, and leakage performance are simultaneously critical.
FAQ
Is BAS16VV suitable for automotive applications?
No. The BAS16VV is explicitly marked as non-automotive qualified in its revision history and legal disclaimers. It has not undergone AEC-Q101 stress testing or automotive-grade qualification, and Nexperia states it is not warranted for use in safety-critical or life-support systems. Automotive designs must select AEC-Q101 qualified alternatives such as PNE20010EP or BAS16HVY.
Can BAS16VV be used as a standalone ESD protection device per IEC 61000-4-2?
No. While the BAS16VV exhibits low capacitance and fast trr, it lacks specified IEC 61000-4-2 contact discharge ratings (e.g., ±8 kV) and does not integrate integrated TVS structures or defined clamping voltages under transient conditions. It functions as a signal-conditioning diode, not a certified ESD suppressor - dedicated ESD arrays like PESD5V0S1BB or ESDALC6V1-1U2 are required for compliance.
What is the maximum continuous forward current per diode in BAS16VV?
The absolute maximum continuous forward current per diode is 200 mA at Tamb ≤ 25 °C on FR4 PCB with standard footprint, as stated in Table 5 (Limiting values). Derating applies above 25 °C ambient: at 85 °C, usable current drops to approximately 120 mA based on thermal resistance and Ptot = 180 mW limit.
Does BAS16VV support reverse-biased operation as a voltage reference?
No. The BAS16VV is not characterized or specified for stable Zener-like behavior. Its reverse breakdown is rated only up to 100 V (VRRM), with no guaranteed knee voltage, regulation tolerance, or dynamic impedance data provided. For precision voltage referencing, purpose-built Zener diodes such as BZX84-C5V1 or TL431-based circuits should be used instead.
BAS16VV,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Diode Configuration:
- 3 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
BAS16VV,115 FAQ
1.How can I place an order for BAS16VV,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS16VV,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS16VV,115 reliable?
The price and inventory of BAS16VV,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS16VV,115 is usually 5 days.
3.What payment methods are accepted for BAS16VV,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS16VV,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS16VV,115?
BAS16VV,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS16VV,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS16VV,115?
For technical support, including BAS16VV,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS16VV,115 requirements.
6.How does Aetrix verify that BAS16VV,115 is sourced from the original manufacturer or authorized distributors?
All BAS16VV,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS16VV,115 meets industry standards.
7.What is the process for return or replacement of BAS16VV,115?
All BAS16VV,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAS16VV,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS16VV,115 part is unused and in its original packaging.
Return procedure for BAS16VV,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS16VV,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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