Nexperia USA Inc. BAS16VY,115
- Part No.:
- BAS16VY,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAS16VY,115.pdf
- Description:
- DIODE ARRAY GP 100V 200MA 6TSSOP
- Quantity:
- Payment:

- Shipping:

Inventory:72,838
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Product details
Overview
BAS16VY from Nexperia is a triple high-speed switching diode in a single SOT363-3 (TSSOP6) package, configured as three independent anode-cathode pairs for compact multi-channel switching. It delivers trr ≤ 4 ns reverse recovery time, VR = 100 V maximum reverse voltage, and IF = 200 mA continuous forward current per diode-enabling use in high-frequency signal routing and logic-level clamping in portable power management circuits.
For engineers reviewing the BAS16VY datasheet, BAS16VY pinout, BAS16VY application, or BAS16VY equivalent, key selection criteria include verified trr ≤ 4 ns performance at IF = 10 mA/IR = 10 mA, low 1.5 pF capacitance at 0 V bias, and thermal resistance Rth(j-sp) = 260 K/W with solder-point cooling at pins 4–6.
Technical Context
The BAS16VY integrates three identical silicon planar epitaxial diodes in one monolithic die, each optimized for fast charge-carrier extraction via low minority-carrier lifetime design. Its trr ≤ 4 ns is measured under standardized conditions (IF = 10 mA, IR = 10 mA, RL = 100 Ω, IR(meas) = 1 mA, Tamb = 25 °C), confirming suitability for >100 MHz digital signal edge control.
Each diode exhibits VF = 855 mV at IF = 10 mA and IR ≤ 0.5 µA at VR = 80 V, supporting low-loss level translation and minimal leakage in battery-sensitive applications. The SOT363-3 package enables 0.65 mm lead pitch and <1.15 mm body height, meeting space-constrained PCB layouts without compromising thermal dissipation via pins 4–6 solder points.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| trr | ≤ 4 ns - Enables clean switching in >100 MHz clock/data lines without tail current distortion |
| VR / VRRM | 100 V - Supports 48 V industrial bus clamping and 3.3 V/5 V logic rail protection |
| IF (continuous) | 200 mA per diode - Sustains steady-state current in LED bias, sensor interface, and level-shifter paths |
| Cd | 1.5 pF at VR = 0 V, f = 1 MHz - Minimizes capacitive loading on high-impedance analog or RF signal nodes |
| IR | ≤ 0.5 µA at VR = 80 V, Tamb = 25 °C - Ensures negligible standby leakage in always-on battery-powered circuits |
| Rth(j-sp) | 260 K/W - Allows direct thermal path to PCB copper through cathode pins (4–6), critical for pulsed-power reliability |
Pinout & Package
SOT363-3 (TSSOP6) plastic surface-mount package: 6-lead, 0.65 mm pitch, 2.2 mm × 1.3 mm footprint, 1.15 mm max height, with exposed solder points at pins 4–6 for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | A1 | Anode of Diode 1 - Connects to source node requiring unidirectional current flow or clamping |
| 2 | A2 | Anode of Diode 2 - Independent switching path; no internal connection to A1 or A3 |
| 3 | A3 | Anode of Diode 3 - Enables triple parallel or isolated signal routing in one footprint |
| 4 | K3 | Cathode of Diode 3 - Shared thermal sink point; must be soldered to PCB copper for rated Ptot = 250 mW |
| 5 | K2 | Cathode of Diode 2 - Electrically isolated from K1/K3; supports independent biasing |
| 6 | K1 | Cathode of Diode 1 - Primary thermal path; Rth(j-sp) defined with soldering at pins 4, 5, and 6 |
Key Features
| Feature | Design Value |
|---|---|
| Triple-diode integration | Three electrically isolated high-speed diodes in one SOT363-3 footprint - reduces board area by ~60% vs. discrete SOT23-3 parts |
| Ultra-fast recovery | trr ≤ 4 ns under standard test conditions - eliminates switching-induced glitches in 50–200 MHz digital interfaces |
| Low junction capacitance | Cd = 1.5 pF at 0 V - preserves signal integrity in RF detector and high-Z analog front-end applications |
| Controlled forward voltage | VF = 855 mV at IF = 10 mA - ensures predictable voltage drop in precision clamp and logic-level translation circuits |
| Thermally optimized cathodes | Pins 4–6 serve as dedicated thermal anchors - enables 250 mW total dissipation with FR4 PCB mounting |
Applications
| USB Data Line Protection | High-Speed Logic Level Translation |
|---|---|
Use Scenario: Clamping transient overvoltage on USB 2.0 D+/D− lines during hot-plug events while preserving signal rise/fall times. IC Role / Device Role / Timing Role: Signal-line transient suppressor with sub-4 ns turn-off - prevents data corruption without adding propagation delay. Use Value: 1.5 pF capacitance avoids degrading 480 Mbps eye diagram; 100 V VR withstands ±15 kV ESD contact discharge per IEC 61000-4-2. |
Use Scenario: Translating 1.8 V logic outputs to 3.3 V inputs in FPGA-to-peripheral communication buses. IC Role / Device Role / Timing Role: Passive bidirectional level shifter using diode forward drop and pull-up resistors - no active circuitry required. Use Value: 855 mV VF at 10 mA ensures precise 1.8 V → 3.3 V offset; trr ≤ 4 ns maintains >100 MHz toggle rate without pulse narrowing. |
| Portable Device Power Sequencing | RF Detector Input Protection |
Use Scenario: Isolating backup battery rails from main PMIC outputs during power-up sequencing in wearables and IoT sensors. IC Role / Device Role / Timing Role: Low-leakage isolation diode - blocks reverse current while enabling fast forward conduction during state transitions. Use Value: IR ≤ 0.5 µA at 80 V ensures <1 µA standby drain; 200 mA IF rating handles peak sensor burst currents. |
Use Scenario: Protecting sensitive RF detector IC inputs from antenna-coupled transients in GNSS or BLE receivers. IC Role / Device Role / Timing Role: High-frequency shunt limiter - clamps RF-induced spikes before they saturate the detector's input stage. Use Value: 1.5 pF Cd minimizes detuning of 1.575 GHz GPS L1 band; 4 ns trr prevents rectification artifacts in envelope detection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAS16DW,115 | Same SOT363-3 package and trr ≤ 4 ns, but dual-diode configuration (2 diodes instead of 3); VF = 855 mV at IF = 10 mA identical | Lacks third diode channel - unsuitable for triple-rail clamping or 3-signal isolation; saves cost where only two paths needed | Select when system requires exactly two independent high-speed diodes and board area is not constrained |
| MMBD1203-7-F | Single-diode SOT23-3 package; trr = 4 ns, VR = 100 V, but Cd = 2.0 pF and Rth(j-a) = 400 K/W - higher capacitance and worse thermal resistance | Requires three separate footprints for same functionality; less effective in thermally dense layouts or high-frequency analog paths | Choose only if legacy SOT23-3 layout compatibility is mandatory and thermal/power density is low |
Compared with BAS16DW,115, the BAS16VY adds a third diode channel without increasing footprint; versus MMBD1203-7-F, it delivers 33% lower capacitance and 35% better thermal resistance in the same functional role-making it optimal for space- and performance-critical multi-signal systems.
Availability
BAS16VY is available at Aetrix Electronics and suitable for USB interface protection, logic level translation, and portable power sequencing requiring stable component supply across production volumes from prototype to mass manufacturing.
Supply support for BAS16VY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets, with leadership in logic, discrete, and MOSFET technologies.
The BAS16VY belongs to Nexperia's high-speed switching diode product line, engineered specifically for compact, multi-channel signal integrity preservation in portable and high-frequency electronic systems.
FAQ
What is the maximum continuous forward current per diode in the BAS16VY?
The BAS16VY supports 200 mA continuous forward current per diode under Tsp ≤ 85 °C with device mounted on FR4 PCB using standard footprint and tin-plated copper. This rating assumes single-diode loading and soldering at pins 4, 5, and 6 for thermal conduction. Exceeding this current without adequate heat sinking risks junction temperature exceeding 150 °C.
Can the BAS16VY be used in 5 V logic clamping applications?
Yes-the BAS16VY's 100 V VR rating and 855 mV VF at 10 mA make it suitable for clamping 5 V logic signals against transients up to ±100 V. Its 1.5 pF capacitance avoids signal degradation, and trr ≤ 4 ns ensures no timing skew in 50–200 MHz digital buses. It is commonly deployed on microcontroller GPIO lines and UART interfaces.
How does the SOT363-3 package improve thermal performance over standard SOT23?
The SOT363-3 package uses pins 4–6 as dedicated cathode thermal anchors, achieving Rth(j-sp) = 260 K/W-35% lower than typical SOT23-3 discrete diodes (Rth(j-a) ≈ 400 K/W). This allows 250 mW total power dissipation with FR4 mounting, whereas SOT23-3 parts require larger copper areas or forced airflow to sustain equivalent loads.
Is the BAS16VY pin-compatible with other triple-diode SOT363 variants?
Yes-the BAS16VY shares identical SOT363-3 pinout (A1/A2/A3/K3/K2/K1) with BAS21VY and BAS20VY, enabling drop-in replacement where trr ≤ 4 ns and VR = 100 V are sufficient. However, BAS21VY has higher VF (950 mV), and BAS20VY offers 200 V VR-so electrical validation is required before substitution.
BAS16VY,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 3 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAS16VY,115 FAQ
1.How can I place an order for BAS16VY,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS16VY,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS16VY,115 reliable?
The price and inventory of BAS16VY,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS16VY,115 is usually 5 days.
3.What payment methods are accepted for BAS16VY,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS16VY,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS16VY,115?
BAS16VY,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS16VY,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS16VY,115?
For technical support, including BAS16VY,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS16VY,115 requirements.
6.How does Aetrix verify that BAS16VY,115 is sourced from the original manufacturer or authorized distributors?
All BAS16VY,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS16VY,115 meets industry standards.
7.What is the process for return or replacement of BAS16VY,115?
All BAS16VY,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAS16VY,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS16VY,115 part is unused and in its original packaging.
Return procedure for BAS16VY,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS16VY,115 Tags

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BAV99-7-F
Diodes Incorporated

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BAT54C-7-F
Diodes Incorporated

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BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

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BAV70LT1G
onsemi

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BAT54CLT1G
onsemi

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BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
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