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Nexperia USA Inc. BAS16VY/ZLH
- Part No.:
- BAS16VY/ZLH
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAS16VY/ZLH.pdf
- Description:
- DIODE ARRAY GP 100V 200MA 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,981
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Product details
Overview
BAS16VY from Nexperia is a triple high-speed switching diode in a SOT363-3 (TSSOP6) package, configured as three independent anode-cathode pairs for compact multi-channel switching. It delivers trr ≤ 4 ns reverse recovery time, VR ≤ 100 V reverse voltage rating, and IF = 200 mA continuous forward current per diode-enabling use in space-constrained DC-DC converter snubbers and signal routing circuits.
For engineers reviewing the BAS16VY datasheet, BAS16VY pinout, BAS16VY application, or BAS16VY equivalent, key selection criteria include verified 4 ns trr performance at IF = 10 mA/IR = 10 mA, low 1.5 pF capacitance at 0 V bias, and validated thermal resistance of 260 K/W junction-to-solder point under single-diode loading.
Technical Context
The BAS16VY integrates three monolithic silicon switching diodes in a single TSSOP6 package with isolated anode and cathode terminals-no shared internal nodes. Each diode exhibits identical electrical characteristics: VF = 855 mV at IF = 10 mA, IR = 0.5 µA at VR = 80 V, and Cd = 1.5 pF at VR = 0 V / f = 1 MHz.
Its 4 ns trr is measured under standardized conditions (IF = 10 mA, IR = 10 mA, RL = 100 Ω, IR(meas) = 1 mA, Tamb = 25 °C), confirming suitability for >100 MHz switching applications where minority-carrier lifetime and junction capacitance are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| trr | 4 ns - Enables clean turn-off in high-frequency flyback snubbers and pulse shaping circuits |
| VR / VRRM | 100 V - Supports 48 V industrial bus protection and 24 V logic-level clamping |
| IF (continuous) | 200 mA per diode - Sufficient for low-power signal routing and LED driver bias paths |
| Cd | 1.5 pF at 0 V - Minimizes capacitive loading on high-impedance analog switch nodes |
| IR | 0.5 µA at VR = 80 V - Ensures low leakage in battery-backed hold-up and sensing circuits |
| VF | 855 mV at IF = 10 mA - Reduces conduction loss in low-current clamp and steering functions |
| Rth(j-sp) | 260 K/W - Requires soldering only at pins 4–6 to achieve rated power dissipation (250 mW) |
Pinout & Package
Package: SOT363-3 (TSSOP6), 6-pin surface-mount plastic package with 0.65 mm pitch, 2.2 mm × 1.3 mm body size, and exposed solder points at pins 4, 5, and 6 for thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | A1 | Anode of Diode 1 - Independent switching path; no internal connection to other anodes |
| 2 | A2 | Anode of Diode 2 - Electrically isolated from A1 and A3; enables dual-rail or differential routing |
| 3 | A3 | Anode of Diode 3 - Fully decoupled terminal; supports triple independent clamping or OR-ing |
| 4 | K3 | Cathode of Diode 3 - Shared thermal pad location; soldering here improves heat extraction |
| 5 | K2 | Cathode of Diode 2 - Isolated cathode node; allows separate return paths for noise isolation |
| 6 | K1 | Cathode of Diode 1 - Dedicated cathode; enables discrete grounding or voltage referencing |
Key Features
| Feature | Design Value |
|---|---|
| Triple independent diode structure | Three isolated anode-cathode pairs in one footprint-reduces PCB area vs. discrete SOT23-3 devices |
| 4 ns reverse recovery time | Validated under JEDEC-standard test conditions-ensures minimal switching loss in >100 MHz clock routing |
| 1.5 pF junction capacitance | Measured at 0 V and 1 MHz-preserves signal integrity in RF detector and fast comparator inputs |
| 250 mW total power dissipation | Rated at Tsp ≤ 85 °C with soldering at pins 4–6-supports sustained operation in sealed enclosures |
| 150 °C maximum junction temperature | Enables deployment in automotive under-hood ambient environments up to 125 °C with margin |
Applications
| DC-DC Converter Snubber Network | Digital Signal Level Translation |
|---|---|
Use Scenario: Suppressing voltage spikes across synchronous rectifier MOSFETs in 500 kHz buck converters. IC Role / Device Role: Fast-recovery clamp diode absorbing inductive kickback energy. Use Value: 4 ns trr limits spike duration and reduces EMI generation; 100 V VR rating covers 48 V input transients. |
Use Scenario: Translating 3.3 V logic signals to 5 V microcontroller inputs while blocking reverse current. IC Role / Device Role: Bidirectional level-shifting diode with low forward drop and negligible capacitance. Use Value: 855 mV VF at 10 mA ensures minimal voltage offset; 1.5 pF Cd avoids signal edge degradation. |
| Multi-Rail Power Sequencing | High-Frequency Clock Signal Routing |
Use Scenario: Enabling controlled power-up sequencing across three independent 3.3 V, 5 V, and 12 V rails. IC Role / Device Role: OR-ing diode for rail isolation and fault containment. Use Value: Triple independent anodes/cathodes allow separate control per rail without cross-talk. |
Use Scenario: Steering 125 MHz LVCMOS clock signals between FPGA banks with minimal jitter impact. IC Role / Device Role: Low-capacitance signal path selector and transient suppressor. Use Value: 1.5 pF Cd prevents clock edge rounding; 4 ns trr avoids false triggering during fast transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor MMBD1203 | Single diode in SOT-23; trr = 4 ns, VR = 100 V, but no multi-diode integration | Requires three separate placements for equivalent functionality-increases layout area and assembly cost | Select when board space permits discrete placement and thermal design favors individual thermal pads |
| Diodes Incorporated BAV99W | Triple diode in SOT-363; trr = 4 ns, VR = 70 V (lower than BAS16VY's 100 V) | Not suitable for 48 V bus clamping; limited to ≤36 V systems due to lower VRRM | Choose only for cost-sensitive 24 V applications where 70 V rating is sufficient and sourcing favors Diodes Inc. |
Compared with MMBD1203 and BAV99W, the BAS16VY uniquely combines 100 V VRRM, triple-diode integration, and 260 K/W thermal resistance in SOT363-3-making it optimal for compact, high-voltage, thermally constrained switching designs.
Availability
BAS16VY is available at Aetrix Electronics and suitable for DC-DC converter snubbers, digital signal level translation, and multi-rail power sequencing requiring stable component supply and consistent parametric performance across production lots.
Supply support for BAS16VY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard products-including logic, discretes, MOSFETs, and ESD protection devices-with manufacturing rooted in process optimization and automotive-grade quality systems.
The BAS16VY belongs to Nexperia's high-speed switching diode product line, engineered specifically for miniaturized power management and signal integrity applications demanding sub-5 ns recovery and ultra-low capacitance in space-constrained layouts.
FAQ
What is the maximum continuous forward current per diode in the BAS16VY?
The BAS16VY supports 200 mA continuous forward current per diode at Tamb ≤ 85 °C when mounted on FR4 PCB with single-sided copper and standard footprint. This rating assumes single-diode loading and applies only when soldering points are at pins 4, 5, and 6 as specified in the thermal characteristics table.
Can the BAS16VY be used in automotive under-hood applications?
Yes-the BAS16VY has a rated junction temperature of 150 °C and operates across –65 °C to +150 °C ambient range. However, it is not AEC-Q101 qualified; for automotive under-hood use, system-level validation of thermal derating and vibration resilience is required by the end customer.
How is the reverse recovery time (trr) measured for the BAS16VY?
trr is measured using the circuit in Figure 5 of the datasheet: IF = 10 mA, IR = 10 mA, RL = 100 Ω, IR(meas) = 1 mA, Tamb = 25 °C, with input pulse rise time tr = 0.6 ns and reverse pulse duration tp = 100 ns. The value is confirmed at ≤4 ns across production lots.
Are the three diodes inside the BAS16VY electrically isolated from each other?
Yes-pinning information confirms fully independent anode (A1/A2/A3) and cathode (K1/K2/K3) terminals with no internal connection. Electrical isolation is verified by zero inter-diode leakage (<1 nA) and absence of shared substrate nodes in the device construction.
BAS16VY/ZLH Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 3 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAS16VY/ZLH FAQ
1.How can I place an order for BAS16VY/ZLH through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS16VY/ZLH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS16VY/ZLH reliable?
The price and inventory of BAS16VY/ZLH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS16VY/ZLH is usually 5 days.
3.What payment methods are accepted for BAS16VY/ZLH?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS16VY/ZLH transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS16VY/ZLH?
BAS16VY/ZLH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS16VY/ZLH order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS16VY/ZLH?
For technical support, including BAS16VY/ZLH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS16VY/ZLH requirements.
6.How does Aetrix verify that BAS16VY/ZLH is sourced from the original manufacturer or authorized distributors?
All BAS16VY/ZLH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS16VY/ZLH meets industry standards.
7.What is the process for return or replacement of BAS16VY/ZLH?
All BAS16VY/ZLH units undergo pre-shipment inspection (PSI). If there is an issue with BAS16VY/ZLH, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS16VY/ZLH part is unused and in its original packaging.
Return procedure for BAS16VY/ZLH:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS16VY/ZLH Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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