Nexperia USA Inc. BAS16WF

Overview

BAS16WF from Nexperia is a high-speed switching diode in SOT323 (SC-70) package, designed for fast signal routing and low-capacitance signal path isolation in compact digital and RF interfaces. Confirmed parameters include reverse voltage ≤100 V, reverse recovery time ≤4 ns, forward voltage ≤855 mV at 10 mA, leakage current ≤0.5 µA at 80 V, and diode capacitance ≤1.5 pF at 0 V - enabling use in 50 MHz+ clock distribution and data line clamping.

For engineers reviewing the BAS16WF datasheet, BAS16WF pinout, BAS16WF application, or BAS16WF equivalent, key selection criteria include trr ≤4 ns for <10 ns edge-rate signal integrity, VR ≤100 V for industrial I/O protection, SC-70 footprint compatibility with 0.65 mm pitch routing, and thermal resistance Rth(j-a) = 625 K/W on FR4 PCBs.

Technical Context

This discrete silicon switching diode operates as a unidirectional current valve with low stored charge and minimal minority-carrier lifetime, optimized for sub-10 ns reverse recovery. Its structure supports pulsed forward currents up to 4 A (1 µs) and repetitive peak forward current of 500 mA, with junction temperature rated to 150 °C.

The device exhibits low parasitic capacitance (1.5 pF at 0 V) and low leakage (≤0.5 µA at 80 V, 25 °C), making it suitable for high-frequency sampling gates and ESD-sensitive signal paths where capacitive loading must remain below 2 pF and DC bias leakage must stay under 1 µA.

Key Specifications

Pinout & Package

Package: SOT323 (SC-70), 3-terminal surface-mount plastic package, body dimensions 2.0 mm × 1.25 mm × 0.95 mm, 1.3 mm lead pitch.

Key Features

Applications

Availability

BAS16WF is available at Aetrix Electronics and suitable for USB interface protection, industrial digital input conditioning, RF detector front-ends, and high-speed logic level translation requiring stable component supply and consistent SC-70 footprint availability.

Supply support for BAS16WF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with manufacturing rooted in process control and automotive-grade quality systems.

The BAS16W series belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity preservation in compact, high-frequency digital and mixed-signal applications - not general-purpose rectification.

FAQ

Is BAS16WF pin-compatible with BAS16W?

Yes - BAS16WF is a marked variant of the BAS16W, sharing identical SOT323 pinning (Anode–NC–Cathode), electrical specifications, and thermal characteristics. The 'F' suffix denotes a specific wafer fab or test lot code per Nexperia's internal marking convention, not a functional revision.

What is the maximum continuous forward current for BAS16WF?

The absolute maximum continuous forward current is 175 mA at Tamb ≤ 25 °C, limited by 200 mW total power dissipation. At elevated ambient temperatures, derating applies: e.g., 100 mA at Tamb = 85 °C, based on Rth(j-a) = 625 K/W and Tj(max) = 150 °C.

Can BAS16WF be used in place of 1N4148W in SOT323 designs?

No - although both are SOT323 switching diodes, BAS16WF has trr ≤ 4 ns and Cd ≤ 1.5 pF, whereas 1N4148W typically specifies trr ≤ 4 ns but Cd ≈ 4 pF. In RF or >20 MHz digital applications, the higher capacitance of 1N4148W may cause measurable signal degradation not seen with BAS16WF.

Does BAS16WF meet automotive qualification standards?

No - per Nexperia's 2022 revision history, BAS16W (and thus BAS16WF) is explicitly designated as non-automotive qualified. It lacks AEC-Q101 stress testing and is not approved for use in safety-critical or engine-control applications. Automotive alternatives include BAS16W-Q or PNV100EN.