Nexperia USA Inc. BAS20,215

Overview

BAS20,215 from Nexperia is a high-voltage switching diode in SOT23 package, rated for 200 V repetitive peak reverse voltage (VRRM), 1.25 V forward voltage at 200 mA, and 50 ns reverse recovery time (trr). It delivers low leakage (100 nA at 150 V, 25 °C), 5 pF capacitance, and operates up to 150 °C junction temperature - enabling robust clamping and polarity protection in DC power rails.

For engineers reviewing the BAS20,215 datasheet, BAS20,215 pinout, BAS20,215 application, or BAS20,215 equivalent, key selection criteria include verified VRRM margin, trr performance under 30 mA switching conditions, thermal derating on FR4 PCB, and compatibility with 1.9 mm pitch SMT reflow profiles.

Technical Context

The BAS20,215 is a planar epitaxial silicon switching diode optimized for high-voltage transient suppression and fast unidirectional current control. Its 50 ns trr is measured under standardized IF = IR = 30 mA, RL = 100 Ω, and IR(meas) = 3 mA conditions, confirming suitability for kHz-range switching in flyback snubbers and relay drivers.

Thermal design relies on Rth(j-a) = 500 K/W (FR4 board), limiting continuous forward current to 200 mA at Tamb ≤ 25 °C, with linear derating to zero at 150 °C ambient. The n.c. (pin 2) terminal eliminates parasitic coupling in high-impedance bias networks.

Key Specifications

Pinout & Package

Package: SOT23 plastic surface-mount package (2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch), optimized for automated placement and reflow soldering per IPC-7351B footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching diode applications.

Compared with BAS20,215, BAS21,215 extends voltage capability without sacrificing speed or package, while 1N4148W,115 trades voltage headroom for ultrafast response - making BAS20,215 the optimal balance for 100–200 V industrial switching where reliability and margin are prioritized.

Availability

BAS20,215 is available at Aetrix Electronics and suitable for industrial power supply clamping, reverse polarity protection, and high-voltage signal conditioning requiring stable component supply and long-term production continuity.

Supply support for BAS20,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

The BAS series targets high-voltage switching applications demanding robustness, speed, and small-footprint SMT integration - specifically engineered for industrial power management, protection, and signal routing where VRRM ≥ 200 V and trr ≤ 50 ns are critical.

FAQ

What is the maximum continuous forward current for BAS20,215 at 70 °C ambient?

At 70 °C ambient temperature, the maximum continuous forward current is 125 mA. This is derived from the derating curve in Figure 5: starting from 200 mA at 25 °C and linearly decreasing to zero at 150 °C, resulting in 200 mA × (1 − (70−25)/125) = 125 mA. Operation above this value risks exceeding Ptot = 250 mW and thermal runaway.

Can BAS20,215 be used in automotive applications?

No - BAS20,215 is explicitly marked as non-automotive qualified in the revision history (Table 8). It lacks AEC-Q101 qualification, has no automotive-grade screening, and Nexperia states it is "not suitable for automotive use." For automotive designs, consult Nexperia's BAS20-Q or BAS21-Q variants, which undergo extended temperature and reliability testing.

Is pin 2 (n.c.) safe to connect to ground or leave floating?

Pin 2 must remain unconnected - it is internally not bonded and electrically isolated. Connecting it to ground or any potential introduces unpredictable parasitic capacitance (up to 0.5 pF) and may compromise ESD robustness. The datasheet mandates "not connected" in Table 2 and warns against using it as a thermal pad or shield.

How does BAS20,215 perform at elevated junction temperatures?

At Tj = 150 °C, reverse leakage increases to 100 µA (per Table 5), while VF remains stable within ±5 % due to silicon's inherent characteristics. However, trr degrades by ~15 % (to ~58 ns) and Ptot drops to zero - requiring strict thermal management via copper pour or forced airflow to maintain safe operating area in high-power applications.