Taiwan Semiconductor Corporation BAS20W RVG

Overview

BAS20W RVG from Taiwan Semiconductor is a surface-mount small-signal switching diode in SOT-323 package, rated for 250 V peak repetitive reverse voltage (V_R), 200 mA average rectified current (I_O), and 625 mW power dissipation (P_D), used in general-purpose DC blocking and fast-switching circuits in power management modules.

For engineers reviewing the BAS20W RVG datasheet, BAS20W RVG pinout, BAS20W RVG application, or BAS20W RVG equivalent, key selection considerations include its 250 V V_R, 200 mA I_O, 4 ns reverse recovery time (t_rr), SOT-323 thermal resistance (R_θJA = 200 °C/W), and moisture sensitivity level 1 handling requirements.

Technical Context

This diode operates as a unidirectional voltage-controlled switch with low forward voltage drop (V_F = 1.25 V at I_F = 30 mA) and minimal junction capacitance (C_D = 5 pF at V_R = 0 V, f = 1 MHz). Its fast t_rr of 4 ns enables use in high-frequency rectification up to several MHz.

The device features a silicon planar epitaxial construction, rated for junction temperatures from –55 °C to +150 °C and storage from –55 °C to +150 °C. It meets RoHS and Pb-free requirements with MSL Level 1 reflow compatibility (260 °C/10 s).

Key Specifications

Pinout & Package

Package: SOT-323 - Three-terminal surface-mount plastic package (2.2 × 1.35 × 0.9 mm), MSL Level 1, 5 mg typical weight, green compound (RVG marking).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode applications.

Compared with BAS20W RVG, BAS20LT1G demands layout change and offers inferior thermal performance, while BAV20W sacrifices voltage rating and switching speed-neither is pin-compatible, and both require validation of system-level voltage stress and timing margins.

Availability

BAS20W RVG is available at Aetrix Electronics and suitable for AC-DC adapters, low-power DC-DC converters, ESD protection circuits, and signal-level voltage clamping requiring stable component supply and consistent SOT-323 form factor.

Supply support for BAS20W RVG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete devices, analog ICs, and power management solutions since 1979.

The BAS20W RVG belongs to TSC's Small Signal Product family, engineered for high-speed switching, low-loss rectification, and reliable transient suppression in space-constrained consumer and industrial power systems.

FAQ

What is the maximum junction temperature rating for BAS20W RVG?

The BAS20W RVG has a maximum junction temperature (T_J) of +150 °C and a minimum of –55 °C. This rating defines the operational thermal limit of the silicon die; sustained operation above +150 °C risks permanent parametric shift or failure. Derating curves in the datasheet (DS_S1405006, Fig. 3) specify allowable power dissipation versus ambient temperature to ensure T_J remains within limits. The BAS20W RVG must be thermally managed accordingly in PCB layout.

Is BAS20W RVG suitable for high-frequency switching applications like Class-D audio amplifiers?

Yes, the BAS20W RVG is suitable for high-frequency switching applications including Class-D audio amplifier bootstrap and snubber circuits, thanks to its 4 ns reverse recovery time (t_rr) and low 5 pF junction capacitance. These parameters minimize switching losses and parasitic oscillation at frequencies up to several MHz. However, designers must verify layout-induced inductance and ensure the 250 V V_R rating exceeds peak transient voltages present in the specific BAS20W RVG implementation.

Does BAS20W RVG have a specified reverse breakdown voltage (V_(BR))?

Yes, the BAS20W RVG specifies a minimum reverse breakdown voltage (V_(BR)) of 250 V at I_R = 100 µA, per the datasheet DS_S1405006. This value is measured under controlled DC conditions and confirms the device's ability to block up to 250 V before entering avalanche conduction. It aligns with the peak repetitive reverse voltage (V_R) rating and supports use in circuits exposed to line transients or inductive kickback up to that level. The BAS20W RVG maintains stable leakage below this threshold.

What does the "RVG" suffix mean in BAS20W RVG?

The "RVG" suffix in BAS20W RVG indicates green compound (G), RV manufacturing code (Taiwan Semiconductor's Kaohsiung fab), and SOT-323 packaging. Per ordering information in DS_S1405006, "RV" denotes the manufacturing site and control code, while "G" certifies Pb-free and RoHS-compliant green molding compound. This marking ensures traceability, environmental compliance, and process consistency-critical for automotive and industrial customers auditing supply chain materials. The BAS20W RVG marking appears laser-etched on the SOT-323 case.

How does the thermal resistance (R_θJA) of BAS20W RVG affect PCB layout?

The BAS20W RVG has an R_θJA of 200 °C/W, meaning each watt of dissipated power raises the junction temperature by 200 °C above ambient-assuming standard JEDEC 2S2P test board conditions. To maintain safe T_J, PCB layout must maximize copper area under the SOT-323 thermal pad and minimize trace length to ground planes. Without enhanced copper, continuous 200 mA operation may exceed +150 °C junction temperature at ambient >50 °C. The BAS20W RVG thermal performance is directly tied to layout execution.