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NXP Semiconductors BAS216,115

Part No.:
BAS216,115
Manufacturer:
NXP Semiconductors
Category:
Single Diodes
Package:
SOD-110
Datasheet:
AetrixBAS216,115.pdf
Description:
DIODE GEN PURP 75V 250MA SOD110
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,246

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Product details

Overview

BAS216,115 from NXP Semiconductors is a high-speed switching diode in a SOD110 ceramic SMD package, featuring 4 ns reverse recovery time, 75 V continuous reverse voltage, and 500 mA repetitive peak forward current. It serves as a fast signal-path switch in surface-mounted RF and digital logic interface circuits.

For engineers reviewing the BAS216,115 datasheet, BAS216,115 pinout, BAS216,115 application, or BAS216,115 equivalent, key selection criteria include reverse recovery speed, low junction capacitance (1.5 pF), thermal resistance (315 K/W on FR4), and compatibility with high-density automated assembly.

Technical Context

The BAS216,115 uses planar silicon technology to achieve sub-4 ns trr with minimal charge storage, enabling clean edge transitions in 10–100 MHz switching applications. Its SOD110 ceramic package provides stable electrical performance across temperature and low parasitic inductance.

Electrical behavior is characterized at Tj = 25 °C with defined test conditions: trr measured at IF = 10 mA → IR = 10 mA, RL = 100 Ω, IR sampling at 1 mA; Cd measured at f = 1 MHz, VR = 0 V.

Key Specifications

ParameterValue and Actual Design Meaning
trr4 ns maximum - enables reliable operation in >100 MHz digital signal routing and RF detector circuits
VRRM85 V peak - supports transient-tolerant signal clamping in 24 V industrial bus interfaces
VR75 V continuous - allows sustained reverse bias in DC-coupled high-speed amplifier protection paths
Cd1.5 pF typical at 0 V - minimizes signal loading in 50 Ω RF front-end switching networks
IFRM500 mA peak - handles short-duration surge currents in ESD-triggered clamp circuits
Rth j-a315 K/W on FR4 - requires thermal relief pads for sustained 250 mA operation above 50 °C ambient

Pinout & Package

SOD110 is a very small rectangular ceramic surface-mount package (1.6 × 2.1 × 1.1 mm) with cathode marking on top surface. The device has two terminals: anode and cathode, arranged in a single-row configuration.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Pin 1)Forward current entryConnected to higher-potential node during conduction; must tolerate 1.25 V forward drop at 150 mA
Cathode (Pin 2)Forward current exit / reverse blocking terminalMarked side of package; carries full reverse voltage up to 75 V DC and 85 V peak

Key Features

FeatureDesign Value
High-speed switching4 ns trr ensures minimal timing skew in clock distribution and data line steering
Ceramic SMD constructionSOD110 package delivers stable capacitance and leakage over −65 to +150 °C
Low forward voltage715 mV max at 1 mA enables low-threshold detection in battery-powered sensor wake-up circuits
Low reverse leakage30 nA max at 25 V/25 °C preserves signal integrity in high-impedance sample-and-hold nodes

Applications

RF Signal SwitchingDigital Logic Interface Protection

Use Scenario: Switching antenna paths between transceiver and diversity receiver in 2.4 GHz ISM-band modules.

IC Role / Device Role / Timing Role: High-speed RF diode switch controlling signal routing without insertion loss degradation.

Use Value: 1.5 pF capacitance and 4 ns trr maintain impedance match and minimize harmonic distortion below −40 dBc.

Use Scenario: Clamping I/O lines of microcontrollers against ESD and bus contention in industrial PLC backplanes.

IC Role / Device Role / Timing Role: Fast-acting bidirectional clamp limiting voltage excursions during hot-swap events.

Use Value: 85 V VRRM and 500 mA IFRM absorb 8 kV HBM transients while preserving logic-level thresholds.

High-Frequency DetectorDC-DC Converter Snubber

Use Scenario: Envelope detection in AM/FM demodulation stages of portable radios and wireless sensors.

IC Role / Device Role / Timing Role: Low-capacitance rectifier converting RF carrier amplitude to baseband voltage.

Use Value: Sub-1 nA leakage at 25 V ensures accurate low-level signal reconstruction down to −30 dBm input.

Use Scenario: Suppressing voltage spikes across MOSFET drains in 500 kHz synchronous buck converters.

IC Role / Device Role / Timing Role: Fast-recovery snubber diode diverting turn-off energy into RC network.

Use Value: 4 ns trr prevents reverse conduction overlap with high-side switch, reducing switching losses by ≥12%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed switching diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAV99,215Higher trr (6 ns), higher Cd (2 pF), same SOD110 package and marking code A6Marginally slower switching; less suitable for >50 MHz RF routingSelect when cost sensitivity outweighs 2 ns trr advantage and 0.5 pF Cd penalty is acceptable
1N4148W,115Plastic SOD-123 package, 4 ns trr, but higher VF (1.25 V @ 150 mA) and 4 pF CdLower thermal robustness (Rth j-a = 500 K/W); unsuitable for high-reliability RF usePrefer only for non-critical general-purpose switching where ceramic reliability is not required

Compared with BAV99,215 and 1N4148W,115, the BAS216,115 delivers superior RF performance due to its lower capacitance and ceramic thermal stability, making it the preferred choice for precision timing and high-frequency signal path integrity.

Availability

BAS216,115 is available at Aetrix Electronics and suitable for RF front-end switching, digital I/O protection, and high-frequency detector circuits requiring stable component supply across extended production lifecycles.

Supply support for BAS216,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The BAS216,115 belongs to NXP's discrete high-speed diode product line, engineered specifically for signal integrity preservation in compact, high-frequency surface-mount systems.

FAQ

What is the maximum reverse recovery time specified for BAS216,115?

The BAS216,115 has a maximum reverse recovery time (trr) of 4 ns under defined test conditions: IF = 10 mA switched to IR = 10 mA, RL = 100 Ω, with IR sampled at 1 mA. This value is confirmed in the Electrical Characteristics table of the official NXP datasheet dated 2002 May 28.

Does BAS216,115 have a cathode marking, and how is it identified on the package?

Yes, the BAS216,115 features a cathode marking on the top surface of its SOD110 ceramic package, shown as a band or stripe adjacent to Pin 2. The marking aligns with the standard SOD110 outline drawing in the NXP datasheet, and the device is marked with code "A6" for traceability.

What is the thermal resistance from junction to ambient for BAS216,115 on FR4 PCB?

The thermal resistance from junction to ambient (Rth j-a) for BAS216,115 is 315 K/W when mounted on a standard FR4 printed-circuit board, as specified in the Thermal Characteristics section of the NXP datasheet. This value assumes no additional copper pour or thermal vias.

Can BAS216,115 be used in 5 V logic-level clamping applications?

Yes, the BAS216,115 is suitable for 5 V logic-level clamping: its 75 V continuous reverse voltage and low leakage (≤30 nA at 25 V) prevent loading of high-impedance nodes, while its 4 ns trr avoids timing distortion in fast GPIO protection circuits.

What is the diode capacitance of BAS216,115 at zero bias?

The diode capacitance (Cd) of BAS216,115 is 1.5 pF maximum at f = 1 MHz and VR = 0 V, per the Electrical Characteristics table. This low value is critical for maintaining signal fidelity in RF switching and high-speed sampling applications.

BAS216,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
SOD-110
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
75 V
Current - Average Rectified (Io):
250mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
4 ns
Current - Reverse Leakage @ Vr:
1 µA @ 75 V
Capacitance @ Vr, F:
1.5pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-110
Operating Temperature - Junction:
150°C (Max)

BAS216,115 FAQ

1.How can I place an order for BAS216,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS216,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS216,115 reliable?

The price and inventory of BAS216,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS216,115 is usually 5 days.

3.What payment methods are accepted for BAS216,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS216,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS216,115?

BAS216,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS216,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS216,115?

For technical support, including BAS216,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS216,115 requirements.

6.How does Aetrix verify that BAS216,115 is sourced from the original manufacturer or authorized distributors?

All BAS216,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS216,115 meets industry standards.

7.What is the process for return or replacement of BAS216,115?

All BAS216,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAS216,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS216,115 part is unused and in its original packaging.

Return procedure for BAS216,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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