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NXP Semiconductors BAS216,135
- Part No.:
- BAS216,135
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Diodes
- Package:
- SOD-110
- Datasheet:
-
BAS216,135.pdf
- Description:
- DIODE GEN PURP 75V 250MA SOD110
- Quantity:
- Payment:
- Shipping:
Inventory:9,723
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Product details
Overview
BAS216,135 from NXP Semiconductors is a high-speed switching diode fabricated in planar technology and housed in the SOD110 ceramic SMD package. It delivers 4 ns reverse recovery time, 75 V continuous reverse voltage, and 500 mA repetitive peak forward current, enabling fast signal routing and clamping in compact surface-mounted logic and RF interface circuits.
For engineers reviewing the BAS216,135 datasheet, BAS216,135 pinout, BAS216,135 application, or BAS216,135 equivalent, key selection criteria include reverse recovery speed, low junction capacitance (1.5 pF), thermal resistance (315 K/W on FR4), and compatibility with high-frequency switching topologies requiring minimal charge storage.
Technical Context
The BAS216,135 operates as a unidirectional, single-junction silicon diode optimized for rapid turn-off via low minority-carrier lifetime design. Its 1.5 pF capacitance at 0 V and 4 ns trr are measured under standardized conditions (IF = 10 mA → IR = 10 mA, RL = 100 Ω, IR measurement at 1 mA).
Thermal performance is defined for mounting on FR4 PCBs: Rth j-a = 315 K/W and Rth j-tp = 200 K/W. Junction temperature must not exceed 150 °C, and storage temperature range spans −65 °C to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| trr | 4 ns - enables >200 MHz switching in clipping, clamping, and sampling circuits |
| Cd | 1.5 pF at 1 MHz, VR = 0 V - minimizes signal distortion in RF detector and mixer bias networks |
| VRRM | 85 V - supports transient-tolerant operation in 24–48 V industrial control signal paths |
| IFRM | 500 mA - handles pulsed logic-level current surges without degradation |
| VF @ 10 mA | 855 mV max - ensures low forward conduction loss in high-duty-cycle switching |
| IR @ 75 V | 1 µA max at 25 °C - maintains high isolation in precision analog sample-hold stages |
Pinout & Package
The BAS216,135 is supplied in the SOD110 very small ceramic rectangular surface-mounted package (1.6 × 1.1 × 0.5 mm), with cathode identified by a mark on the top surface. The device has two terminals: anode and cathode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (1) | Forward current entry | Connected to higher-potential node during conduction; requires layout clearance per FR4 thermal derating |
| Cathode (2) | Forward current exit / polarity reference | Marked side of package; ties to ground or lower-potential rail in clamp/surge protection configurations |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | 4 ns reverse recovery time enables use in >200 MHz digital and RF signal path switching |
| Low junction capacitance | 1.5 pF at zero bias reduces loading on high-impedance nodes in RF front-ends |
| Ceramic SMD package | SOD110 footprint (1.6 × 1.1 mm) supports ultra-dense layout in space-constrained IoT and portable devices |
| Thermal robustness | Rated for 150 °C junction temperature and −65 °C to +150 °C storage, suitable for extended industrial environments |
Applications
| Logic-Level Clamping | RF Detector Biasing |
|---|---|
Use Scenario: Protecting CMOS input pins from overvoltage transients in microcontroller I/O banks. IC Role / Device Role / Timing Role: Fast clamping diode shunting excess voltage to rail before logic threshold violation. Use Value: 4 ns trr and sub-1 µA leakage at 25 V ensure no timing skew or false triggering during ESD events. | Use Scenario: Providing DC bias to Schottky diode detectors in 900 MHz ISM-band receivers. IC Role / Device Role / Timing Role: Low-capacitance DC feed network element isolating RF from bias supply. Use Value: 1.5 pF capacitance prevents RF leakage into bias lines while maintaining stable DC operating point. |
| High-Speed Sampling Gate | Surge Protection Interface |
Use Scenario: Gating analog sample pulses in 10-bit, 1 MSPS data acquisition systems. IC Role / Device Role / Timing Role: Precision switch controlling analog signal path conduction window. Use Value: Consistent 4 ns trr across temperature ensures repeatable aperture time and <0.05% sampling error. | Use Scenario: Secondary-level transient suppression on RS-485 bus termination resistors. IC Role / Device Role / Timing Role: Fast-reacting clamp limiting induced spikes before they reach transceiver IC inputs. Use Value: 85 V VRRM and 1 µA IR at 75 V enable reliable hold-off during 1 kV EFT bursts without leakage-induced offset drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAS16,115 | trr = 4 ns (same), but VF = 1.25 V max @ 150 mA vs. 1.0 V for BAS216,135; Cd = 2.0 pF | Higher forward drop increases power loss in high-duty-cycle switching; slightly higher capacitance affects >1 GHz RF paths | Select BAS16,115 only if SOD123 package compatibility is required over SOD110 footprint constraints |
| 1N4148W-7-F | trr = 4 ns (same), but VRRM = 100 V, Cd = 4.0 pF, package SOD-123 | Higher reverse rating suits 48 V telecom interfaces; doubled capacitance limits use above 500 MHz | Prefer 1N4148W-7-F when higher surge margin is critical and RF frequency is below 300 MHz |
Compared with BAS16,115 and 1N4148W-7-F, the BAS216,135 offers the lowest junction capacitance (1.5 pF) in the smallest footprint (SOD110), making it optimal for miniaturized, high-frequency signal routing where board space and parasitic loading are primary constraints.
Availability
BAS216,135 is available at Aetrix Electronics and suitable for high-frequency signal routing, logic-level clamping, and RF detector biasing requiring stable component supply across production volumes and long-lifecycle programs.
Supply support for BAS216,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.
The BAS216,135 belongs to NXP's discrete high-speed diode product line, engineered specifically for compact, high-frequency signal conditioning and protection in surface-mounted digital and RF systems.
FAQ
What is the maximum reverse recovery time specified for the BAS216,135?
The BAS216,135 has a maximum reverse recovery time (trr) of 4 ns, measured under standardized conditions: switching from IF = 10 mA to IR = 10 mA with RL = 100 Ω and IR sampled at 1 mA. This value is confirmed in the NXP product data sheet dated 2002 May 28 and remains valid for all production lots of the BAS216,135.
Does the BAS216,135 have a specified forward voltage at 10 mA?
Yes, the BAS216,135 has a maximum forward voltage of 855 mV at IF = 10 mA and Tj = 25 °C, as stated in the Electrical Characteristics table of the official NXP datasheet. This parameter is critical for low-loss biasing in high-efficiency signal paths and is verified across process lots.
What package type is used for the BAS216,135?
The BAS216,135 is packaged in the SOD110 very small ceramic rectangular surface-mounted package, measuring 1.6 × 1.1 × 0.5 mm. The cathode is marked on the top surface, and the outline complies with IEC and JEDEC standards per the 97-04-14 issue date documented in the NXP datasheet.
Can the BAS216,135 be used in RF detector circuits?
Yes, the BAS216,135 is suitable for RF detector biasing due to its low 1.5 pF junction capacitance at 0 V and 4 ns trr, which minimize RF leakage and preserve detector sensitivity. Its performance is validated in typical RF front-end configurations up to 900 MHz, as supported by NXP's graphical data and application notes.
What is the thermal resistance from junction to ambient for the BAS216,135?
The thermal resistance from junction to ambient (Rth j-a) for the BAS216,135 is 315 K/W when mounted on a standard FR4 printed-circuit board, as specified in the Thermal Characteristics section of the NXP datasheet. This value assumes natural convection and defines safe power dissipation limits across ambient temperature ranges.
BAS216,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SOD-110
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 250mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 75 V
- Capacitance @ Vr, F:
- 1.5pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-110
- Operating Temperature - Junction:
- 150°C (Max)
BAS216,135 FAQ
1.How can I place an order for BAS216,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS216,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS216,135 reliable?
The price and inventory of BAS216,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS216,135 is usually 5 days.
3.What payment methods are accepted for BAS216,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS216,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS216,135?
BAS216,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS216,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS216,135?
For technical support, including BAS216,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS216,135 requirements.
6.How does Aetrix verify that BAS216,135 is sourced from the original manufacturer or authorized distributors?
All BAS216,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS216,135 meets industry standards.
7.What is the process for return or replacement of BAS216,135?
All BAS216,135 units undergo pre-shipment inspection (PSI). If there is an issue with BAS216,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS216,135 part is unused and in its original packaging.
Return procedure for BAS216,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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