Diodes Incorporated BAS21-7-F

Overview

BAS21-7-F from Diodes Incorporated is a surface-mount fast-switching silicon switching diode rated for 250 V repetitive peak reverse voltage, 400 mA forward continuous current, and 50 ns reverse recovery time, packaged in SOT23 for automated assembly in signal routing, level shifting, and clamp protection circuits.

For engineers reviewing the BAS21-7-F datasheet, BAS21-7-F pinout, BAS21-7-F application, or BAS21-7-F equivalent, key selection criteria include its 200 V DC blocking voltage, low 100 nA reverse leakage at 200 V and +25°C, 5.0 pF junction capacitance at 0 V, thermal resistance of 500 °C/W, and suitability for high-speed logic interface and transient suppression in space-constrained PCBs.

Technical Context

The BAS21-7-F operates as a single high-voltage, medium-current switching diode with a planar epitaxial construction enabling fast carrier recombination. Its 50 ns reverse recovery time supports operation up to ~10 MHz in clipping and clamping topologies.

Designed for general-purpose switching, it delivers 1.25 V max forward voltage at 200 mA and maintains stable 100 nA reverse leakage at rated VR (200 V) and room temperature-critical for low-power bias networks and precision sample-hold discharge paths.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount, 3-terminal plastic package with gull-wing leads, moisture sensitivity level 1, lead-free matte tin plating over Alloy 42 leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-switching diode applications.

Compared with BAS21-7-F, BAS21-13-F offers identical performance at higher reel density, while MMBD2102LT1G trades 50 V reverse rating for 15 ns faster recovery and lower capacitance-making it preferable only in lower-voltage, timing-critical designs.

Availability

BAS21-7-F is available at Aetrix Electronics and suitable for industrial I/O protection, medical sensor front-ends, and automotive body control modules requiring stable component supply and long-term manufacturability.

Supply support for BAS21-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAS-series fast-switching diodes are part of Diodes' general-purpose discrete portfolio, engineered for reliability in automated SMT assembly and robustness in harsh-environment signal conditioning applications.

FAQ

What is the maximum operating temperature for BAS21-7-F?

The BAS21-7-F has an operating junction temperature range of –55°C to +150°C. Its thermal resistance is 500 °C/W on standard FR-4 board layout, so derating begins above +70°C ambient-power dissipation must be reduced linearly beyond that point per the published derating curve.

Is BAS21-7-F qualified for automotive use?

No-BAS21-7-F is not AEC-Q101 qualified. For automotive applications, Diodes specifies the BAS21Q-7-F variant, which undergoes stress testing per AEC-Q101, is PPAP capable, and is manufactured in IATF 16949 certified facilities.

How does BAS21-7-F differ from BAS20-7-F?

BAS21-7-F has higher voltage ratings: 250 V V_RRM and 200 V V_RWM, versus 200 V and 150 V for BAS20-7-F. Both share identical package, pinout, thermal specs, and 50 ns t_rr, making them drop-in replacements where voltage margin permits.

Can BAS21-7-F be used in RF detector circuits?

Yes-its 5.0 pF junction capacitance and 50 ns recovery time support operation up to ~10 MHz in envelope detection and AM demodulation. However, for >30 MHz RF applications, dedicated Schottky or zero-bias diodes with sub-1 pF C_T are recommended.